LN2502LT1G

LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2502LT1G VDS= 20V 3 RDS(ON), Vgs@2.5V, Ids@5.2A = 50mΩ RDS(ON), Vgs@4.5V, Ids@6A = 40mΩ 1 2 SOT– 23 (TO–236AB) Features 3 D Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance G 1 2 S Ordering Information Device Marking Shipping LN2502LT1G N25 3000/Tape& Reel LN2502LT3G N25 10000/Tape& Reel Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 ID 6 IDM 33 TJ, Tstg -55 to 150 Continuous Drain Current Pulsed Drain Current 1) Operating Junction and Storage Temperature Range Unit V A o C Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature Apr , 2017 Rev .C 1/5 LESHAN RADIO COMPANY, LTD. LN2502LT1G Electrical Characteristics Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA Drain-Source On-State Resistance RDS(on) VGS = 2.5V, ID = 5.2A 42.0 50.0 Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID = 6A 33.0 40.0 Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V Gate Body Leakage IGSS VGS = ± 12V, VDS = 0V Forward Transconductance gfs VDS = 10V, ID = 6A 20 V 0.4 mΩ 0.9 V 1 uA ±100 nA 5 S 3) Dynamic Total Gate Charge Qg VDS = 10V, ID = 6A VGS = 4.5V 5 7 Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.5 Turn-On Delay Time td(on) 8 20 Turn-On Rise Time tr 10 20 Turn-Off Delay Time td(off) 22 45 6 15 Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDD = 10V, RG = 6Ω ID = 1A, VGS= 4.5V nC 1 ns 565 VDS = 8V, VGS = 0V f = 1.0 MHz pF 105 75 Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS VSD IS = 1.7A, VGS = 0V 1.7 A 1.2 V Note: Pulse test: pulse width