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LN2670TZHG

LN2670TZHG

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOT89-3

  • 描述:

    N沟道 漏源电压(Vdss):60V 连续漏极电流(Id):4.6A 功率(Pd):1.5W

  • 数据手册
  • 价格&库存
LN2670TZHG 数据手册
LN2670TZHG 60V N-Channel Enhancement Mode MOSFET 1 1. FEATURES 2 ● Low RDS(on) trench technology. ● Low thermal impedance. 3 SOT89 Fast switching speed. ● We declare that the material of product are Halogen Free and compliance with RoHS requirements. ● 2 Drain 2. APPLICATION ● Power Routing ● DC/DC Conversion ● Motor Drives 1 Gate 3 Source 3. ORDERING INFORMATION Device LN2670TZHG Marking 6N Shipping 1000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC unless otherwise stated) Parameter Limits Unit Drain−to−Source Voltage Symbol VDSS 60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current TA =25°C TA =70°C Pulsed Drain Current (Note 1) Avalanche Current(L=0.1mH) Avalanche energy(L=0.1mH) 1.Pulse width limited by maximum junction temperature. 4.6 ID 3.5 A IDM 18 IAS 12 A 7.2 mJ EAS A 5. THERMAL CHARACTERISTICS Symbol Limits Unit PD 1.5 W Thermal Resistance, Junction–to–Ambient(Note 2) RΘJA 85 ºC/W Thermal Resistance, Junction–to–Ambient(Note 3) RΘJA 163 ºC/W Thermal Resistance, Junction–to–Case RΘJC 35 ºC/W TJ,Tstg −55∼+150 ºC Parameter Total Device Dissipation Junction and Storage temperature 2.Surface mounted on "1.5 x 1.5" FR4 board using 1 sq in pad, 2 oz Cu. 3.Surface mounted on "30.0mm×25.0mm×1.6mm" FR4,1 oz Cu Leshan Radio Company, LTD. Rev.A Nov. 2020 1/6 LN2670TZHG 60V N-Channel Enhancement Mode MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Symbol Min. Typ. Max. Unit V(BR)DSS 60 - - V VGS(th) 1 2 3.2 V IGSS - - ±100 nA IDSS - - 1 µA RDS(on) - - 70 mΩ - - 85 Qg Qgs Qgd td(on) tr - 14.6 2 3.9 10 - td(off) tf Ciss Coss - Static Drain–Source Breakdown Voltage (VGS = 0V, ID = 250μA) Gate-Source Threshold Voltage (VDS = VGS , ID = 250 uA) Gate-Body Leakage (VDS = 0 V, VGS = ±20 V) Zero Gate Voltage Drain Current (VDS = 48 V, VGS = 0 V) Drain-Source On-Resistance(Note 4) (VGS = 10 V, ID =3 A) (VGS = 5 V, ID = 2 A) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 30 V, VGS = 10 V, ID = 3A) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VDS = 30V, ID=1A,VGS = 10V RG = 6 Ω) Input Capacitance (VDS = 30 V, VGS = 0 V, f = 1 Output Capacitance MHz) Reverse Transfer Capacitance Gate Resistance (VDS=0V ,VGS=0V, f=1.0MHz) Crss - Rg - 12 20 15 612 40 - nC ns pF 34 - 1.4 - Ω 4.Pulse test: PW ≤ 300us duty cycle ≤ 2%. Leshan Radio Company, LTD. Rev.A Nov. 2020 2/6 LN2670TZHG 60V N-Channel Enhancement Mode MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES 18 18 VGS=4V,6V,8V,10V 16 VGS=3.8V 14 14 12 12 VGS=3.6V 10 ID(A) ID(A) VDS=10V 16 8 10 25℃ 8 VGS=3.4V 6 6 4 150℃ 4 VGS=3.2V 2 -55℃ 2 VGS=3.0V 0 0 0 1 2 3 4 5 VDS(V) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS(V) ID vs. VDS ID vs. VGS 0.08 50 0.07 0.06 150℃ 0.5 25℃ RDS(on) (Ω) IS(A) 5 -55℃ VGS=5V 0.05 0.04 VGS=10V 0.03 0.05 0.02 0.005 0.01 0.3 0.4 0.5 0.6 0.7 0.8 VSD(V) 0.9 1.0 1.1 IS vs. VSD Leshan Radio Company, LTD. 1 2 3 4 5 6 7 8 9 101112131415161718 ID(A) RDS(on) vs. ID Rev.A Nov. 2020 3/6 LN2670TZHG 60V N-Channel Enhancement Mode MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.12 0.20 ID=3A 0.10 0.16 RDS(on) (Ω) RDRS(on) (Ω) 0.08 0.12 150℃ 0.08 VGS=5V,ID=2A 0.06 VGS=10V,ID=3A 0.04 25℃ 0.04 -55℃ 0.02 0.00 0.00 0 2 4 VGS(V) 6 8 10 -50 -25 0 25 50 75 Tj(℃) 100 125 150 RDS(on) vs. Tj RDS(on) vs. VGS 2.2 1200 2.1 ID=250uA 2.0 f=1.0MHz, Ta=25℃ 1000 Capacitance(pF) 1.9 VGSth(V) 1.8 1.7 1.6 1.5 800 Ciss 600 400 1.4 1.3 200 Coss 1.2 Crss 0 1.1 -50 -25 0 25 50 75 Tj(℃) 100 125 150 0 VGSth vs. Tj Leshan Radio Company, LTD. 10 20 30 VDS(V) 40 50 60 Capacitance Rev.A Nov. 2020 4/6 LN2670TZHG 60V N-Channel Enhancement Mode MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 100 10us 10 ID(A) 100us 1 100ms 1ms 10ms DC result 0.1 0.01 PCB Size: 30.0mm×25.0mm×1.6mm(FR4) 0.1 1 10 100 VDS(V) Safe Operating Area Leshan Radio Company, LTD. Rev.A Nov. 2020 5/6 LN2670TZHG 60V N-Channel Enhancement Mode MOSFET 8.OUTLINE AND DIMENSIONS 9.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.A Nov. 2020 6/6 DISCLAIMER ● Before you use our Products, you are requested to carefully read this document and fully understand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales representative.
LN2670TZHG 价格&库存

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LN2670TZHG
    •  国内价格
    • 5+0.97057
    • 50+0.79786
    • 150+0.71151
    • 1000+0.56129
    • 2000+0.50948
    • 5000+0.48357

    库存:0

    LN2670TZHG
    •  国内价格
    • 1+0.66529
    • 10+0.63888
    • 100+0.57552
    • 500+0.54384

    库存:2724