LN4501LT1G

LESHAN RADIO COMPANY, LTD. Power MOSFET 20 V, 3.2 A, Single N−Channel,SOT−23 ●APPLICATIONS 1) Load/Power Switch for Portables 2) Load/Power Switch for Computing 3) DC−DC Conversion LN4501LT1G 3 ●FEATURES 1)Leading Planar Technology for Low Gate Charge / Fast Switching 2)2.5 V Rated for Low Voltage Gate Drive 3)SOT−23 Surface Mount for Small Footprint 4) we declare that the material of product compliant with RoHS requirements and Halogen Free. 1 2 SOT– 23 (TO–236AB) 3 D ●DEVICE MARKING AND ORDERING INFORMATION G Device LN4501LT1G LN4501LT3G Marking N45 N45 Shipping 3000/Tape&Reel 10000/Tape&Reel 1 2 S ●MAXIMUM RATINGS(Ta = 25℃) Parameter Drain−to−Source Voltage Gate−to−Source Voltage TA = 25°C Continuous Drain Current (Note 1) Steady State TA = 85°C Steady State Power Dissipation (Note 1) Steady State ID Limits 20 ±12 3.2 2.4 PD 1.25 W Pulsed Drain Current (tp = 10 μs) IDM 10 A IS 1.6 A –55 to +150 °C 260 °C Continuous Source Current (Body Diode) Symbol VDSS VGS Operating and Storage Temperature Range TJ, Tstg Maximum Temperature for Soldering Purposes TL Unit V V A A (1/8” from case for 10 s) ●THERMAL CHARACTERISTICS Parameter Junction−to−Ambient (Note 1) Symbol Limits Unit RθJA 100 °C/W Junction−to−Ambient (Note 2) RθJA 300 °C/W 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size. May,2015 Rev.A 1/4 LESHAN RADIO COMPANY, LTD. LN4501LT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS Parameter Symbol Min. Drain−to−Source Breakdown Voltage (Note 3) V(BR)DSS 20 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ – Zero Gate Voltage Drain Current IDSS – Gate−to−Source Leakage Current Unit Conditions 24.5 – V 22 – mV/°C VGS = 0 V, ID = 250 μA – 1.5 μA – – 10 μA – – ±100 nA VDS = 0 V, VGS = ±12V 0.6 – 1.2 V VGS = VDS, ID = 250 μA RDS(on) gFS – – – – −2.3 70 85 9 Ciss Coss Crss QG(TOT) QGS QGD – – – – – – 200 80 50 2.4 0.5 0.6 – – – 6 – – – – – – 6.5 12 12 3 – – – – ns 0.8 7.1 5 1.9 3 1.2 V IGSS SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time td(on) Rise Time tr Turn−Off Delay Time td(off) Fall Time tf SOURCE−DRAIN DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge Max. VGS = 0 V,VDS = 16 V, TJ = 25°C VGS = 0 V,VDS = 16 V, TJ = 85°C ON CHARACTERISTICS Gate Threshold Voltage (Note 3) VGS(TH) Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate−to−Source Gate Charge Gate−to−Drain Charge Typ. VSD tRR ta tb QRR – mV/°C 80 mΩ VGS = 4.5 V, ID = 3.6 A 105 mΩ VGS = 2.5 V, ID = 3.1 A – S VDS = 5.0 V, ID = 3.6 A pF nC VGS = 0 V, f = 1.0 MHz, VDS= 10 V VGS = 4.5 V,VDS = 10 V ID = 3.6 A VGS = 4.5 V, VDS =10 V ns nC ID = 3.6 A, RG = 6.0Ω VGS = 0 V, ISD = 1.6 A VGS = 0 V, dIS/dt = 100A/μs IS = 1.6 A 3. Pulse Test: Pulse width≤300μs, duty cycle ≤2%. 4. Switching characteristics are independent of operating junction temperatures May,2015 Rev.A 2/4 LESHAN RADIO COMPANY, LTD. LN4501LT1G ELECTRICAL CHARACTERISTIC CURVES 16 20 VDS=5V 18 12 ID, Drain Current (A) ID, Drain Current (A) 14 10 8 6 4 16 14 12 10 2 8 6 4 2 0 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS, Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 2.5 VGS, Gate-to-Source Voltage (V) VGS=1.5V 0.8 0.18 0.7 0.16 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 9 101112131415 VGS=1.5V VGS=1.5V VGS=1.5V ID, Drain Current (A) VGS=2.0V VGS=2.5V VGS=2.0V VGS=2.5V VGS=2.0V VGS=2.5V FIG.3 On-Resistance versus Drain Current May,2015 VGS=2.5V FIG.2 On-Region Characteristics RDSon, On-Resistance (Ω) RDSon, On-Resistance (Ω) FIG.1 Transfer Characteristics VGS=2.0V ID=4A 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 2.0 2.2 2.4 2.6 2.8 VGS, Gate-to-Source Voltae (V) 3.0 FIG.4 On-Resistance vs. Gate-to-Source Voltage Rev.A 3/4 LESHAN RADIO COMPANY, LTD. LN4501LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 May,2015 inches mm Rev.A 4/4