LN4812LT1G

LN4812LT1G S-LN4812LT1G 30V N-Channel Enhancement-Mode MOSFET 1. FEATURES ● VDS= 30V ● RDS(ON), VGS@4.5V, IDS@5A = 52mΩ ● RDS(ON), VGS@10V, IDS@6A = 38mΩ ● We declare that the material of product compliance with SOT23(TO-236) RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. APPLICATIONS High density cell design for ultra low on-resistance Advanced trench process technology ● High power and current handling capability ● ● 3. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LN4812LT1G LN4812LT3G N48 N48 3000/Tape&Reel 10000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Drain–Source Voltage Gate–to–Source Voltage – Continuous VDSS VGS 30 ±20 V ID 6 IDM 30 Symbol Limits PD 1.4 Unit W RΘJA 90 ºC/W TJ,Tstg −55∼+150 ºC Drain Current – Continuous TA = 25°C – Pulsed(Note 1) V A 5. THERMAL CHARACTERISTICS Parameter Maximum Power Dissipation Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation. 2. 1-in²2oz Cu PCB board. Leshan Radio Company, LTD. Rev.F Mar. 2019 1/5 LN4812LT1G, S-LN4812LT1G 30V N-Channel Enhancement-Mode MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Symbol Characteristic Drain–Source Breakdown Voltage V(BR)DSS (VGS = 0, ID = 250μA) Zero Gate Voltage Drain Current IDSS (VDS=24V, VGS=0V) Gate–Body Leakage Current, Forward IGSSF (VDS = 0 V, VGS = 20 V) Gate–Body Leakage Current, Reverse IGSSR (VDS = 0 V, VGS = -20 V) Forward Transconductance gfs (VDS=5V, ID=6.9A) Min. Typ. Max. 30 - - Unit V μA - - 1 nA - - 100 nA - - -100 S - 15.4 - ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 250μA) Static Drain–Source On–State Resistance V 1.0 1.5 3.0 - 22 38 35 55 - 610 - mΩ RDS(on) (VGS = 10 V, ID = 6 A) (VGS = 4.5 V, ID = 5 A) DYNAMIC CHARACTERISTICS Input Capacitance Ciss (VGS = 0 V, f = 1.0MHz,VDS= 15 V) Output Capacitance Coss (VGS = 0 V, f = 1.0MHz,VDS= 15 V) Reverse Transfer Capacitance pF - 100 - - 77 - td(on) - 9 - Crss (VGS = 0 V, f = 1.0MHz,VDS= 15 V) pF pF SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time (VDD = 15V, RL =15Ω, ΙD = 1Α, VGEN = 10V RG = 6Ω) Fall Time tr - 14 - td(off) - 30 - tf - 5 - - - 1.3 3 ns SOURCE–DRAIN DIODE CHARACTERISTICS Forward Voltage VSD (VGS = 0 V, ISD = 1 A) Max.Diode Forward Current IS V - A 3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.F Mar. 2019 2/5 LN4812LT1G, S-LN4812LT1G 30V N-Channel Enhancement-Mode MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES 5 5 VGS=3.0V 4.5 4 4 ID,Drain Current(A) VGS=3.5V, 4V ID,Drain Current(A) VDS=6V 4.5 3.5 3 2.5 VGS=2.5V 2 3.5 150℃ 3 2.5 2 1.5 1.5 1 1 0.5 0.5 25℃ -55℃ VGS=2.0V 0 0 0 1 2 3 4 VDS，Drain to Source Voltage(V) 5 0 ID vs. VDS 1 2 VGS,Gate to Source Voltage(V) 3 ID vs. VGS 0.06 10 1 150℃ 25℃ -55℃ 0.1 RDSon On Resistance(Ω) IS,Diode Forward Current(A) 0.05 VGS=4V 0.04 VGS=4.5V 0.03 0.02 VGS=10V 0.01 0 0.01 0.3 0.5 0.7 0.9 VSD,Diode Forward Voltage(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 ID,Drain Current(A) IS vs. VSD Leshan Radio Company, LTD. RDS(on) vs. ID Rev.F Mar. 2019 3/5 LN4812LT1G, S-LN4812LT1G 30V N-Channel Enhancement-Mode MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES（Con.） 0.20 0.06 ID=5.0A VGS=4.5V,ID=5.0A 0.15 RDSon On Resistance(Ω) RDSon On Resistance(Ω) 0.05 25℃ 0.10 150℃ 0.05 0.04 0.03 VGS=10V,ID=6.0A 0.02 0.01 -55℃ 0.00 0 2 4 6 8 VGS,Gate to Source Voltage(V) 10 -50 -25 0 25 50 75 100 125 150 Tj,Temperature(℃) RDS(on) vs. Tj RDS(on) vs. VGS 1.8 700 1.7 f=1.0MHz Ta=25℃ ID=250uA 500 1.5 Capacitance(pF) VGSTH Threshold Voltage(V) 600 1.6 1.4 1.3 1.2 1.1 Ciss 400 300 200 1 Coss 100 0.9 Crss 0 0.8 -50 -25 0 25 50 75 100 Tj,Temperature(℃) 125 150 0 30 Capacitance VGSTH vs. Tj Leshan Radio Company, LTD. 10 20 VDS,Drain to Source Voltage(V) Rev.F Mar. 2019 4/5 LN4812LT1G, S-LN4812LT1G 30V N-Channel Enhancement-Mode MOSFET 8.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 9.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.F Mar. 2019 5/5