LN8544DT1AG

LN8544DT1AG N-Channel 30-V (D-S) MOSFET 1. FEATURES ● Low Gate Charge ● High Current Capability We declare that the material of product are Halogen Free and compliance with RoHS requirements. ● 2. APPLICATION ● DC/DC Converters in Computing, Servers, and POL ● Isolated DC/DC Converters in Telecom and Industrial 3. ORDERING INFORMATION Device Marking Shipping LN8544DT1AG 854 3000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC unless otherwise stated) Drain−to−Source Voltage Symbol VDSS Limits 30 Unit V Gate−to−Source Voltage VGS ±20 V IAS 31 A EAS 48 mJ Parameter Avalanche Current Avalanche energy L=0.1mH TC =25°C Continuous Drain Current(Note 1) TC =70°C TA =25°C 47 ID IDM TC =25°C Maximum Power Dissipation(Note 1) TC =70°C TA =25°C 16 64 A 20 PD 13 2.5 W 1.6 TA =70°C TJ −55 ~+150 Storage Temperature Range Tstg −55 ~+150 Thermal Resistance-Junction to Ambient(Note 1) RθJA 50 Thermal Resistance-Junction to Case(Note 1) RθJC 6 Operating Junction Temperature A 13 TA =70°C Pulsed Drain Current 38 ºC ºC/W 1.The device mounted on 1in ²FR4 board with 2 oz copper Leshan Radio Company, LTD. Rev.G Mar. 2022 1/5 LN8544DT1AG N-Channel 30-V (D-S) MOSFET 5. ELECTRICAL CHARACTERISTICS Characteristic Symbol Min. Typ. Max. Unit V(BR)DSS 30 - - V VGS(th) 1 - 2.1 V IGSS - - ±100 nA IDSS - - 1 μA RDS(on) - 3.7 5.6 mΩ - 5.4 7.6 VSD - 0.7 1.2 Qg - 54 - Static Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) Gate Threshold Voltage (VDS = VGS , ID = 250 μA) Gate Leakage Current (VDS = 0 V, VGS = ±20 V) Zero Gate Voltage Drain Current (VDS = 30 V, VGS =0V) Drain-Source On-Resistance(Note 2) (VGS = 10 V, ID = 20 A) (VGS = 4.5 V, ID = 16 A) Diode Forward Voltage (IS = 1.0 A, VGS = 0 V) Dynamic Total Gate Charge (VDS = 15 V, VGS = 10 V, ID = 20 A) Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 15 V, VGS = 4.5 V, ID = 20 A) Input Capacitance (VDS = 15 V, VGS Output Capacitance = 0 V,F= 1MHz) Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VDD = 15 V, RL = 15 Ω,VGEN = 10 V, RG = 3 Ω) Qg - 27 - Qgs - 9.5 - Qgd - 11 - Ciss - 2450 - Coss - 393 - Crss td(on) - 129 23 tr - 16 - td(off) - 73 - tf - 12 - V nC pF ns 2.Pulse test: pulse width≤300us, duty cycle≤2%, Guaranteed by design, not subject to production testing. Leshan Radio Company, LTD. Rev.G Mar. 2022 2/5 LN8544DT1AG N-Channel 30-V (D-S) MOSFET 6. ELECTRICAL CHARACTERISTICS CURVES 25 15 VGS=3V,3.5V,4V VDS=10V 20 ID,Drain Current(A) ID,Drain Current(A) 12 VGS=2.8V 9 6 VGS=2.6V 25℃ 15 10 150℃ -55℃ 5 3 VGS=2.4V 0 0 0 1 2 3 VDS,Drain to Source voltage(V) 0.0 4 1.0 2.0 3.0 VGS,Gate to Source Voltage(V) ID vs. VGS ID vs. VDS 7 100 10 1 150℃ 25℃ RDS(on) (mΩ) IS Diode Forward Current(A) 6 -55℃ VGS=4.5V 5 4 VGS=10V 3 2 0.1 1 0.01 0 0.2 0.4 0.6 0.8 1.0 VSD,Diode Forward Current(V) 12 14 16 18 ID,Drain Current(A) 20 RDS(on) vs. ID IS vs. VSD Leshan Radio Company, LTD. 10 Rev.G Mar. 2022 3/5 LN8544DT1AG N-Channel 30-V (D-S) MOSFET 6. ELECTRICAL CHARACTERISTICS CURVES(Con.) 35 10 RDS(on) On Resistance (mΩ) RDS(On) ON Resistance (mΩ) ID=20A 30 25 20 15 10 150℃ 25℃ 5 8 VGS=4.5V,ID=16A 6 4 VGS=10V,ID=20A 2 -55℃ 0 0 2 4 6 8 VGS,Gate to Source Voltage(V) 10 -50 -25 0 RDS(on) vs. VGS RDS(on) vs. Tj 4000 2.0 ID=250uA f=1.0MHz Ta=25℃ 3500 1.8 3000 Ciss 1.6 Capacitance(pF) VGSTH Threshod Voltage (V) 25 50 75 100 125 150 Tj,Temperature(℃) 1.4 1.2 2500 2000 1500 1000 1.0 Coss 500 Crss 0.8 0 -50 -25 0 25 50 75 100 125 150 0 Tj,Temperature(℃) 20 30 VDS,Drain to Source Voltage(V) Capacitance VGSTH vs. Tj Leshan Radio Company, LTD. 10 Rev.G Mar. 2022 4/5 LN8544DT1AG N-Channel 30-V (D-S) MOSFET 7.OUTLINE AND DIMENSIONS D1 D e L Dim A E1 A1 b b1 b2 D E D1 E1 e L L1 L2 A3 L1 b b1 L2 E C0.2 b2 BOTTOM VIEW A A1 A3 TOP VIEW DFN3030-8B Min Nor 0.60 0.65 0.00 0.03 0.30 0.35 0.40 0.45 0.50 0.55 2.95 3.00 2.95 3.00 2.45 2.50 1.45 1.50 0.65BSC Max 0.70 0.05 0.40 0.50 0.60 3.05 3.05 2.55 1.55 0.45 0.44 0.57 0.55 0.50 0.49 0.54 0.62 0.67 0.152REF. All Dimensions in mm SIDE VIEW 8.SOLDERING FOOTPRINT X3 Y2 Y1 DFN3030-8B C C Y C1 X X1 Leshan Radio Company, LTD. X2 X1 Dim C C1 X X1 X2 X3 Y1 Y2 Y Rev.G Mar. 2022 (mm) 0.65 0.70 0.60 0.40 0.50 2.80 2.20 3.20 0.82 5/5 DISCLAIMER ● Curve guarantee in the specification. The curve of test items with electric parameter is used as quality guarantee. The curve of test items without electric parameter is used as reference only. ● Before you use our Products for new Project, you are requested to carefully read this document and fully under-stand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales represe-ntative.