LNA2306LT1G

LNA2306LT1G S-LNA2306LT1G 30V N-Channel Enhancement-Mode MOSFET 1. FEATURES ● VDS= 30V ● RDS(ON), VGS@10V, IDS@5.8A = 38mΩ ● RDS(ON), VGS@4.5V, IDS@5.0A = 43mΩ ● RDS(ON), VGS@2.5V, IDS@4.0A = 62mΩ ● We declare that the material of product compliance with SOT23E RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. APPLICATIONS ● ● Advanced trench process technology High density cell design for ultra low on-resistance 3. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping A06 A06 3000/Tape&Reel 10000/Tape&Reel LNA2306LT1G LNA2306LT3G 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Drain–Source Voltage Gate–to–Source Voltage – Continuous VDSS VGS 30 ±12 V ID 5.8 IDM 30 Symbol Limits Unit PD 1.4 W RΘJA 140 ºC/W TJ,Tstg −55∼+150 ºC Drain Current – Continuous TA = 25°C – Pulsed(Note 1) V A 5. THERMAL CHARACTERISTICS Parameter Maximum Power Dissipation Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation. 2. 1-in²2oz Cu PCB board. Leshan Radio Company, LTD. Rev.C Mar. 2020 1/5 LNA2306LT1G, S-LNA2306LT1G 30V N-Channel Enhancement-Mode MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Symbol Min. Typ. Max. Unit V(BR)DSS 30 - - V IDSS - - 1 μA IGSSF - - 100 nA IGSSR - - -100 nA gfs 10 15 - S VGS(th) 0.7 - 1.4 V RDS(on) - 31 38 mΩ (VGS = 4.5 V, ID =5 A) - 34 43 (VGS = 2.5 V, ID = 4 A) - 45 62 Ciss - 496 - pF Coss - 50 - pF Crss - 42 - pF td(on) - 5 tr - - ns td(off) - 5 72 tf - 28 - VSD - - 1.2 Characteristic Drain–Source Breakdown Voltage (VGS = 0, ID = 250μA) Zero Gate Voltage Drain Current (VDS=24V, VGS=0V) Gate–Body Leakage Current, Forward (VDS = 0 V, VGS = 8 V) Gate–Body Leakage Current, Reverse (VDS = 0 V, VGS = -8 V) Forward Transconductance (VDS = 5.0 V, ID = 5 A) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (VDS = VGS, ID = 250μA) Static Drain–Source On–State Resistance (VGS = 10 V, ID =5.8 A) DYNAMIC CHARACTERISTICS Input Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 15 V) Output Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 15 V) Reverse Transfer Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 15 V) SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time (VDD = 15V, RL = 2.55Ω ΙD = 1Α, VGEN = 10V,RG = 3.1Ω) Fall Time SOURCE–DRAIN DIODE CHARACTERISTICS Forward Voltage (VGS = 0 V, IF = 1 A) V 3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.C Mar. 2020 2/5 LNA2306LT1G, S-LNA2306LT1G 30V N-Channel Enhancement-Mode MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES 25 20 VDS=6V 18 VGS=2.5V 20 ID,Drain Current(A) ID,Drain Current(A) 16 14 12 10 150℃ 8 15 VGS=2V 10 6 25℃ 4 2 5 -55℃ VGS=1.5V 0 0 0 0.5 1 1.5 2 VGS,Gate-to-Source Voltage(V) 2.5 0 6 ON-Region Characteristics Transfer Characteristics 1.4 0.7 1.2 0.6 RDS(on),On-Resistance(Ω) VGS(th)(Normallized) 2 4 VDS,Drain-to-Source Voltage(V) 1 0.8 0.6 0.4 0.5 VGS=2V 0.4 0.3 0.2 0.1 0.2 VGS=2.5V 0 0 -55 -5 45 95 T,temperature(℃) 145 0 VGS(th) vs. Temperature Leshan Radio Company, LTD. 5 10 15 ID,Drain Current(A) 20 RDS(on) vs. ID Rev.C Mar. 2020 3/5 LNA2306LT1G, S-LNA2306LT1G 30V N-Channel Enhancement-Mode MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES（Con.） 0.10 0.09 RDS(on),On-Resistance(Ω) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 VGS,Gate-to -Source Voltage (V) 3 RDS(on) vs. VGS Leshan Radio Company, LTD. Rev.C Mar. 2020 4/5 LNA2306LT1G, S-LNA2306LT1G 30V N-Channel Enhancement-Mode MOSFET 8.OUTLINE AND DIMENSIONS SOT23E HE A1 Ɵ c A R0 .1 5 L L1 8° e E b SOT23E DIM MIN NOR MAX A 0.90 1.00 1.10 A1 0.01 0.06 0.10 b 0.30 0.40 0.50 c 0.10 0.15 0.20 D 2.80 2.90 3.00 E 1.20 1.30 1.40 e 1.80 1.90 2.00 L 0.20 0.40 0.60 L1 0.45 0.55 0.65 H E 2.20 2.40 2.60 θ 0º – 10º All Dimensions in mm D GENERAL NOTES 1.Top package surface finish Ra0.4±0.2um 2.Bottom package surface finish Ra0.7±0.2um 3.Side package surface finish Ra0.4±0.2um 9.SOLDERING FOOTPRINT B SOT23E DIM (mm) X 0.80 Y 0.90 A 2.00 B 0.95 C 0.95 Y A C X Leshan Radio Company, LTD. Rev.C Mar. 2020 5/5