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LNTK3043NT5G

LNTK3043NT5G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOT-723-3

  • 描述:

    MOS管 N-Channel VDS=20V VGS=±10V ID=255mA RDS(ON)=1.6Ω@4.5V SOT723

  • 数据手册
  • 价格&库存
LNTK3043NT5G 数据手册
LNTK3043NT5G S-LNTK3043NT5G 20 V, 285 mA, N−Channel Power MOSFET SOT-723 1. FEATURES ● Enables High Density PCB Manufacturing ● 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89 ● Low Voltage Drive Makes this Device Ideal for Portable Equipment ● Low Threshold Levels, VGS(TH) < 1.3 V ● Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Drain 3 Environments such as Portable Electronics ● Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels Using the Same Basic Topology ● These are Pb−Free Devices ● We declare that the material of product compliance with 1 RoHS requirements and Halogen Free. ● Gate 2 Source S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LNTK3043NT5G KA 8000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation(Note 1) Steady State TA = 25°C t ≤5 s TA = 25°C Steady State TA = 25°C TA = 85°C Symbol Limits VDSS 20 Unit V VGS ±10 V 255 ID Power Dissipation(Note 2) Steady State PD 440 mW 545 TA = 25°C TA = 85°C TA = 25°C Pulsed Drain Current(tp = 10 µs) Source Current (Body Diode) (Note 2) Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8 " from case for 10 s) Leshan Radio Company, LTD. mA 285 t ≤5 s Continuous Drain Current (Note 2) 185 ID 210 mA PD 155 310 mW IDM 400 mA IS 286 mA TJ,Tstg −55∼+150 ºC TL 260 ºC Rev.B Oct. 2021 1/5 LNTK3043NT5G, S-LNTK3043NT5G 20 V, 285 mA, N−Channel Power MOSFET 4. THERMAL CHARACTERISTICS Parameter Symbol Limits 280 Unit RΘJA 228 ºC/W Steady State(Note 1) Thermal Resistance-Junction to Ambient t = 5 s(Note 1) 400 Steady State(Note 2) 1.Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2.Surface−mounted on FR4 board using the minimum recommended pad size. 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Symbol Min. Typ. Max. Unit VBRDSS 20 - - V VBRDSS/TJ - 27 - mV/ºC IDSS - - 1 μA - - 10 IGSS - - ±1 μA VGS(th) 0.4 - 1.3 V VGS(TH)/TJ - -2.4 - mV/ºC (VGS = 4.5V, ID = 10 mA) - 1.5 3.4 (VGS = 4.5V, ID = 255 mA) - 1.6 3.8 - 2.4 4.5 (VGS = 1.8 V, ID = 1 mA) - 5.1 10 (VGS = 1.65 V, ID = 1 mA) DYNAMIC - 6.8 15 Ciss - 55 - Coss - 11.5 - Static Drain–Source Breakdown Voltage (VGS = 0, ID = 100μA) Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current (VGS = 0, VDS = 16 V,TJ = 25°C) (VGS = 0, VDS = 16 V,TJ = 125°C) Gate–Body Leakage Current (VDS = 0 V, VGS = ±5 V) Gate Threshold Voltage (VDS = VGS, ID = 250μA) Gate Threshold Temperature Coefficient Static Drain–Source On–State Resistance RDS(on) (VGS = 2.5 V, ID = 1 mA) Input Capacitance Output Capacitance Reverse Transfer Capacitance (VGS=0 V, f=1 MHz, VDS=10 V) Turn-On Delay Time Rise Time Turn-Off Delay Time (VGS = 4.5 V, VDD = 5 V, ID = 10 mA,RG = 6Ω) Fall Time Diode Forward Voltage TJ = 25°C (VGS = 0 V, IS = 286 mA) TJ = 125°C Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge (VGS=0 V,VDD =20 V, dISD/dt=100 A/ µs,IS=286 mA) Crss - 7 - td(on) - 4.8 - tr - 2.4 - td(off) - 32 - tf - 69 - - 0.83 1.2 - 0.69 - tRR - 9.1 - ta - 7.1 - tb - 2.0 - QRR - 3.7 - VSD Ω pF ns V ns nC 3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. 4.Switching characteristics are independent of operating junction temperatures Leshan Radio Company, LTD. Rev.B Oct. 2021 2/5 LNTK3043NT5G, S-LNTK3043NT5G 20 V, 285 mA, N−Channel Power MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES 0.30 0.30 VGS=1.6V,1.8V,10V VDS=5V 0.25 0.25 VGS=1.5V 0.20 -55℃ 0.20 ID(A) ID(A) 25℃ VGS=1.4V 0.15 0.10 0.15 125℃ 0.10 VGS=1.3V 150℃ 0.05 0.05 VGS=1.2V VGS=1.1V 0.00 0.00 0 1 2 3 4 5 0.0 0.2 0.4 0.6 VDS(V) 0.8 1.0 VGS(V) 1.2 1.4 1.6 ID vs. VGS ID vs. VDS 0.9 1 0.8 150℃ 0.1 0.7 VGS=1.8V 25℃ 0.01 RDS(on) (Ω) IS(A) 125℃ -55℃ 0.6 0.5 VGS=2.5V 0.4 VGS=4.5V 0.3 0.001 0.2 0.0001 0.1 0.3 0.5 VSD(V) 0.7 0.9 0.1 0.00 0.20 0.30 ID(A) IS vs. VSD Leshan Radio Company, LTD. 0.10 RDS(on) vs. ID Rev.B Oct. 2021 3/5 LNTK3043NT5G, S-LNTK3043NT5G 20 V, 285 mA, N−Channel Power MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 20 0.50 ID=0.255A 0.45 10 RDS(on) (Ω) RDS(on) (Ω) 15 -55℃,25℃,125℃,150℃ 0.40 VGS=4.5V,ID=10mA 0.35 VGS=4.5V,ID=255mA 0.30 5 0.25 0 0.20 0 2 4 6 8 10 -50 -25 0 25 VGS(V) 100 125 150 RDS(on) vs. Tj RDS(on) vs. VGS 1.0 100 ID=250uA 90 0.9 f=1.0MHz Ta=25℃ 80 Capacitance(pF) 70 VGSth(V) 50 75 Tj(℃) 0.8 0.7 Ciss 60 50 40 30 0.6 Coss 20 10 0.5 Crss 0 -50 -25 0 25 50 75 100 125 150 0 Tj(℃) 10 15 20 VDS(V) VGSth vs. Tj Leshan Radio Company, LTD. 5 Capacitance Rev.B Oct. 2021 4/5 LNTK3043NT5G, S-LNTK3043NT5G 20 V, 285 mA, N−Channel Power MOSFET 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.45 NOM MAX MIN NOM MAX 0.50 0.55 0.018 0.020 0.039 b 0.15 0.21 0.27 0.006 0.008 0.011 b1 0.25 0.31 0.37 0.010 0.012 0.015 C 0.07 0.12 0.17 0.003 0.005 0.007 D 1.15 1.20 1.25 0.045 0.047 0.049 E 0.75 0.80 0.85 0.030 0.031 0.033 e HE 0.40REF 1.15 L L2 0.15 1.20 0.016REF 1.25 0.045 0.047 0.049 0.25 0.006 0.008 0.010 0.29REF 0.20 0.011REF 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.B Oct. 2021 5/5 DISCLAIMER ● Curve guarantee in the specification. The curve of test items with electric parameter is used as quality guarantee. The curve of test items without electric parameter is used as reference only. ● Before you use our Products for new Project, you are requested to carefully read this document and fully under-stand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales represe-ntative.
LNTK3043NT5G 价格&库存

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LNTK3043NT5G
  •  国内价格
  • 1+0.13300
  • 30+0.12825
  • 100+0.12350
  • 500+0.11400
  • 1000+0.10925
  • 2000+0.10640

库存:6680

LNTK3043NT5G
    •  国内价格
    • 20+0.23051
    • 200+0.18521
    • 600+0.16005
    • 2000+0.14495
    • 8000+0.11878

    库存:0