LP0404N3T5G

LP0404N3T5G 20V, P-Channel (D-S) MOSFET 1. FEATURES ● VDS = -20V RDS(ON)≤0.48Ω,VGS@-4.5V,IDS@-780mA RDS(ON)≤0.67Ω,VGS@-2.5V,IDS@-660mA RDS(ON)≤0.95Ω,VGS@-1.8V,IDS@-100mA RDS(ON)≤2.2Ω,VGS@-1.5V,IDS@-100mA ● Super high density cell design for extremely low RDS(ON). ● Exceptional on-resistance and maximum DC current capability. ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. APPLICATIONS Power Management in Note book Portable Equipment ● Battery Powered System ● ● 3. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LP0404N3T5G T5 10000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter Drain−to−Source Voltage Unit VDSS Limits -20 VGS ±6 V Symbol Gate−to−Source Voltage Drain Current (Note 1) ID Steady State -1.4 V A Note 1: Surface Mounted on 1” x 1” FR4 Board. Leshan Radio Company, LTD. Rev.O Sep 2016 1/5 LP0404N3T5G 20V, P-Channel (D-S) MOSFET 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Symbol Min. Typ. Max. Unit V(BR)DSS -20 - - V VGS(th) -0.4 - -1.2 V IGSS - - ±10 µA IDSS - - -1 µA - - 0.48 - - 0.67 Static Drain-Source Breakdown Voltage (VGS = 0V, ID =-250uA) Gate Threshold Voltage (VDS =VGS , ID =-250μA ) Gate Leakage Current (VDS =0V, VGS =±4.5V ) Zero Gate Voltage Drain Current (VDS =-16V, VGS =0V ) Drain-Source On-Resistance (VGS=-4.5V,ID=-780mA) Drain-Source On-Resistance (VGS=-2.5V,ID=-660mA) - - 0.95 - - 2.2 VSD - - -1.2 Qg - 2.8 - (VGS=-1.8V,ID=-100mA) Drain-Source On-Resistance (VGS=-1.5V,ID=-100mA) Diode Forward Voltage (IS =-350mA, VGS =0V) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance (VDS =-16V, VGS =-4.5V, ID =-200mA) (VDD =-10V, RL =50Ω,VGEN =5V,RG =10Ω,ID =-200mA) (VDS = -16 V, VGS = 0 V, f = 1 MHz) Reverse Transfer Capacitance Note 2: Pulse test; pulse width ≤ 300µs, duty cycle≤ 2%. Leshan Radio Company, LTD. Ω RDS(ON) Drain-Source On-Resistance Qgs - 2.1 - Qgd - 0.5 - td(on) - 51.3 - tr - 24.2 - td(off) - 246 - tf - 81.2 - Ciss - 152 - Coss - 18.5 - Crss - 6 - Rev.O Sep 2016 V nC ns pF 2/5 LP0404N3T5G 20V, P-Channel (D-S) MOSFET 6.ELRCTRICAL CHARACTERISTICS CURVES On Resistance vs. Junction Temperature On Resistance vs. Drain Current Capacitance On Resistance vs. Gate to Source Volatge Leshan Radio Company, LTD. Rev.O Sep 2016 3/5 LP0404N3T5G 20V, P-Channel (D-S) MOSFET 6.ELRCTRICAL CHARACTERISTICS CURVES(Con.) Threshold Voltage On-Region Characteristics Gate Charge Body-diode Characteristics Leshan Radio Company, LTD. Rev.O Sep 2016 4/5 LP0404N3T5G 20V, P-Channel (D-S) MOSFET 7.OUTLINE AND DIMENSIONS DIM D SOT883 MIN TYP MAX 1.05 1.00 0.95 E 0.65 0.60 0.50 e - 0.64 - e1 - 0.34 - L 0.19 0.24 0.29 L1 0.22 0.27 0.32 b 0.10 0.15 0.20 b1 0.44 0.49 0.54 A 0.43 0.48 0.53 A1 0 - 0.05 All Dimensions in mm 8.SOLDERING FOOTPRINT Dimensions c X X1 X2 Y Y1 Leshan Radio Company, LTD. Rev.O Sep 2016 (mm) 0.70 1.10 0.40 0.40 0.20 0.55 5/5