LP1480WT1G

LP1480WT1G S-LP1480WT1G -20V P-Channel Power Mosfet 1. FEATURES ● V(BR)DSS=-20V RDS(ON) ≤210mΩ @VGS =-4.5V,ID=-1.0A RDS(ON) ≤310mΩ @VGS =-2.5V,ID=-0.5A ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● SC70(SOT-323) S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC 3. DEVICE MARKING AND RESISTOR VALUES Device Marking Shipping LP1480WT1G W14 3000/Tape&Reel S-LP1480WT1G W14 3000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter Drain-Source voltage Gate-Source Voltage Continuous Drain Current Steady-State Symbol Limits Unit VDS -20 Vdc VGS ±8 Vdc ID @t≤5s Pulse Drain Current @Tp=10µs IDM -1.4 -1.5 A -3.0 5. THERMAL CHARACTERISTICS Parameter Power Dissipation Symbol Limits Unit 0.29 W PD FR−4 Board (Note 1) @ TA = 25ºC @ TA = 70ºC Thermal Resistance, 0.19 RΘJA 430 ºC/W RΘJL 100 ºC/W TJ,Tstg −55∼+150 ºC Junction–to–Ambient(Note 1) Junction to Lead Junction and Storage temperature 1. FR–4 @ Minimum Pad. Leshan Radio Company, LTD. Rev.O Aug 2016 1/3 LP1480WT1G, S-LP1480WT1G -20V P-Channel Power Mosfet 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Symbol Characteristic Drain-Source Voltage V(BR)DSS (ID =-250µA, VGS =0V) Zero Gate Voltage Drain Current IDSS (VDS = -16V, VGS =0V) Gate-body Leakage Current IGSS (VDS =0V, VGS =±8V) Min. Typ. Max. -20 - - Unit V µA - - -1 nA - - ±100 -0.4 -0.6 -1.0 V - 110 210 - 150 310 mΩ - 190 370 4 6 - ON CHARACTERISTICS Gate Threshold Voltage VGS(th) (VDS =VGS , ID =-250µA) Static Drain-Source On resistance (VGS = -4.5V,ID= -1.0A ) RDS(ON) (VGS = -2.5V,ID= -0.5A ) (VGS = -1.8V,ID= -0.3A ) Dynamic Transconductance gFS (VDS = -10V, ID = -1A ) Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = -10V, VGS =0V, f=1MHz) Gate Resistance Ciss - 480 - Coss - 58 - Crss - 51 - - 12 - Qg - 6.5 - Qgs - 0.3 - Rg (VDS =0V, VGS =0V, f=1MHz ) S pF Ω Switching Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time (VGS = -4.5V, ID = -1.2A, VDS = -10V) (VGS = -4.5V, VDS = -10V, ID = -1.2A, RGEN =6Ω) Qgd - 0.7 - tD(on) - 8 - tr - 6 - tD(off) - 42 - tf - 7 - - -0.79 -1.5 - - -1 - 30 - - 12 - nC ns Source Drain Diode Diode Forward Voltage (IS = -1A, VGS =0V) Maximum Body-diode Continuous Current Body-diode Reverse Recovery Time (Is = -1.0A, di/dt=100A/µs) Body-diode Reverse Recovery Charge (Is = -1.0A, di/dt=100A/µs) Leshan Radio Company, LTD. VSD Is trr Qrr Rev.O Aug 2016 V A ns nC 2/3 LP1480WT1G, S-LP1480WT1G -20V P-Channel Power Mosfet 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. INCHES MILLIMETERS DIM MIN A A1 A2 b c D E e e1 L HE 0.80 0.00 NOM MAX 0.90 1.00 0.05 0.10 0.70REF 0.30 0.35 0.40 0.10 0.18 0.25 1.80 2.10 2.20 1.15 1.24 1.35 1.20 1.30 1.40 0.65REF 0.20 0.38 0.56 2.00 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 NOM MAX 0.035 0.039 0.002 0.004 0.028REF 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 0.026REF 0.015 0.022 0.083 0.095 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.O Aug 2016 3/3