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LP1485WT1G

LP1485WT1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOD323

  • 描述:

    -20V P沟道功率Mosfet

  • 数据手册
  • 价格&库存
LP1485WT1G 数据手册
LP1485WT1G S-LP1485WT1G -20V P-Channel Power Mosfet 1. FEATURES ● V(BR)DSS=-20V RDS(ON) ≤250mΩ @VGS =-1.8 V,ID=-1.0A RDS(ON) ≤140mΩ @VGS =-4.5V,ID=-1.0A ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● SC70(SOT-323) S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. (3) 2. APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC (1) (2) 3. DEVICE MARKING AND RESISTOR VALUES Device Marking Shipping LP1485WT1G W15 3000/Tape&Reel S-LP1485WT1G W15 3000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter Drain-Source voltage Gate-Source Voltage Continuous Drain Current Steady-State Symbol Limits Unit VDS -20 Vdc VGS ±8 Vdc ID @t≤5s Pulse Drain Current @Tp=10µs IDM -1.4 -1.5 A -3.0 5. THERMAL CHARACTERISTICS Parameter Symbol Limits Unit PD 0.29 W Power Dissipation FR−4 Board (Note 1) @ TA = 25ºC 0.19 @ TA = 70ºC Thermal Resistance, Junction–to–Ambient(Note 1) Junction and Storage temperature RΘJA 430 ºC/W TJ,Tstg −55∼+150 ºC 1.1-in2 2oz Cu PCB board. Leshan Radio Company, LTD. Rev.C Dec. 2020 1/5 LP1485WT1G, S-LP1485WT1G -20V P-Channel Power Mosfet 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Static Drain-Source Voltage (ID =-250µA, VGS =0V) Zero Gate Voltage Drain Current (VDS = -16V, VGS =0V) Gate-body Leakage Current (VDS =0V, VGS =±8V) Gate Threshold Voltage (VDS =VGS , ID =-250µA) Symbol Min. Typ. Max. Unit V(BR)DSS -20 - - V IDSS - - -1 µA IGSS - - ±100 nA VGS(th) -0.4 -0.6 -1.0 V 180 250 mΩ 130 110 170 140 Static Drain-Source On resistance (VGS = -1.8V,ID= -1A ) RDS(ON) (VGS = -2.5V,ID= -1A ) (VGS = -4.5V,ID= -1A ) Diode Forward Voltage (IS = -1A, VGS =0V) VSD - -0.79 -1.5 V Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time (VDS = -10V, VGS =0V, f=1MHz) (VGS = -4.5V, ID = -1.2A, VDS = -10V) (VGS = -4.5V, VDS = -10V, ID = -1.2A, RGEN =6Ω) Gate Resistance (VDS =0V, VGS =0V, f=1MHz ) Maximum Body-diode Continuous Current Body-diode Reverse Recovery Time (Is = -1.0A, di/dt=100A/µs) Body-diode Reverse Recovery Charge (Is = -1.0A, di/dt=100A/µs) Leshan Radio Company, LTD. Ciss - 400 - Coss - 41 - Crss - - Qg - 30 4 Qgs - 0.6 - pF nC Qgd - 0.85 - td(on) - 5 - tr - 11 - td(off) - 30 - tf - 18 - Rg - 12 - Ω IS - - -1 A trr - 30 - ns Qrr - 12 - nC Rev.C Dec. 2020 ns 2/5 LP1485WT1G, S-LP1485WT1G -20V P-Channel Power Mosfet 7.ELECTRICAL CHARACTERISTICS CURVES 1.5 1.5 VGS=1.4V,1.5V,2V,2.5V,3V VDS=10V 25℃ 1.2 1.2 VGS=1.3V 0.9 -55℃ ID(A) ID(A) 0.9 VGS=1.2V 0.6 0.6 150℃ VGS=1.1V 0.3 0.3 VGS=1.0V 0.0 0.0 0 1 2 3 4 0.0 5 0.5 1.0 VGS(V) VDS(V) ID vs. VGS ID vs. VDS 0.16 10 0.14 0.1 150℃ 25℃ RDS(on) (Ω) IS(A) VGS=2.5V 0.12 1 -55℃ 0.10 VGS=4.5V 0.08 0.06 0.04 0.01 0.02 0.00 0.001 0.2 0.4 0.6 VSD(V) 0.8 1.0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 ID(A) IS vs. VSD Leshan Radio Company, LTD. RDS(on) vs. ID Rev.C Dec. 2020 3/5 LP1485WT1G, S-LP1485WT1G -20V P-Channel Power Mosfet 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.25 0.18 ID=1.0A 0.16 VGS=2.5V,ID=1.0A 0.14 RDS(on) (Ω) RDS(on) (Ω) 0.20 150℃ 0.15 25℃ 0.10 0.12 0.10 VGS=4.5V,ID=1.0A 0.08 0.06 -55℃ 0.05 0.04 0.02 0.00 0.00 0 1 2 3 VGS(V) 4 5 -50 -25 0 50 75 Tj(℃) 100 125 150 RDS(on) vs. Tj RDS(on) vs. VGS 700 1.0 0.9 ID=250uA f=1.0MHz Ta=25℃ 600 0.8 500 Capacitance(pF) VGSth(V) 25 0.7 0.6 0.5 Ciss 400 300 200 0.4 0.3 100 0.2 0 Coss Crss -50 -25 0 25 50 75 Tj(℃) 100 125 150 0 VGSth vs. Tj Leshan Radio Company, LTD. 5 10 VDS(V) 15 20 Capacitance Rev.C Dec. 2020 4/5 LP1485WT1G, S-LP1485WT1G -20V P-Channel Power Mosfet 8.OUTLINE AND DIMENSIONS SC70 DIM MIN NOR MAX A 0.80 0.95 1.00 A1 0.00 0.05 0.7 REF 0.10 0.30 0.35 0.40 A2 b c 0.10 0.15 0.25 D 1.80 2.05 2.20 E 1.15 1.30 1.35 e 1.20 1.30 1.40 e1 0.65 BSC L 0.20 0.35 0.56 He 2.00 2.10 2.40 ALL Dimension in mm 9 . SOLDERING FOOTPRINT SC70 Leshan Radio Company, LTD. Rev.C Dec. 2020 DIM MIN A 1.90 B 0.65 C 0.65 X 0.70 Y 0.90 5/5 DISCLAIMER ● Before you use our Products, you are requested to carefully read this document and fully understand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales representative.
LP1485WT1G 价格&库存

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LP1485WT1G
    •  国内价格
    • 1+0.23100
    • 30+0.22275
    • 100+0.21450
    • 500+0.19800
    • 1000+0.18975
    • 2000+0.18480

    库存:3000