LP2301ALT1G

LP2301ALT1G S-LP2301ALT1G 20V P-Channel Enhancement-Mode MOSFET 1. FEATURES ● VDS =-20V ● RDS(ON),VGS@-2.5V,IDS@-2.0A=150mΩ ● RDS(ON),VGS@-4.5V,IDS@-2.8A=110mΩ ● We declare that the material of product compliance with SOT23(TO-236) RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. APPLICATIONS Power management in note book Portable equipment ● Battery powered system ● Load switch ● DSC ● ● 3. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LP2301ALT1G 01A 3000/Tape&Reel LP2301ALT3G 01A 10000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter Drain–Source Voltage Gate–to–Source Voltage – Continuous Symbol Limits Unit VDSS -20 V VGS ±8 V Drain Current(Note 1) – Continuous TA = 25°C – Pulsed A ID -2 IDM -10 Symbol Limits 5. THERMAL CHARACTERISTICS Parameter Maximum Power Dissipation Thermal Resistance, Unit PD 0.7 W RΘJA 175 ºC/W TJ,Tstg −55∼+150 ºC Junction–to–Ambient(Note 1) Junction and Storage temperature 1. The device mounted on 1in²FR5 board with 2 oz copper. Leshan Radio Company, LTD. Rev.D Jun. 2019 1/5 LP2301ALT1G, S-LP2301ALT1G 20V P-Channel Enhancement-Mode MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Symbol Drain–Source Breakdown Voltage VBRDSS (VGS = 0, ID = -250μA) Zero Gate Voltage Drain Current IDSS (VGS = 0, VDS = -20 V) Gate–Body Leakage Current, Forward IGSSF (VGS = 8 V) Gate–Body Leakage Current, Reverse IGSSR (VGS = - 8 V) Min. Typ. Max. -20 - - Unit V μA - - -1 nA - - 100 nA - - -100 -0.4 -0.6 - ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = -250μA) Static Drain–Source On–State Resistance V mΩ RDS(on) (VGS = -4.5 V, ID = -2.8 A) 90 (VGS = -2.5 V, ID = -2 A) - 110 110 150 DYNAMIC CHARACTERISTICS Input Capacitance Ciss (VGS = 0 V, f = 1.0MHz,VDS= -15 V) Output Capacitance Coss (VGS = 0 V, f = 1.0MHz,VDS= -15 V) Reverse Transfer Capacitance Crss (VGS = 0 V, f = 1.0MHz,VDS= -15 V) pF - 480 - - 46 - pF pF - 10 - td(on) - 50 - tr - 30 - td(off) - 40 - tf - 11 - SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time (VDS=-6V, RL =6Ω, RGEN=6Ω,VGS=-4.5V ) Fall Time ns SOURCE–DRAIN DIODE CHARACTERISTICS VSD Forward Voltage (VGS = 0 V, ISD = -1 A) V - -0.7 -1.4 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.D Jun. 2019 2/5 LP2301ALT1G, S-LP2301ALT1G 20V P-Channel Enhancement-Mode MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES 4 4 VGS=2.5V,3.5V,4V 3.5 VDS=10V 3.5 VGS=1.5V 3 3 2.5 2.5 VGS=1.4V ID(A) ID(A) 25℃ 2 2 150℃ VGS=1.3V 1.5 1 -55℃ 1.5 1 VGS=1.2V 0.5 0.5 0 0 0 1 2 3 VDS(V) 4 5 0 0.5 1 1.5 VGS(V) ID vs. VGS ID vs. VDS 0.20 5 0.18 0.16 25℃ 0.14 IS(A) RDS(on) (Ω) 0.5 150℃ -55℃ 0.12 VGS=2.5V 0.10 0.08 VGS=4.5V 0.05 0.06 0.04 0.02 0.005 0.00 0 0.2 Leshan Radio Company, LTD. 0.4 0.6 0.8 1 1.2 1 2 3 VSD(V) ID(A) IS vs. VSD RDS(on) vs. ID Rev.D Jun. 2019 4 3/5 LP2301ALT1G, S-LP2301ALT1G 20V P-Channel Enhancement-Mode MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.50 0.20 ID=2.8A 0.18 0.40 0.16 0.35 0.14 RDS(on) (Ω) RDS(on) (Ω) 0.45 0.30 25℃ 0.25 0.20 VGS=2.5V,ID=2.0A 0.12 0.10 0.08 VGS=4.5V,ID=2.8A 150℃ 0.15 0.06 0.10 0.04 0.05 0.02 -55℃ 0.00 0.00 0 1 2 VGS(V) 3 4 5 -50 -25 0 50 Tj(℃) 75 100 125 150 RDS(on) vs. Tj RDS(on) vs. VGS 700 0.8 ID=250uA Capacitance (pF) 0.6 0.5 f=1.0MHz Ta=25℃ 600 0.7 VGSTH (V) 25 500 Ciss 400 300 0.4 200 0.3 100 Coss Crss 0.2 0 -50 -25 0 25 50 75 Tj(℃) 100 125 150 5 10 VDS(V) 15 20 Capacitance VGSTH vs. Tj Leshan Radio Company, LTD. 0 Rev.D Jun. 2019 4/5 LP2301ALT1G, S-LP2301ALT1G 20V P-Channel Enhancement-Mode MOSFET 8.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 9.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.D Jun. 2019 5/5