LP2301ELT1G

LP2301ELT1G S-LP2301ELT1G 20V P-Channel Enhancement-Mode MOSFET 1. FEATURES ● VDS =-20V ● RDS(ON),VGS@-2.5V,IDS@-2.0A≤156mΩ ● RDS(ON),VGS@-4.5V,IDS@-2.8A≤110mΩ ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring SOT23(TO-236) unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ● Advanced trench process technology ● High density cell design for ultra low on-resistance ● Fully characterized avalanche voltage and current ● improved shoot-through FOM ESD protected,ESD > 1kV HBM 2. APPLICATIONS Simple drive requirement Small package outline ● Surface mount device ● ● 3. DEVICE MARKING AND ORDERING INFORMATION Device LP2301ELT1G LP2301ELT3G Marking Shipping YES YES 3000/Tape&Reel 10000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter Drain–Source Voltage Gate–to–Source Voltage – Continuous Drain Current – Continuous TA = 25°C – Pulsed(Note 1) Symbol VDSS Limits -20 Unit VGS ±8 V ID -2.8 IDM -11 Symbol Limits 0.9 V A 5. THERMAL CHARACTERISTICS Parameter Maximum Power Dissipation Thermal Resistance, PD RΘJA Unit 140 W ºC/W −55∼+150 ºC Junction–to–Ambient(Note 2) Junction and Storage temperature TJ,Tstg 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation. 2. 1-in²2oz Cu PCB board. Leshan Radio Company, LTD. Rev.D Apr. 2021 1/5 LP2301ELT1G, S-LP2301ELT1G 20V P-Channel Enhancement-Mode MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic STATIC Drain–Source Breakdown Voltage (VGS = 0, ID = -250μA) Zero Gate Voltage Drain Current (VGS = 0, VDS = -9.6 V) Gate–Body Leakage Current, Forward (VGS = ±8 V) Gate Threshold Voltage (VDS = VGS, ID = -250μA) Symbol Min. Typ. Max. Unit VBRDSS -20 - - V IDSS - - -1 μA IGSS - - ±10 μA VGS(th) -0.4 -0.65 -0.9 V RDS(on) - 90 - 110 110 156 Static Drain–Source On–State Resistance (VGS = -4.5 V, ID = -2.8 A) (VGS = -2.5 V, ID = -2 A) DYNAMIC mΩ Total Gate Charge Qg(-10V) - 7.8 - (VDS = -10V,VGS = -10V, ID = -1.6A) Gate-Source Charge Qg(-4.5V) - - Qgs Qgd - 3.5 0.5 - 1.2 - Ciss - 520 - pF Coss - 55 - pF Crss - 17 - pF td(on) - 1350 - tr - - td(off) tf - 830 5500 - 1550 - VSD - -0.8 -1.2 Total Gate Charge Gate-Drain Charge Input Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -6 V) Output Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -6 V) Reverse Transfer Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -6 V) Turn-On Delay Time (VDD = -6V, RL = 6Ω Rise Time ΙD = −1Α, VGEN = -4.5V Turn-Off Delay Time RG = 6Ω) Fall Time Forward Voltage (VGS = 0 V, ISD = -0.75 A) Leshan Radio Company, LTD. Rev.D Apr. 2021 - nC ns - V 2/5 LP2301ELT1G, S-LP2301ELT1G 20V P-Channel Enhancement-Mode MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES 3.0 3.0 VGS=2V,2.5V,3V VDS=10V VGS=1.5V 2.5 2.0 ID Drain Current(A) ID Drain Current(A) 2.5 VGS=1.4V 1.5 VGS=1.3V 25℃ 2.0 1.5 -55℃ 150℃ 1.0 1.0 VGS=1.2V 0.5 0.5 VGS=1.1V 0.0 0.0 0 3 1 2 4 VDS Drain To Source Voltage(V) 0.0 5 0.5 1.0 1.5 VGS Gate to Source Voltage(V) ID vs. VGS ID vs. VDS 0.12 5 RDS(on) On Resistance (Ω) IS Diode Forward Current(A) 0.10 0.5 150℃ 25℃ -55℃ 0.05 VGS=2.5V 0.08 VGS=4.5V 0.06 0.04 0.02 0.005 0.00 0.2 0.4 0.6 0.8 1.0 VSD Diode Forward Voltage(V) Jun, 2012-Ver1.1 1.0 1.5 2.0 2.5 ID Drain Current(A) 3.0 RDS(on) vs. ID IS vs. VSD Leshan Radio Company, LTD. 0.5 Rev.D Apr. 2021 3/5 03 LP2301ELT1G, S-LP2301ELT1G 20V P-Channel Enhancement-Mode MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.4 0.16 ID=2.8A RDS(on) On Resistance (Ω) RDS(on) On Resistance (Ω) 0.14 0.3 25℃ 0.2 150℃ 0.1 0.12 VGS=2.5V,ID=2.0A 0.10 0.08 VGS=4.5V,ID=2.8A 0.06 -55℃ 0.0 0.04 1 2 3 4 VGS Gate to Source Voltage(V) 5 -50 RDS(on) vs. VGS -25 0 25 50 75 100 125 150 Tj Temperature(℃) RDS(on) vs. Tj 0.8 VGSTH Threshold Voltage (V) ID=250uA 0.7 0.6 0.5 0.4 0.3 0.2 -50 -25 0 25 50 75 Tj Temperature(℃) 100 125 150 VGSTH vs. Tj Leshan Radio Company, LTD. Jun, 2012-Ver1.1 Rev.D Apr. 2021 4/5 LP2301ELT1G, S-LP2301ELT1G 20V P-Channel Enhancement-Mode MOSFET 8.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 9.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.D Apr. 2021 5/5 DISCLAIMER ● Before you use our Products, you are requested to carefully read this document and fully understand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales representative.