LP2301LT1G

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET ●FEATURES 1) VDS =-20V 2) RDS(ON),Vgs@-2.5V,Ids@-2.0A=150mΩ 3) RDS(ON),Vgs@-4.5V,Ids@-2.8A=100mΩ 4) Advanced trench process technology 5) High Density Cell Design For Ultra Low On-Resistance 6) Fully Characterized Avalanche Voltage and Current 7) Improved Shoot-Through FOM 8) Simple Drive Requirement 9) Small Package Outline 10) Surface Mount Device 11) We declare that the material of product compliant with RoHS requirements and Halogen Free . LP2301LT1G 3 1 2 SOT– 23 3 G Pulsed Drain Current Operating and Storage Temperature Range Thermal Resistance-Junction to Ambient(Note1) IDM Limits -20 ±8 -2.3 0.9 0.57 Unit V V A -8 A TJ, Tstg –55 to +150 RθJA 175 1 2 ●DEVICE MARKING AND ORDERING INFORMATION Shipping Device Marking 3000/Tape&Reel LP2301LT1G 01 10000/Tape&Reel LP2301LT3G 01 ●MAXIMUM RATINGS(Ta = 25℃) Parameter Symbol Drain−to−Source Voltage VDSS Gate−to−Source Voltage VGS ID Continuous DrainCurrent TA = 25°C PD Maximum Power Dissipation TA = 75°C D S W °C °C/W 2 1.The device mounted on 1in FR4 board with 2 oz copper June,2015 Rev.A 1/5 LESHAN RADIO COMPANY, LTD. LP2301LT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) Parameter Symbol Min. Static Drain−to−Source Breakdown Voltage V(BR)DSS -20 Typ. Max. Unit – – V VGS(TH) -0.4 – 0.9 V IDSS – – -1 μA IGSS – – ±100 nA – 69 100 Drain−to−Source On Resistance (Note2) RDS(on) mΩ – 83 150 mΩ Forward Transconductance gfs – 6.5 – S Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss – – – – – – – – – – 15.23 5.49 2.74 17.28 3.73 36.05 6.19 882.5 145.5 97.26 – – – – – – – – – – IS – – -2.4 A VSD – -0.8 -1.2 V Gate Threshold Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current DYNAMIC Total Gate Charge Gate−to−Source Gate Charge Gate−to−Drain Charge Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance SOURCE-DRAIN DIODE Max. Diode Forward Current Forward Diode Voltage nC ns pF Conditions VGS = 0 V, ID = -250 μA VGS = VDS, ID = -250 μA VDS=-9.6V, VGS=0V VDS = 0 V, VGS = ±8 V VGS = -4.5 V, ID =-2.8 A VGS = -2.5 V, ID = -2 A VDS = -5 V, ID = -4 A VGS =-4.5 V, VDS = -6 V ID = -2.8 A VDS=-6V, RL =6 Ω RGEN=6 Ω, VGS=4.5V VGS = 0 V, f = 1.0 MHz, VDS= -6 V VGS = 0 V, IS = -0.75A 2. Pulse Test: Pulse width≤300μs, duty cycle ≤2%. June,2015 Rev.A 2/5 LESHAN RADIO COMPANY, LTD. LP2301LT1G ELECTRICAL CHARACTERISTIC CURVES 18 20 VDS=5V 16 18 16 14 14 12 10 ID (A) ID (A) 12 8 10 8 6 6 4 4 2 2 0 0 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2.5 VDS (V) VGS=2.0V VGS (V) VGS=1.5V FIG.2 On-Region Characteristics 0.50 0.50 0.45 0.45 0.40 0.40 0.35 0.35 RDSon (ohm) RDSon (ohm) FIG.1 Transfer Characteristics VGS=2.5V 0.30 0.25 0.20 0.30 0.25 0.20 0.15 0.15 0.10 0.10 0.05 0.05 0.00 0.00 0 1 2 3 4 5 6 7 ID (A) VGS=1.5V 0 1 2 3 4 5 6 7 8 VGS (V) VGS=2.0V FIG. . 3 On-Resistance versus Drain Current June,2015 8 FIG.4 On-Resistance vs. Gate-to-Source Voltage Rev.A 3/5 LESHAN RADIO COMPANY, LTD. LP2301LT1G ELECTRICAL CHARACTERISTIC CURVES 1000 0.12 900 0.10 700 RDSon (ohm) Capacitance (pF) 800 600 500 400 300 200 0.08 0.06 0.04 0.02 100 0.00 0 0 2 4 6 Coss 0 25 50 75 100 125 150 Temp (℃) VDS (V) Ciss -50 -25 Crss FIG.6 Capacitance FIG.7 On-Resistance vs. Junction Temperature -0.2 -0.3 VGSth (V) -0.4 -0.5 -0.6 -0.7 -0.8 -50 -25 0 25 50 75 100 125 150 Temp (℃) FIG.8 Vth vs. Junction Temperature June,2015 Rev.A 4/5 LESHAN RADIO COMPANY, LTD. LP2301LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 June,2015 inches mm Rev.A 5/5