LP2305LT1G

LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1) Advanced trench process technology 2) High Density Cell Design For Ultra Low On-Resistance LP2305LT1G 3) We declare that the material of product are Halogen Free and compliance with RoHS requirements. 3 1 2 ●FEATURES 1) VDS= -30V 2) RDS(ON), Vgs@-10V, Ids@-4.2A = 70m Ω 3) RDS(ON), Vgs@-4.5V, Ids@-4.0A = 85 m Ω 4) RDS(ON), Vgs@-2.5V, Ids@-1.0A = 130m Ω SOT– 23 (TO–236AB) 3 G 1 ●DEVICE MARKING AND ORDERING INFORMATION Device LP2305LT1G LP2305LT3G Marking P05 P05 2 Shipping 3000/Tape&Reel 10000/Tape&Reel D S ●MAXIMUM RATINGS(Ta = 25℃) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Total Power Dissipation Operating and Storage Temperature Range Thermal Resistance-Junction to Ambient(Note2) Symbol Limits Unit VDSS -30 V VGS ±12 V -4.2 A ID IDM -30 A PD W 1.4 TJ, Tstg –55 to +150 °C RθJA 140 °C/W 1. Repetitive Rating: Pulse width limited by the Maximum junction temperationr 2. 1-in2 2oz Cu PCB board May,2015 Rev.C 1/4 LESHAN RADIO COMPANY, LTD. LP2305LT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) STATIC Parameter Symbol Min. Drain−to−Source Breakdown Voltage V(BR)DSS -30 VGS(TH) Gate Threshold Voltage -0.7 IDSS Zero Gate Voltage Drain Current – IGSS Gate−to−Source Leakage Current – – Drain−to−Source On RDS(on) – Resistance(Note3) – Forward Diode Voltage VSD Forward Transconductance gFS 7 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate−to−Source Gate Charge Gate−to−Drain Charge Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Ciss Coss Crss QG QGS QGD td(on) tr td(off) tf – – – – – – – – – – Typ. – – – – 53 64 86 – 11 826.18 90.74 53.18 6.36 1.79 1.42 11.36 2.32 34.88 3.52 Max. Unit Conditions – V VGS = 0 V, ID = -250 μA -1.3 V VGS = VDS, ID =- 250 μA -1 μA VDS=-24V, VGS=0V ±100 nA VDS = 0 V, VGS = ±12 V 70 m Ω VGS = -10V, ID =-4.2 A 85 m Ω VGS = -4.5 V, ID =-4 A 130 m Ω VGS = -2.5 V, ID = -1 A -1 V VGS = 0 V, ISD = -1A – S VDS = -5.0 V, ID = -5 A – – – – – – – – – – pF VGS = 0 V, f = 1.0 MHz, VDS= -15 V nC VGS =-15 V,VDS = -4.5V ID = -4A ns VDD = -15V, RL =3.6 Ω ΙD = −1Α, VGEN = -10V RG = 6 Ω 3. Pulse Test: Pulse width≤300μs, duty cycle ≤2%. May,2015 Rev.C 2/4 LESHAN RADIO COMPANY, LTD. LP2305LT1G ELECTRICAL CHARACTERISTIC CURVES 3 VDS=5V ID, Drain Current (A) ID, Drain Current (A) 2.5 2 1.5 1 0.5 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 0 0 0.5 1 1.5 2 VGS, Gate-to-Source Voltage (V) 2.5 0.2 0.4 0.6 0.8 VDS, Drain-to-Source Voltage (V) VGS=1.6V FIG.1 Transfer Characteristics VGS=2.1V VGS=2.6V FIG.2 On-Region Characteristics 1.0 RDSon , On Resistance (Ω) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 0.5 SN1 VGS=1.6V 1.0 1.5 2.0 2.5 ID, Drain Current (A) SN1 VGS=2.1V 3.0 SN1 VGS=2.6V FIG.3 On-Resistance Versus Drain Current May,2015 Rev.C 3/4 1 LESHAN RADIO COMPANY, LTD. LP2305LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 May,2015 inches mm Rev.C 4/4