LP2307LT1G

LESHAN RADIO COMPANY, LTD. 16V P-Channel Enhancement-Mode MOSFET LP2307LT1G S-LP2307LT1G VDS= -16V RDS(ON), Vgs@-4.5V, Ids@-4.7A = 70 mΩ RDS(ON), Vgs@-2.5V, Ids@-1.0A = 110 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance 2 S- Prefix for Automotive and Other Applications Requiring SOT– 23 (TO–236AB) Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ▼ Simple Drive Requirement D ▼ Small Package Outline ▼ Surface Mount Device G 1 2 S Ordering Information Device Marking Shipping LP2307LT1G S-LP2307LT1G P07 3000/Tape&Reel LP2307LT3G S-LP2307LT3G P07 10000/Tape&Reel Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units -16 V ±8 V 3 -4.7 A 3 -3.3 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current -20 A PD@TA=25℃ Total Power Dissipation 1.1 W PD@T A=70℃ Total Power Dissipation 0.7 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Unit 110 ℃/W Rev .O 1/4 LESHAN RADIO COMPANY, LTD. LP2307LT1G , S-LP2307LT1G Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -16 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-4.7A - 48 70 mΩ VGS=-2.7V, ID=-3.8A - 63 100 mΩ VGS=-2.5V, ID=-1.0A - 65 110 mΩ VDS=VGS, ID=-250uA -0.6 -0.85 -1.4 V VDS=-10V, ID =-4.7A - 8 VGS(th) Gate Threshold Voltage gfs Forward Transconductance - S - -1 uA - - ±100 nA ID=-4.7A - 24 36 nC IDSS Drain-Source Leakage Current (Tj=25 C) VDS=-16V, VGS=0V - IGSS Gate-Source Leakage VGS=±8V, VDS =0V o 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-10V - 18 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 2.7 - nC VDS=-10V - 22 35 ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 35 55 ns td(off) Turn-off Delay Time RG=6Ω ,VGS=-4.5V - 45 70 ns tf Fall Time RD=10Ω - 25 ns Ciss Input Capacitance VGS=0V - 985 40 1580 pF Coss Output Capacitance VDS=-15V - 180 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 160 - pF Min. Typ. Source-Drain Diode Symbol Parameter IS Max Diode Forward Current VSD Diode Forward Voltage Test Conditions IS=-1.7A, VGS=0V Max. Units -1.7 A -1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width