LP2309LT1G

LP2309LT1G P-Channel 60V (D-S) MOSFET 1. FEATURES ● RDS(ON)≤215mΩ , Vgs@-10V. ● RDS(ON)≤260mΩ , Vgs@-4.5V. ● Super high density cell design for extremely low RDS(ON). ● Exceptional on-resistance and maximum DC current capability. ● We declare that the material of product compliance with SOT23(TO-236) RoHS requirements and Halogen Free. 2. APPLICATIONS Power Management in Note book Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC ● LCD Display inverter ● ● 3. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LP2309LT1G P09 3000/Tape&Reel LP2309LT3G P09 10000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter Drain–Source Voltage Gate–to–Source Voltage – Continuous Continuous Drain Current Ta=25℃ Ta=70℃ Pulsed Drain Current Maximum Power Dissipation Unit VDSS Limits -60 VGS ±20 V Symbol ID IDM Ta=25℃ Ta=70℃ Junction Temperature Storage Temperature Range PD V -1.9 -1.5 A -7.6 1.4 W 0.9 ℃ Tj 150 Tstg -55~+150 Thermal Resistance-Junction to Ambient(Note 1) RθJA Thermal Resistance-Junction to Case(Note 1) RθJC t≤10s Steady State ℃ 170 225 ℃/W 90 1.The device mounted on 1in ²FR4 board with 2 oz copper Leshan Radio Company, LTD. Rev.F May. 2020 1/6 LP2309LT1G P-Channel 60V (D-S) MOSFET 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Symbol Min. Typ. Max. Unit VBRDSS -60 - - V VGS(th) -1 - -3 V IGSS - - ±100 nA IDSS - - -10 μA RDS(on) - 170 215 mΩ - 200 260 VSD - - -1.2 Qg - 4.06 - Qgs - 1.04 - Qgd - 2.1 - Ciss - 373 - Coss - 24.2 - Crss - 17.4 - td(on) - 3.6 - tr - 3.6 16.7 - - 2.9 - - 6.5 - STATIC Drain–Source Breakdown Voltage (VGS = 0, ID = -250μA) Gate Threshold Voltage (VDS = VGS, ID = -250μA) Gate Leakage Current (VDS =0V, VGS =±20V) Zero Gate Voltage Drain Current (VGS = 0V, VDS = -60 V) Static Drain–Source On–State Resistance (VGS = -10 V, ID = -1.8 A) (VGS = -4.5 V, ID = -1.4 A) Forward Voltage (VGS = 0 V, IS = -1.2 A) DYNAMIC Total Gate Charge (VGS = -4.5 V, ID =-1A,VDS= -48 V) Gate-Source Charge (VGS = -4.5 V, ID =-1A,VDS= -48 V) Gate-Drain Charge (VGS = -4.5 V, ID =-1A,VDS= -48 V) Input Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -30 V) Output Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -30 V) Reverse Transfer Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -30 V) Turn-On Delay Time Rise Time Turn-Off Delay Time (VDS = -30V, RL= 30 ID = -1A, VGS = -10V RG = 3.1Ω) Fall Time Gate-Resistance (VGS = 0 V, VDS=0V,f=1MHz) td(off) tf Rg V nC pF ns Ω 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.F May. 2020 2/6 LP2309LT1G P-Channel 60V (D-S) MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES 2 2 VGS=4V,5V Ta=25℃ 1.8 VGS=3V 1.6 1.4 1.2 VGS=2.8V 1 25℃ 1.6 ID,Drain Current(A) ID,Drain Current(A) 1.8 0.8 1.4 1.2 150℃ 1 0.8 0.6 0.6 VGS=2.6V 0.4 0.4 0.2 0.2 0 0 0 1 2 3 4 VDS,Drain to Source Voltage(V) 0 5 1 2 3 VGS,Gate to Source Voltage(V) ID vs. VGS ID vs. VDS 0.25 10 VGS=4.5V 0.2 1 RDS(on) (Ω) IS,Diode Forward Current(A) -55℃ 0.1 150℃ 25℃ -55℃ VGS=10V 0.15 0.1 0.01 0.05 Ta=25℃ 0 0.001 0.2 0.4 0.6 0.8 VSD,Diode forward Voltage(V) 1 1 IS vs. VSD Leshan Radio Company, LTD. 1.2 1.4 1.6 ID,Drain Current(A) 1.8 2 RDS(on) vs. ID Rev.F May. 2020 3/6 LP2309LT1G P-Channel 60V (D-S) MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.4 1 ID=1.0A 0.9 0.35 0.8 VGS=4.5V,ID=1.4A 0.7 RDS(on) (Ω) RDS(on) (Ω) 0.3 0.6 0.5 0.4 0.25 0.2 VGS=10V,ID=1.8A 0.15 150℃ 0.3 0.1 25℃ 0.2 0.05 0.1 -55℃ 0 0 2 4 6 8 VGS,Gate to Source Voltage(V) -50 10 -25 RDS(on) vs. VGS 0 25 50 75 100 125 150 Tj,Temperature(℃) RDS(on) vs. Tj 500 2.4 ID=250uA f=1.0MHz Ta=25℃ 450 2.2 400 350 Capacitance(pF) VGSTH(V) 2 Ciss 1.8 1.6 300 250 200 150 1.4 100 Coss 1.2 50 Crss 0 1 -50 -25 0 25 50 75 Tj,Tempature(℃) 100 125 150 0 40 60 VDS(V) VGSTH vs. Tj Leshan Radio Company, LTD. 20 Capacitance Rev.F May. 2020 4/6 LP2309LT1G P-Channel 60V (D-S) MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 10 1µs 1 10µs ID(A) 100µs 100ms DC result 1ms 10ms 0.1 PCB Size: 30.0mm×25.0mm×1.6mm(FR4) 0.01 0.1 1 10 100 VDS(V) Safe Operating Area Leshan Radio Company, LTD. Rev.F May. 2020 5/6 LP2309LT1G P-Channel 60V (D-S) MOSFET 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.F May. 2020 6/6