LP3218DT1G
12V P-Channel Enhancement MOSFET
1. FEATURES
●
Low Profile DFN 2.0x2.0x0.62 mm for Board Space Saving
Ultra Low RDS(on)
● ESD Diode.Protected Gate
●
●
This is a Pb-Free Device
●
We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
2.APPLICATIONS
●
Battery Switch
●
High Side Load Switch
3. ORDERING INFORMATION
Device
Marking
Shipping
32
4000/Tape&Reel
LP3218DT1G
4. MAXIMUM RATINGS(Ta = 25ºC unless otherwise stated)
Parameter
Drain−to−Source Voltage
Symbol
VDSS
Limits
12
Unit
V
Gate−to−Source Voltage
VGS
±8
V
Drain Current (Note 1)Steady State
ID
8.2
A
Pulsed Drain Current (tp = 10 µs)
IDM
25
A
PD
1.7
W
Power Dissipation (Note 1)
Steady State
3.8
t
很抱歉,暂时无法提供与“LP3218DT1G”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 1+0.52058
- 30+0.50173
- 100+0.48287
- 500+0.44517
- 1000+0.42631
- 2000+0.41500