LP3407ELT1G

LP3407ELT1G 30V P-Channel Enhancement-Mode MOSFET 1. FEATURES ● VDS = -30V. ● We declare that the material of product compliance with SOT23(TO-236AB) RoHS requirements and Halogen Free. ● ESD Protected. 3 Drain 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking LP3407ELT1G PE7 Shipping 3000/Tape&Reel 1 Gate 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Drain–Source Voltage Gate–to–Source Voltage – Continuous Drain Current – Continuous TA = 25°C – Pulsed(Note 1) 2 Source Symbol VDSS Limits -30 Unit VGS ±20 V V A ID -3 IDM -12 Symbol Limits 1.1 4. THERMAL CHARACTERISTICS Parameter Maximum Power Dissipation Thermal Resistance, PD RΘJA Unit 110 W ºC/W −55∼+150 ºC Junction–to–Ambient(Note 2) Junction and Storage temperature TJ,Tstg 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation. 2. 1-in²2oz Cu PCB board. Leshan Radio Company, LTD. Rev.A Mar. 2022 1/6 LP3407ELT1G 30V P-Channel Enhancement-Mode MOSFET 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Symbol Min. Typ. Max. Unit VBRDSS -30 - - V IDSS - - -1 μA IGSS - - ±10 μA VGS(th) -1 -1.5 -2.5 V RDS(on) - 47 66 70 90 mΩ VSD - - -1.5 V Ciss - 350 - Coss - 56 - Crss - 38 - Qg(10V) Qg(4.5V) - 7 3.6 1 1.8 - STATIC Drain–Source Breakdown Voltage (VGS = 0 V, ID = -250 μA) Zero Gate Voltage Drain Current (VGS = 0 V, VDS = -30 V) Gate Leakage Current (VDS = 0 V, VGS = ±20 V) Gate Threshold Voltage (VDS = VGS, ID = -250 μA) Static Drain–Source On–State Resistance (VGS = -10 V, ID = -2 A) (VGS = -4.5 V, ID = -1.5 A) Forward Voltage (VGS = 0 V, IS = -1 A) Dynamic Input Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -15 V) Output Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -15 V) Reverse Transfer Capacitance (VGS = 0 V, f = 1.0MHz,VDS= -15 V) Total Gate Charge Total Gate Charge Gate-Source Charge (VDS = -15 V, ID = -2 A) Qgs Qgd Gate-Drain Charge - - td(on) - tr td(off) - 10 26 120 - Rise Time tf - 81 - Turn-Off Delay Time Fall Time Leshan Radio Company, LTD. Rev.A Mar. 2022 nC - Turn-On Delay Time (VDS = -15V, RL= 3.6 Ω,VGS = -10V,RG = 3.1Ω) pF - ns - 2/6 LP3407ELT1G 30V P-Channel Enhancement-Mode MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES VGS=3.5V,4V,4.5V,5V,6V,7V,8V,9V,10V 6.0 6 5.5 VGS=3.0V 5.0 5 4.5 4 4.0 3.5 ID(A) ID(A) VGS=2.8V 3 3.0 2.5 VGS=2.6V 2 -55℃ 25℃ 2.0 1.5 VGS=2.4V 1 150℃ 1.0 VGS=2.2V 0.5 0 0.0 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 VGS(V) VDS(V) 2.5 3.0 ID vs. VGS ID vs. VDS 0.12 10 0.10 0.08 IS(A) RDS(on) (Ω) 1 150℃ 25℃ -55℃ VGS=4.5V 0.06 VGS=10V 0.04 0.1 0.02 0.00 0.01 0.2 0.4 0.6 VSD(V) 0.8 1.0 1 3 4 5 6 ID(A) IS vs. VSD Leshan Radio Company, LTD. 2 RDS(on) vs. ID Rev.A Mar. 2022 3/6 LP3407ELT1G 30V P-Channel Enhancement-Mode MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.14 0.20 0.12 ID=2.0A 0.16 RDS(on) (Ω) RDS(on) (Ω) 0.10 0.12 150℃ 0.08 0.08 VGS=4.5A,ID=12A 0.06 VGS=10V,ID=2.0A 25℃ 0.04 -55℃ 0.04 0.02 0.00 0.00 0 2 4 6 8 10 -50 -25 0 25 VGS(V) RDS(on) vs. VGS 50 75 Tj(℃) RDS(on) vs. Tj 500 1.8 ID=250uA f=1.0MHz, Ta=25℃ Ciss 400 Capacitance(pF) 1.6 VGSth(V) 100 125 150 1.4 300 200 1.2 Coss 100 Crss 0 1.0 -50 -25 0 25 50 75 Tj(℃) 100 125 150 0 VGSth vs. Tj Leshan Radio Company, LTD. 5 10 15 VDS(V) 20 25 30 Capacitance Rev.A Mar. 2022 4/6 LP3407ELT1G 30V P-Channel Enhancement-Mode MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 100 10us 10 ID(A) 100us 1 1ms DC result 10ms 100ms 0.1 0.01 PCB Size 1.5 x 1.5in(FR-4) 0.1 1 10 100 VDS(V) Notmalized Effective Transient Thermal Impedance Safe Operating Area 10 1 0.1 0.01 50% 25% 10% 5% P(pk) t1 t2 1% 1.Duty Cycle, D = t1 / t2 2.RθJA = 110 °C /W 3.TJ -TA =P*RθJA(t) 4.RθJA(t)=r(t)*RθJA 0.1% 0.001 Single Pulse 0.0001 0.000001 0.00001 FR4 Board 0.0001 0.001 0.01 0.1 Pulse time (s) 1 10 100 1000 Thermal Response Leshan Radio Company, LTD. Rev.A Mar. 2022 5/6 LP3407ELT1G 30V P-Channel Enhancement-Mode MOSFET 7.OUTLINE AND DIMENSIONS SOT23 DIM MIN NOR MAX A 0.89 1.12 A1 0.01 0.10 A2 0.88 0.95 1.02 b 0.30 0.50 b1 0.30 0.40 0.45 c 0.08 0.20 c1 0.08 0.10 0.16 D 2.80 2.90 3.04 E 2.10 2.64 E1 1.20 1.30 1.40 e 0.95BSC e1 1.90BSC L 0.40 0.46 0.60 L1 0.54REF θ 0º – 8º All Dimensions in mm 8.SOLDERING FOOTPRINT SOT23 DIM (mm) X 0.80 Y 0.90 A 2.00 B 0.95 C 0.95 Leshan Radio Company, LTD. Rev.A Mar. 2022 6/6 DISCLAIMER ● Curve guarantee in the specification. The curve of test items with electric parameter is used as quality guarantee. The curve of test items without electric parameter is used as reference only. ● Before you use our Products for new Porject, you are requested to carefully read this document and fully under-stand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales represe-ntative.