LP3407LT1G

LESHAN RADIO COMPANY, LTD. LP3407LT1G S-LP3407LT1G 30V P-Channel Enhancement-Mode MOSFET VDS -30V I D (V GS = -10V) RDS(ON) (VGS = -10V) RDS(ON) (VGS = -4.5V) -4.1A < 70mΩ < 100m Ω 3 1 2 FEATURES SOT– 23 (TO–236AB) The LP3407LT1G uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. S- Prefix for Automotive and Other Applications Req uiring Uniq ue Site and Control Change Req uirements; AEC-Q101 Qualified and PPAP Capable. D G ORDERING INFORMATION S Device Marking LP3407LT1G S-LP3407LT1G LP3407LT3G S-LP3407LT3G Shipping A07 3000/Tape&Reel A07 10000/Tape&Reel o MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Symbol VDS Parameter Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25°C C Power Dissipation B Junction and Storage Temperature Range V A -25 1.4 PD TA=70°C ±20 -3.5 IDM TA=25°C Units V -4.1 ID TA=70°C Maximum -30 W 0.9 TJ, TSTG -55 to 150 °C o THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Typ 70 100 63 Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Max 90 125 80 Units °C/W °C/W °C/W 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. Rev .O 1/6 LESHAN RADIO COMPANY, LTD. o ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V VDS=-24V, VGS=0V -30 Typ -1 -5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=-250µA -1 VGS=-10V, VDS=-5V -25 RDS(ON) Static Drain-Source On-Resistance -2 IS Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-4A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs V 100 VDS=-5V, ID=-4A DYNAMIC PARAMETERS Ciss Input Capacitance Coss nA -3 95 VGS=-4.5V, ID=-3A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current ±100 70 TJ=125°C Forward Transconductance 10 -0.7 mΩ mΩ S -1 V -2 A 415 520 625 pF 70 100 130 pF 40 65 90 pF 3.5 7.5 11.5 Ω 7.4 9.2 11 nC 3.7 4.6 6 nC 1.3 1.6 1.9 nC 1.3 2.2 3.1 nC 7.5 VGS=-10V, VDS=-15V, RL=3.6Ω, RGEN=3Ω IF=-4A, dI/dt=100A/µs µA A VGS=-10V, ID=-4.1A gFS Units V TJ=55°C VSD Max ns 5.5 ns 19 ns 7 ns 8.8 11 13 4 5.3 6.4 ns nC Rev .O 2/6 LESHAN RADIO COMPANY, LTD. LP3407LT1G , S-LP3407LT1G TYPICAL ELECTRICAL CHARACTERISTICS 30 30 -6V -4.5V 20 -ID (A) VDS=-5V 25 -10V 20 -ID(A) 25 15 -4V 15 10 10 25°C 125°C 5 5 VGS=-3.5V 0 0 0 1 2 3 4 0.5 5 2.5 3.5 4.5 5.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 80 1.8 Normalized On-Resistance 70 VGS=-4.5V 60 RDS(ON) (mΩ) 1.5 50 40 30 VGS=-10V 20 1.6 VGS=-10V ID=-4A 1.4 17 5 2 10 VGS=-4.5V 1.2 1 ID=-3A 0.8 10 0 2 4 6 8 0 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 120 ID=-4A 1.0E+01 100 40 80 -IS (A) RDS(ON) (mΩ) 1.0E+00 125°C 60 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 40 25°C 1.0E-04 1.0E-05 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Rev .O 3/6 LESHAN RADIO COMPANY, LTD. LP3407LT1G , S-LP3407LT1G TYPICAL ELECTRICAL CHARACTERISTICS 10 800 VDS=-15V ID=-4A 600 Capacitance (pF) -V GS (Volts) 8 6 4 Ciss 400 Coss 200 2 0 Crss 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0 100.0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 40 TA=25°C 10µs RDS(ON) limited 100µs 1ms 1.0 10ms 10ms 0.1 0.1 DC 1 VDS (Volts) 10 0 0.0001 100 ZθJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.01 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 20 10 10s TJ(Max)=150°C TA=25°C 0.0 0.01 30 Power (W) ID (Amps) 10.0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=125°C/W 0.1 PD 0.01 0.001 0.00001 Single Pulse 0.0001 0.001 Ton 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev .O 4/6 LESHAN RADIO COMPANY, LTD. LP3407LT1G , S-LP3407LT1G Gate Charge Test Circuit & W aveform Vgs Qg -10V + VDC - VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs VDC - DUT Vgs Rg td(on) td(off) tr tf 90% Vdd + Vgs 10% Vds Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Vgs L -Isd + Vdd VDC - -I F t rr dI/dt -I RM Vdd -Vds Rev .O 5/6 LESHAN RADIO COMPANY, LTD. LP3407LT1G , S-LP3407LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev .O 6/6