LP3415ELT1G

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP3415ELT1G S-LP3415ELT1G VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-4A = 60 mΩ RDS(ON), Vgs@-2.5V, Ids@-4A = 75 mΩ RDS(ON), Vgs@-1.8V, Ids@-2A = 85 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance 2 we declare that the material of product SOT– 23 (TO–236AB) compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device Ordering Information Device Shipping Marking LP3415ELT1G S-LP3415ELT1G LP3415ELT3G S-LP3415ELT3G P15 3000/Tape& Reel P15 10000/Tape& Reel Maximum Ratings and Thermal Characteristics (TA= 25oC unless otherwise noted) Symbol Limit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current ID -4 Pulsed Drain Current 1) IDM -30 Parameter o Maximum Power Dissipation TA = 25 C PD o TA = 75 C V A 1 W 0.6 Operating Junction and Storage Temperature Range Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance (PCB mounted) Unit 2) TJ, Tstg -55 to 150 RqJC 100 RqJA 150 o o C C/W Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing Rev .A 1/3 LESHAN RADIO COMPANY, LTD. LP3415ELT1G , S-LP3415ELT1G ELECTRICAL CHARACTERISTICS Parameter Test Condition Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250uA Drain-Source On-State Resistance RDS(on) VGS = -1.8V, ID = -2A 85.0 Drain-Source On-State Resistance RDS(on) VGS = -2.5V, ID = -4A 75.0 Drain-Source On-State Resistance RDS(on) VGS = -4.5V, ID = -4A 60.0 Gate Threshold Voltage VGS(th) VDS =VGS, ID = -250uA Zero Gate Voltage Drain Current IDSS Gate Body Leakage Gate Resistance -20 V -0.3 mΩ -1 V VDS = -16V, VGS = 0V -1 uA IGSS VGS = ± 8V, V DS = 0V ±10 uA Rg VDS = 0V, f = 1.0MHz Ω 6.5 3) Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS =-10V, ID = -4A VGS = -4.5V VDD = -10V, RL = 2.5Ω ID = -1A, VGEN = -4.5V RG = 3Ω 4.59 5.97 2.14 2.78 2.51 3.26 965.2 1930.4 1604 3208 7716 15432 3452 6904 nC ns 36.45 VDS = -10V, VGS = 0V f = 1.0 MHz pF 128.57 15.17 Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS VSD IS = -1A, VGS = 0V -2.2 A -1 V Note: Pulse test: pulse width