LP4101LT1G

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V LP4101LT1G S-LP4101LT1G RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ Features 3 Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current 1 Improved Shoot-Through FOM 2 we declare that the material of product SOT– 23 (TO–236AB) compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 D ▼ Simple Drive Requirement ▼ Small Package Outline G ▼ Surface Mount Device 1 2 S Ordering Information Device Marking Shipping LP4101LT1G S-LP4101LT1G P41 3000/Tape & Reel LP4101LT3G S-LP4101LT3G P41 10,000/Tape & Reel Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Symbol Limit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current ID -2.3 Pulsed Drain Current 1) IDM -8 Parameter o Maximum Power Dissipation TA = 25 C PD o TA = 75 C V A 0.9 W 0.57 TJ, Tstg Operating Junction and Storage Temperature Range 2) RqJA o -55 to 150 RqJC Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance (PCB mounted) Unit o 140 Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation 2 2. 1-in 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing Rev .O 1/5 C C/W LESHAN RADIO COMPANY, LTD. LP4101LT1G , S-LP4101LT1G ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250uA -20 - - V Drain-Source On-State Resistance RDS(on) VGS = -4.5V, ID = -2.8A 69 100 mΩ Drain-Source On-State Resistance RDS(on) VGS = -2.5V, ID = -2.0A 83 150 mΩ Gate Threshold Voltage VGS(th) VDS =VGS, ID = -250uA Zero Gate Voltage Drain Current IDSS VDS = -9.6V, VGS = 0V Gate Body Leakage IGSS VGS = ±8V, VDS = 0V Gate Resistance Rg Forward Transconductance gfs Static Dynamic -0.45 -0.95 V -1 uA ±100 nA Ω VDS = -5V, ID = -4.0A 6.5 S 3) Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -6V, ID = -2.8A VGS = -4.5V 15.23 nC 5.49 2.74 17.28 VDD = -6V, RL = 6Ω ΙD = −1Α, VGEN = -4.5V RG = 6Ω 3.73 ns 36.05 6.19 882.51 VDS = -6V, VGS = 0V f = 1.0 MHz pF 145.54 97.26 Source-Drain Diode Max. Diode Forward Current IS Diode Forward Voltage VSD IS = -0.75A, VGS = 0V -0.8 -2.4 A -1.2 V Note: Pulse test: pulse width