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LP4565T1G

LP4565T1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOP-8

  • 描述:

    LP4565T1G

  • 数据手册
  • 价格&库存
LP4565T1G 数据手册
LP4565T1G SO-8 P-Channel 60-V (D-S) MOSFET 1. Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed 2. Typical Applications: • Load Switches • DC/DC Conversion • Motor Drives 3. ORDERING INFORMATION Device LP4565T1G Marking Shipping LP4565 4000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC unless otherwise stated) Drain−to−Source Voltage Symbol VDSS Limits -60 Unit V Gate−to−Source Voltage VGS ±20 V Parameter TA =25°C Continuous Drain Current(Note 1) TA =70°C Pulsed Drain Current (Note 2) Continuous Source Current (Diode Conduction)(Note 1) TA =25°C Power Dissipation(Note 1) TA =70°C Operating Junction and Storage Temperature Range ID -7 -5 A IDM -20 A IS -1.6 A PD 2.9 1.8 W TJ , TSTG −55 ~+150 ºC Symbol Max Unit RθJA 45 Note: 1.Surface Mounted on 1” x 1” FR4 Board. 2.Pulse width limited by maximum junction temperature. 5. THERMAL CHARACTERISTICS Parameter Maximum Junction-to-Ambient (Note 1) Leshan Radio Company, LTD. t≤10S Steady State Rev.A Nov. 2019 95 ºC/W 1/3 LP4565DT1AG 60V P-Channel Enhancement MOSFET 6. Electrical Characteristics Characteristic Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-Resistance a rDS(on) Forward Transconductance a Diode Forward Voltage a gfs VSD Test Conditions Static VDS = VGS, ID = -250 uA VDS = 0 V, VGS = ±20 V VDS = -48 V, VGS = 0 V VDS = -48 V, VGS = 0 V, TJ = 55°C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -4 A VGS = -4.5 V, ID = -3.2 A VDS = -15 V, ID = -4 A IS = -2.1 A, VGS = 0 V Min. Min Typ. Typ Max. Max -1 ±10 -1 -10 -7.5 Unit V uA uA A 82 100 9 -0.83 mΩ S V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = -30 V, VGS = -4.5 V, ID = -4 A VDS = -30 V, RL = 7.5 Ω, ID = -4 A, VGEN = -10 V, RGEN = 6 Ω VDS = -15 V, VGS = 0 V, f = 1 Mhz 10 4.2 3.1 7 5 37 14 1146 84 60 nC ns pF Notes a. Pulse test: PW
LP4565T1G 价格&库存

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LP4565T1G
    •  国内价格
    • 5+1.49105
    • 50+1.19254
    • 150+1.06467
    • 500+0.90504
    • 2500+0.83398

    库存:0