LRB520S-40T1G

LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE zApplictions LRB520S-40T1G Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. (SOD523) High reliability 2 Low I R . z Construction SOD-523 Silicon epitaxial planar z We declare that the material of product compliance with RoHS requirements. Ordering Information Device Marking 1 Cathode Shipping LRB520S-40T1G D 3000/Tape&Reel LRB520S-40T3G D 10000/Tape&Reel 2 Anode MAXIMUM RATINGS (TA = 25°C) Symbol Limits Unit Reverse voltage(repetitive peak) Parameter VR DC reverse voltage Average rectified forward current VR IO 40 40 200 V V mA Peak forward surge current I FSM 1 A Junction temperature Tj Storage temperature Tstg 125 -40~+125 °C °C ELECTRICAL CHARACTERISTICS(TA = 25°C) Parameter Forward voltage Symbol VF Min. - Max. 0.39 V Unit Conditions I F=10mA Forward voltage VF - 0.55 V I F=100mA Reverse current IR - 1 µΑ VR=10V Reverse current IR - 10 µΑ VR=40V Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LRB520S-40T1G zElectrical characteristic curves 1000 1000 Ta=75℃ 10 Ta=25℃ 1 Ta=-25℃ 0.1 0.01 f=1MHｚ Ta=75℃ 10 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 0.001 0.001 100 200 300 400 500 600 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 40 480 AVE:491.2mV 470 800 600 500 400 AVE:67.0nA 200 30 25 20 15 AVE:23.2pF 10 5 0 0 Ct DISPERSION MAP 15 8.3ms 15 AVE:5.60A 5 0 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm 10 35 100 10 20 40 IR DISPERSION MAP 30 Ifsm 8.3ms 8.3ms 1cyc 5 0 1 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISPERSION MAP 0.3 Mounted on epoxy board IM=1mA IF=200mA 30 Ta=25℃ f=1MHz VR=0V n=10pcs 45 700 300 20 50 Ta=25℃ VR=10V n=30pcs VF DISPERSION MAP 25 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) 490 10000 30 900 460 Ifsm t 10 5 0 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.01 1ms time Rth(j-a) 300us Rth(j-c) 100 FORWARD POWER DISSIPATION:Pf(W) 0.008 1000 D=1/2 REVERSE POWER DISSIPATION:PR (W) PEAK SURGE FORWARD CURRENT:IFSM(A) 20 1000 Ta=25℃ IF=100mA n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 510 500 10 1 0.0001 0 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 100 Ta=125℃ 100 REVERSE CURRENT:IR(μA) FORWARD CURRENT:IF(mA) Ta=125℃ 0.2 Sin(θ＝180) DC 0.1 DC 0.006 D=1/2 0.004 Sin(θ＝180) 0.002 10 0.001 0 0 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.5 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.O 2/4 LESHAN RADIO COMPANY, LTD. LRB520S-40T1G 0.5 0.4 t DC T 0.3 VR D=t/T VR=20V Tj=125℃ D=1/2 0.2 0.1 Sin(θ＝180) 0 Io 0A 0V Io 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 0.5 t 0.4 DC T VR D=t/T VR=20V Tj=125℃ 0.3 D=1/2 0.2 0.1 Sin(θ＝180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curve (Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve (Io-Tc) Rev.O 3/4 LESHAN RADIO COMPANY, LTD. LRB520S-40T1G SOD -523 NOTES: −X− D 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. −Y− BASE MATERIAL. E 2X b 0.08 1 TRUSIONS, OR GATE BURRS. 2 DIM A b c D E HE L L2 X Y M TOP VIEW A c MILLIMETERS MIN NOM MAX 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 1.10 1.20 1.30 0.70 0.80 0.90 1.50 1.60 1.70 0.30 REF 0.15 0.20 0.25 HE SIDE VIEW RECOMMENDED SOLDERING FOOTPRINT* 2X 1.80 0.48 2X 0.40 PACKAGE OUTLINE      Rev.O 4/4