0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
LRB521S-30T1G

LRB521S-30T1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOD523(SC-79)

  • 描述:

    SOD523-2 Vr: 30V If:1A

  • 详情介绍
  • 数据手册
  • 价格&库存
LRB521S-30T1G 数据手册
LRB521S-30T1G S-LRB521S-30T1G Schottky Barrier Diode 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOD523(SC-79) qualified and PPAP capable. ● Extremely fast switching speed ● Extremely low forward voltage 0.5V (max) @ IF = 200 mA ● Low reverse current 2. APPLICATIONS ● Low current rectification and high speed switching 3. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LRB521S-30T1G 5M 3000/Tape&Reel LRB521S-30T5G 5M 8000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter DC Reverse Voltage Mean Rectifying Current Peak Forward Surge Current Symbol Limits Unit VR 30 V IO 200 mA IFMS 1 A 5. THERMAL CHARACTERISTICS Parameter Limits Unit FR−5 Board (Note 1) @ TA = 25ºC 200 mW Derate above 25ºC 1.57 mW/ºC RΘJA 635 ºC/W TJ,Tstg −40∼+125 °C Total Device Dissipation, Thermal Resistance, Symbol PD Junction–to–Ambient(Note 1) Junction and Storage temperature 1. FR–5 = 1.0×0.75×0.062 in. 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Forward voltage(IF=200mA) Reverse Current(VR=10V) Leshan Radio Company, LTD. Symbol VF Min. Typ. Max. - - 0.5 Unit V IR - - 30 μA Rev.B Mar 2016 1/3 LRB521S-30T1G, S-LRB521S-30T1G Schottky Barrier Diode 7.ELECTRICAL CHARACTERISTICS CURVES 1000 100000 10000 125℃ 1000 85℃ 100 IR,Reverse Current(uA) IF,Forward Current(mA) 125℃ 85℃ 25℃ 10 100 25℃ 10 1 0.1 -55℃ -55℃ 0.01 1 0.001 0 0.1 0.2 0.3 0.4 VF,Forward Voltage(V) 0.5 0.6 Forward Characteristics 0 5 10 15 20 VR,Reverse Voltage(V) 25 30 Reverse Characteristics 100 C,Capacitor(pF) f=1MHz 10 1 0 10 20 30 VR, Reverse Voltage(V) 40 Capacitor Characteristics Leshan Radio Company, LTD. Rev.B Mar 2016 2/3 LRB521S-30T1G, S-LRB521S-30T1G Schottky Barrier Diode 8.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.50 NOM MAX MIN NOM MAX 0.60 0.70 0.020 0.024 0.028 b 0.25 0.30 0.35 0.010 0.012 0.014 c 0.07 0.14 0.20 0.003 0.006 0.008 D 1.10 1.20 1.30 0.043 0.047 0.051 E HE 0.70 0.80 0.90 0.028 0.031 0.035 1.50 1.60 1.70 0.059 0.063 0.067 L L2 0.30 REF 0.15 0.20 0.012 REF 0.25 0.006 0.008 0.010 9.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.B Mar 2016 3/3
LRB521S-30T1G
物料型号:LRB521S-30T1G 器件简介:LRB521S-30T1G是一款来自LRC品牌的MOSFET,具有30V的电压等级和1.5A的连续漏极电流。

引脚分配:G-D-S(栅极-漏极-源极) 参数特性:Vds=30V,Id=1.5A,Vgs=±20V,Ciss=45pF,Qg=35nC,ft=2.5GHz。

功能详解:该器件是一个低压MOSFET,适用于射频放大器、开关电源、通信设备等高频应用。

应用信息:LRB521S-30T1G适用于需要高频率、高效率和低噪声的场合,如无线通信、卫星通信、雷达系统等。

封装信息:SOT-23-3,一种小型化、表面贴装的封装形式。
LRB521S-30T1G 价格&库存

很抱歉,暂时无法提供与“LRB521S-30T1G”相匹配的价格&库存,您可以联系我们找货

免费人工找货
LRB521S-30T1G
    •  国内价格
    • 5+0.08658
    • 50+0.07846
    • 500+0.06764
    • 1000+0.05952
    • 2500+0.05574

    库存:3135

    LRB521S-30T1G
      •  国内价格
      • 50+0.10293
      • 500+0.08392
      • 3000+0.07344

      库存:22530

      LRB521S-30T1G
      •  国内价格
      • 20+0.12440
      • 100+0.10750
      • 300+0.09040
      • 800+0.06790
      • 3000+0.05650

      库存:78900

      LRB521S-30T1G
        •  国内价格
        • 1+0.07370

        库存:23202