LRB521S-40T1G

LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-40T1G S-LRB521S-40T1G zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. (SOD523) IO=200mA guaranteed despite the size. Low VF. 2 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SOD-523 z Construction 2 Anode 1 Cathode Silicon epitaxial planar z We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device LRB521S-40T1G S-LRB521S-40T1G LRB521S-40T3G S-LRB521S-40T3G Marking Shipping S 3000/Tape&Reel S 10000/Tape&Reel MAXIMUM RATINGS (TA = 25°C) Parameter DC reverse voltage Mean rectifying current Peak forward surge current* Junction temperature Storage temperature Symbol VR IO IFSM Tj Tstg Limits 40 200 4 125 -55~+125 Unit V mA A °C °C *60Hz for 1 ELECTRICAL CHARACTERISTICS(TA = 25°C) Parameter Forward voltage Symbol VF 0.16 Max. 0.30 V Conditions I F=10mA Forward voltage VF 0.31 0.45 V I F=100mA Forward voltage VF 0.37 0.52 V IF=200mA Reverse current IR - 20 µΑ VR=10V IR - 90 µΑ VR=40V ESD 8 - K V C=100pF,R=1.5K Ω forward and reverse:1 time Reverse current ESD break down voltage Min. Unit Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LRB521S-40T1G , S-LRB521S-40T1G zElectrical characteristic curves Ta=150℃ Ta=-25℃ 10 Ta=25℃ Ta=125℃ 1000 Ta=75℃ 100 10 Ta=25℃ 10 1 Ta=-25℃ 0.1 0.01 1 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 600 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1 30 0 510 500 490 AVE:495.2mV 480 80 70 60 50 40 30 AVE:6.86uA 20 Ta=25℃ f=1MHz VR=0V n=10pcs 29 10 28 27 26 AVE:27.2pF 25 24 23 22 21 0 20 VF DISPERSION MAP Ct DISPERSION MAP IR DISPERSION MAP 20 10 Ifsm 15 8.3ms 10 5 AVE:5.60A 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 5 0 0 1 10 Ifsm t 5 0 100 1 1000 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISPERSION MAP 0.3 5 Rth(j-a) D=1/2 FORWARD POWER DISSIPATION:Pf(W) 0.25 Rth(j-c) 100 Mounted on epoxy board IM=1mA 1ms IF=20mA time 0.1 10 TIME:(s) Rth-t CHARACTERISTICS 0.2 DC Sin(θ＝180) 0.15 0.1 1000 3 D=1/2 2 Sin(θ＝180) DC 1 0.05 300us 10 0.001 4 REVERSE POWER DISSIPATIONPR (w) PEAK SURGE FORWARD CURRENT:IFSM(A) 30 30 Ta=25℃ VR=40V n=30pcs 90 REVERSE CURRENT:VR(uA) Ta=25℃ IF=200mA n=30pcs 470 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 520 FORWARD VOLTAGE:VF(mV) f=1MHz 10000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 100 Ta=150℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD CURRENT:IF(mA) Ta=75℃ 100 REVERSE CURRENT:IR(uA) 100000 1000 0 0 0 0.1 0.2 0.3 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pｆ CHARACTERISTICS 0.4 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-PR CHARACTERISTICS 40 Rev.O 2/4 LESHAN RADIO COMPANY, LTD. LRB521S-40T1G , S-LRB521S-40T1G 0A 0V 0.4 DC t T 0.3 Sin(θ＝180) 0.2 0.5 Io VR D=t/T VR=20V Tj=150℃ 0.1 D=1/2 0 AVERAGE RECTIFIED FORWARD CURRENT Io(A) AVERAGE RECTIFIED FORWARD CURRENT Io(A) 0.5 0A 0V 0.4 Io t DC T VR D=t/T VR=20V Tj=150℃ 0.3 D=1/2 0.2 0.1 Sin(θ＝180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE：Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE：Tc(℃) Derating Curveﾞ(Io-Tc) Rev.O 3/4 LESHAN RADIO COMPANY, LTD. OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.50 b 0.25 NOM MAX MIN NOM MAX 0.60 0.70 0.020 0.024 0.028 0.30 0.35 0.010 0.012 0.014 c 0.07 0.14 0.20 0.003 0.006 0.008 D 1.10 1.20 1.30 0.043 0.047 0.051 E HE 0.70 0.80 0.90 0.028 0.031 0.035 1.50 1.60 1.70 0.059 0.063 0.067 0.25 0.006 0.008 0.010 L L2 0.30 REF 0.15 0.20 0.012 REF SOLDERING FOOTPRINT Rev.O 4/4