LRC099-04AT1G

LESHAN RADIO COMPANY, LTD. 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY LRC099-04AT1G DESCRIPTIONS The LRC099-04AT1G is a 4-channel ultra low capacitance rail clamp ESD protection diodes array. Each channel consists of 3 a pair of ESD diodes that steer positive or negative ESD current to either the positive or negative rail. A zener diode is integrated 4 in to the array between the positive and negative supply rails. 5 2 1 6 In the typical applications, the negative rail pin (assigned as GND) is connected with system ground. The Positive ESD current is TSOP-6 steered to the ground through an ESD diode and Zener diode and the positive ESD voltage is clamped to the zener voltage. The LRC099-04AT1G is idea to protect high speed data lines. Three package type is provided for easy PCB layout. FEATURES APPLICATIONS * 4 channels of ESD protection; * HDMI / DVI ports; * Provides ESD protection to IEC61000-4-2 level 4 * Display Port interface; - ±15kV air discharge * 10M / 100M / 1G Ethernet; - ±8kV contact discharge; * USB 2.0 interface; * Channel I/O to GND capacitance: 0.9pF(Max) * VGA interface * Channel I/O to I/O capacitance: 0.45pF(Max) * Set-top box; * Low clamping voltage; * Flat panel Monitors / TVs; * Low operating voltage; * PC / Note book * Improved zener structure; * Optimized package for easy high speed data lines PCB layout; * RoHS compliant. ORDERING INFORMATION Part No. LRC099-04AT1G Package TSOP-6 Marking C96 Material Halogen Free Shipping 3000Tape&Reel 1/5 LESHAN RADIO COMPANY, LTD. LRC099-04AT1G PIN CONFIGURATION TSOP-6 ABSOLUTE MAXIMUM RATINGS Characteristics Symbol Ratings Unit Peak Pulse Power(8/20μs) PPP 150 W Peak Pulse Current(8/20μs) IPP 5 A ESD per IEC 61000-4-2(Air) VESD1 ±15kV kV ESD per IEC 61000-4-2(Contact) VESD2 ±8kV kV Operating Temperature Range Topr -55 ~ +125 Storage Temperature Range Tstg -55 ~ +150 °C °C ELECTRICAL CHARACTERISTICS(Tamb=25°C) Characteristics Reverse Working Voltage Reverse Breakdown Voltage Reverse Leakage Current Positive Clamping Voltage Negative Clamping Voltage Junction Capacitance Between Channel Junction Capacitance Between I/O And GND Symbol VRWM VBR IR Test Conditions Min. Typ. Any I/O pin to GND It =1mA; Any I/O pin to GND Max. Unit 5 V 6 V VRWM =5V, T=25°C; Any I/O pin to GND 1 μA 12.0 V IPP=1A, tP=8/20 μ s; VC1 Positive pulse; 8.5 Any I/O pin to GND IPP=1A, tP=8/20μs; VC2 Negative pulse; 1.8 V Any I/O pin to GND CJ1 CJ2 VR=0V, f=1MHz; Between I/O pins VR=0V, f=1MHz; Any I/O pin to GND 0.35 0.45 pF 0.9 pF 2/5 LESHAN RADIO COMPANY, LTD. LRC099-04AT1G TYPICAL ELECTRICAL CHARACTERISTICS CURVE μ μ μ μ 3/5 LESHAN RADIO COMPANY, LTD. LRC099-04AT1G TYPICAL ELECTRICAL CHARACTERISTICS CURVE 4/5 LESHAN RADIO COMPANY, LTD. LRC099-04AT1G TSOP-6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 5 4 2 3 E HE 1 b e q c A 0.05 (0.002) L A1 DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° - MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 - MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches 5/5