LRC8804FDT1G

LESHAN RADIO COMPANY, LTD. 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY LRC8 8 04FDT1G The LRC8804FDT1G is a 4-channel ultra low capacitance rail clam ESD protection diodes array . Each channel consists of a pair of diodes that steer positive or negative ESD current to either the positive or negative rail . A zener diode is integrated in to the array between the positive and negative supply rails. In the typical applications, the negative rail pin (assigned as GND) is connected with system ground . The Positive ESD current is DFN-2510 steered to the ground through an ESD diode and Zener diode and the positive ESD voltage is clamped to the zener voltage. The LRC8804FDT1G is idea to protect high speed data lines. PIN CONFIGURATION ●APPLICATIONS 1) HDMI / DVI ports 2)Display Port interface 3)10M / 100M / 1G Ethernet 4)USB 3.1 interface 4)VGA interface 5)Set-top box 6)Flat panel Monitors / TVs 7)PC / Note book I/O I/O Pin 1 Pin 2 I/O I/O Pin 4 Pin 5 GND Pin 3 ●FEATURES 1) 4 channels of ESD protection; 2)Provides ESD protection to IEC61000-4-2 level 4 - ±15kV air discharge - ±15kV contact discharge; 3) Channel I/O to GND capacitance: 0.3pF(Max) 4) Channel I/O to I/O capacitance: 0.28pF(Max) 5) Low clamping voltage; 6) Low operating voltage; 7) Improved zener structure; 8) Optimized package for easy high speed data lines PCB layout; 9) RoHS compliant. ●DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LRC8804FDT1G 24E 3000Tape&Reel Mar. 2019 Rev.A 1/4 LESHAN RADIO COMPANY, LTD. LRC8 8 04FDT1G ●ABSOLUTE MAXIMUM RATINGS Parameter Peak Pulse Power(8/20us) Peak Pulse Current(8/20us) ESD per IEC 61000-4-2(Air) ESD per IEC 61000-4-2(Contact) Operating Temperature Range Storage Temperature Range Symbol Limits Unit PPP 75 W IPP 5 A VESD1 ±15 kV VESD2 kV ±15 -55 ~ +125 °C Topr -55 ~ +150 °C Tstg ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) Parameter Symbol Min. Typ. Max. Reverse Working Voltage VRWM – – 5 V VBR 5.5 – – V IR – – 0.3 VRWM =5V, T=25°C; μA Any I/O pin to GND Clamping Voltage VC – – 10 V Junction Capacitance Between Channel CJ1 – 0.2 0.28 VR=0V, f=1MHz; pF Between I/O pins Junction Capacitance Between I/O And GND CJ2 – 0.25 0.3 VR=0V, f=1MHz; pF Any I/O pin to GND Reverse Breakdown Voltage Reverse Leakage Current Mar. 2019 Unit Conditions Any I/O pin to GND It =1mA; Any I/O pin to GND IPP=1A, tP=8/20μs; Any I/O pin to GND Rev.A 2/4 LESHAN RADIO COMPANY, LTD. LRC8 8 04FDT1G IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 1. IEC61000−4−2 Spec ESD Gun Oscilloscope TVS 50 W Cable 50 W Figure 2. Diagram of ESD Clamping Voltage Test Setup % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 80 Figure 3. 8 X 20 ms Pulse Waveform Mar. 2019 Rev.A 3/4 LESHAN RADIO COMPANY, LTD. LRC8 8 04FDT1G DFN-2510 Dim A A1 A3 b b1 D e E L L1 z All Mar. 2019 DFN2510 Min Typ Max 0.48 0.53 0.58 0 0.02 0.05 0.152 0.17 0.22 0.27 0.37 0.42 0.47 2.45 2.50 2.55 0.45 0.50 0.55 0.95 1.00 1.05 0.33 0.38 0.43 0.46 0.51 0.56 0.10 0.15 0.20 Dimensions in mm DFN2510 mm c X X1 X2 Y Y1 Y2 Y3 0.5 2.25 0.45 0.25 1.4 0.625 0.575 0.7 Rev.A 4/4