LSI1012N3T5G

LSI1012N3T5G S-LSI1012N3T5G N-Channel 1.8-V (G-S) MOSFET 1. FEATURES SOT883 ● Power MOSFET: 1.8-V Rated ● Gate-Source ESD Protected ● High-Side Switching ● Low On-Resistance: 0.7Ω ● Low Threshold: 0.8 V (typ) ● Fast Switching Speed: 10 ns ● We declare that the material of product compliance with 3 Drain RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring Source 2 Gate 1 unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. BENEFITS ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-Voltage Operation ● High-Speed Circuits ● Low Battery Voltage Operation 3. APPLICATIONS ● Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories. ● Battery Operated Systems ● Power Supply Converter Circuits ● Load/Power Switching Cell Phones, Pagers 4. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LSI1012N3T5G A2 10000/Tape&Reel 5. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±6 V Continuous Drain Current (TJ = 150℃) (Note 2) TA = 25℃ TA = 85℃ ID Pulsed Drain Current(Note 1) IDM Continuous Source Current (diode conduction)(Note 2) IS PD Maximum Power Dissipation(Note 2) 600 500 400 350 1000 275 250 RθJA Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature Range TJ , Tstg mA −55 ~+150 250 mW 500 ℃/W ℃ 1.Pulse width limited by maximum junction temperature. 2.Surface Mounted on FR4 Board. Leshan Radio Company, LTD. Rev.D May. 2021 1/5 LSI1012N3T5G,S-LSI1012N3T5G N-Channel 1.8-V (G-S) MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Static Characteristic Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Gate Threshold Voltage (VDS = VGS , ID = 250µA ) Gate-Body Leakage (VDS = 0 V, VGS = ±4.5 V) Symbol Min. Typ. Max. Unit V(BR)DSS 20 - - V VGS(th) 0.45 - 0.9 V IGSS - ±0.5 ±1 µA IDSS - 0.3 100 nA - - 5 µA - 0.41 0.7 - 0.53 0.85 Ω - 0.7 1.25 VSD - 0.8 1.2 Qg - 750 - Qgs - 75 - Qgd td(on) - 225 5 - tr - 5 - tf - 25 11 - Ciss Coss Crss - 43.5 5.8 5.8 - Zero Gate Voltage Drain Current (VDS = 20 V, VGS = 0 V ) (VDS = 20 V, VGS = 0 V, TJ = 85℃) Drain-Source On-State Resistance(Note 1) (VGS = 4.5 V, ID = 600 mA) RDS(on) (VGS = 2.5 V, ID = 500 mA) (VGS = 1.8 V, ID = 350 mA) Diode Forward Voltage(Note 1) (IS = 150 mA, VGS = 0 V) V Dynamic(Note 2) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance (VDS = 10 V, VGS = 4.5 V, ID = 250 mA) (VDD = 10 V, RL = 47Ω,ID=200 mA, VGEN = 4.5 V, RG = 10Ω) (VDS = 16 V, VGS = 0 V, f = 1 MHz) Reverse Transfer Capacitance td(off) pC ns pF 3.Pulse test; pulse width ≤300 µs, duty cycle ≤ 2%. 4.Guaranteed by design, not subject to production testing. Leshan Radio Company, LTD. Rev.D May. 2021 2/5 LSI1012N3T5G,S-LSI1012N3T5G N-Channel 1.8-V (G-S) MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES 1 1 0.9 0.8 VDS=5V 0.9 0.8 0.7 ID,Drain Current(A) ID,Drain Current(A) Ta=25℃ VGS=1.6V,1.8V, 2V,3V,4V,4.5V VGS=1.4V 0.6 0.5 0.4 VGS=1.2V 0.7 0.6 0.5 0.4 0.3 0.3 0.2 0.2 VGS=1V 0.1 125℃ 25℃ -50℃ 0.1 0 0 0 1 2 VDS,Drain to Source Voltage(V) 3 0 0.5 1 1.5 VGS,Gate to Source Voltage(V) ID vs. VDS ID vs. VGS 0.6 0.6 Ta=25℃ 0.55 0.4 125℃ 25℃ RDSON,ON resistance(Ω) IS,Diode Forward Current(A) 0.5 -50℃ 0.3 0.2 0.5 0.45 VGS=1.8V 0.4 0.35 VGS=2.5V 0.3 0.1 VGS=4.5V 0.25 0.2 0 0.4 0.6 0.8 VSD,Diode Forward Voltage(V) 1 0 0.4 0.6 0.8 1 ID,Drain Current(A) IS vs. VSD Leshan Radio Company, LTD. 0.2 RDSON vs. ID Rev.D May. 2021 3/5 LSI1012N3T5G,S-LSI1012N3T5G N-Channel 1.8-V (G-S) MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.6 50 45 25℃ ID=200mA 0.5 40 RDSON ON Resistance(Ω) RDSON,On Resistance(Ω) -50℃ 35 125℃ 30 25 20 15 10 VGS=1.8V,ID=350mA 0.4 0.3 VGS=4.5V,ID=600mA 0.2 0.1 5 0 0 0 2 4 VGS,Gate to Source Voltage(V) 6 -50 -25 0 25 50 75 TJ,Temperature(℃ ) 125 RDSON vs. TJ RDSON vs. 0.8 120 110 0.75 f=1MHz Ta=25℃ ID=0.25mA 0.7 VGSTH(V) 100 Ciss(pF) 100 90 80 0.65 0.6 70 0.55 60 0.5 50 0.45 40 0.4 0 2 4 6 8 VDS Drain To Source Voltage(V) 10 -50 0 25 50 75 Tj,Temperature(℃) 100 125 VGSTH vs. Ciss Leshan Radio Company, LTD. -25 Rev.D May. 2021 4/5 LSI1012N3T5G,S-LSI1012N3T5G N-Channel 1.8-V (G-S) MOSFET 8.OUTLINE AND DIMENSIONS DIM D SOT883 MIN TYP MAX 0.95 1.00 1.05 E 0.55 0.60 0.65 e - 0.64 - e1 - 0.34 - L 0.19 0.24 0.29 L1 0.22 0.27 0.32 b 0.10 0.15 0.20 b1 0.44 0.49 0.54 A 0.43 0.48 0.53 A1 0 - 0.05 All Dimensions in mm 9.SOLDERING FOOTPRINT Dimensions c X X1 X2 Y Y1 Leshan Radio Company, LTD. Rev.D May. 2021 (mm) 0.70 1.10 0.40 0.40 0.20 0.55 5/5 DISCLAIMER ● Before you use our Products, you are requested to carefully read this document and fully understand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales representative.