LSI1012XT1G

LSI1012XT1G S-LSI1012XT1G N-Channel 1.8-V (G-S) MOSFET 1. FEATURES ● Gate-Source ESD Protected ● High-Side Switching ● Low On-Resistance: 0.7Ω ● Low Threshold: 0.8 V (typ) ● Fast Switching Speed: 10 ns ● We declare that the material of product compliance with SC89 Gate RoHS requirements and Halogen Free. ● 1 S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 3 Drain qualified and PPAP capable. Source 2 2. APPLICATION ● Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories ● Battery Operated Systems ● Power Supply Converter Circuits ● Load/Power Switching Cell Phones, Pagers (Top View) MARKING DIAGRAM 3. DEVICE MARKING AND RESISTOR VALUES A Device Marking Shipping LSI1012XT1G A 3000/Tape&Reel LSI1012XT3G A 10000/Tape&Reel 1 M 3 2 A = Specific Device Code M = Month Code 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current (TJ = 150℃) (Note 2) TA = 85℃ ID TA = 25℃ TA = 85℃ Operating Junction and Storage Temperature Range IS PD TJ , Tstg ±6 V 500 400 350 1000 275 250 275 250 160 140 −55 ~+150 Unit V 600 IDM Continuous Source Current (diode conduction)(Note 2) Steady State 20 VGS TA = 25℃ Pulsed Drain Current(Note 1) Maximum Power Dissipation(Note 2) 5 secs mA mW ℃ 1.Pulse test; pulse width ≤300 µs, duty cycle ≤2%. 2.Guaranteed by design, not subject to production testing. Leshan Radio Company, LTD. Rev.D Jan. 2021 1/5 LSI1012XT1G, S-LSI1012XT1G N-Channel 1.8-V (G-S) MOSFET 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Static Characteristic Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Gate Threshold Voltage (VDS = VGS , ID = 250µA ) Gate-Body Leakage (VDS = 0 V, VGS = ±4.5 V) Symbol Min. Typ. Max. Unit V(BR)DSS 20 - - V VGS(th) 0.45 - 0.9 V IGSS - ±0.5 ±1 µA IDSS - 0.3 100 nA - - 5 µA - 0.41 0.7 - 0.53 0.85 Ω - 0.7 1.25 VSD - 0.8 1.2 Zero Gate Voltage Drain Current (VDS = 20 V, VGS = 0 V ) (VDS = 20 V, VGS = 0 V, TJ = 85℃) Drain-Source On-State Resistance(Note 1) (VGS = 4.5 V, ID = 600 mA) RDS(on) (VGS = 2.5 V, ID = 500 mA) (VGS = 1.8 V, ID = 350 mA) Diode Forward Voltage(Note 1) (IS = 150 mA, VGS = 0 V) V Dynamic(Note 2) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Leshan Radio Company, LTD. (VDS = 10 V, VGS = 4.5 V, ID = 250 mA) (VDD = 10 V, RL = 47Ω,ID=200 mA, VGEN = 4.5 V, RG = 10Ω) Qg - 750 - Qgs - 75 - Qgd 225 td(on) - 5 - tr - 5 - td(off) - 25 - tf Rev.D Jan. 2021 11 pC ns 2/5 LSI1012XT1G, S-LSI1012XT1G N-Channel 1.8-V (G-S) MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES 0.5 0.45 0.4 0.4 ID Drain Current(A) 0.45 0.35 ID Drain Current(A) 0.5 VGS=2V,2.5V,3V VGS=1.5V 0.3 0.25 VGS=1.4V 0.2 0.15 VDS=10V 0.35 25℃ 0.3 0.25 0.2 -55℃ 0.15 150℃ VGS=1.3V 0.1 0.1 VGS=1.2V 0.05 0.05 0 0 0 1 2 3 4 VDS Drain to Source Voltage(V) 5 0.0 0.5 1.0 1.5 VGS Gate to Source Voltage(V) ID vs. VGS ID vs. VDS 1.0 1 0.8 RDS(on) On Resistance (Ω) IS Diode Forward Current(A) 0.9 0.1 25℃ 150℃ -55℃ 0.01 VGS=1.8V 0.7 0.6 0.5 VGS=2.5V 0.4 0.3 VGS=4.5V 0.2 0.1 0.0 0.001 0.2 0.4 0.6 0.8 VSD Diode Forward Voltage(V) 1.0 0.2 0.6 RDS(on) vs. ID IS vs. VSD Leshan Radio Company, LTD. 0.3 0.4 0.5 ID,Drain Current(A) Rev.D Jan. 2021 3/5 LSI1012XT1G, S-LSI1012XT1G N-Channel 1.8-V (G-S) MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.7 1.6 ID=600mA 0.6 RDS(on) On Resistance (Ω) RDS(on) On Resistance (Ω) 1.4 1.2 25℃ 1.0 0.8 150℃ 0.6 VGS=2.5V,ID=500mA 0.5 0.4 0.3 VGS=4.5V,ID=600mA 0.2 0.4 0.1 -55℃ 0.2 0.0 0.0 1 2 3 4 VGS Gate to Source Voltage(V) -50 5 -25 0 RDS(on) vs. VGS 25 50 75 100 125 150 Tj Temperature(℃) RDS(on) vs. Tj 100 1.0 90 ID=250uA f=1.0MHz Ta=25℃ Capacitance(pF) VGSTH Threshold Voltage (V) 80 0.8 0.6 70 Ciss 60 50 40 30 Coss 20 10 Crss 0 0.4 -50 -25 0 25 50 75 Tj Temperature(℃) 100 125 150 0 10 15 20 VDS Drain to Source Voltage(V) Capacitance VGSTH vs. Tj Leshan Radio Company, LTD. 5 Rev.D Jan. 2021 4/5 LSI1012XT1G, S-LSI1012XT1G N-Channel 1.8-V (G-S) MOSFET 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 1.50 NOM MAX MIN NOM MAX 1.60 1.70 0.059 0.063 0.067 B 0.75 0.85 0.95 0.030 0.034 0.040 C 0.60 0.70 0.80 0.024 0.028 0.031 D 0.23 0.28 0.33 0.009 0.011 0.013 G 0.50BSC 0.020BSC H 0.53REF 0.021REF J 0.10 0.15 0.20 0.004 0.006 0.008 K 0.30 0.40 0.50 0.012 0.016 L 1.10REF 0.02 0.043REF M --- --- 10° --- --- 10° N --- --- 10° --- --- 10° S 1.50 1.60 1.70 0.059 0.063 0.067 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.D Jan. 2021 5/5 DISCLAIMER ● Before you use our Products, you are requested to carefully read this document and fully understand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales representative.