LSI1013LT1G

LESHAN RADIO COMPANY, LTD. LSI1013LT1G S-LSI1013LT1G P-Channel 1.8-V (G-S) MOSFET FEATURES D D D D D D D 3 TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 1.2 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 14 ns S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 SOT-23 BENEFITS D D D D D Gate 1 Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation 3 Source 2 APPLICATIONS (Top View) D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers MARKING DIAGRAM 3 Marking Shipping LSI1013LT1G S-LSI1013LT1G LSI1013LT3G S-LSI1013LT3G A1 3000/Tape&Reel A1 10000/Tape&Reel A1 1 M ORDERING INFORMATION Device 2 A1 = Specific Device Code M = Month Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS "6 Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (diode conduction)b Maximum Power Dissipation Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) TA = 25_C TA = 85_C ID IS PD V -350 -400 -300 IDM Unit -275 -1000 -275 mA -250 225 mW TJ, Tstg −55 to 150 _C ESD 2000 V Notes d. Pulse width limited by maximum junction temperature. e. Surface Mounted on FR4 Board. Apr. 2019 Rev .A 1/6 Drain LESHAN RADIO COMPANY, LTD. LSI1013LT1G , S-LSI1013LT1G SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = –250 mA –0.45 Typ Max Unit –1.3 V Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Forward Transconductancea Diode Forward Voltagea VDS = 0 V, VGS = "4.5 V "1 "2 mA VDS = –16 V, VGS = 0 V –0.3 –100 nA –5 VDS = –16 V, VGS = 0 V, TJ = 85_C VDS = –5 V, VGS = –4.5 V –700 mA mA VGS = –4.5 V, ID = –350 mA 0.8 1.2 VGS = –2.5 V, ID = –300 m A 1.2 1.6 VGS = –1.8 V, ID = –10 m A 1.8 2.7 gfs VDS = –10 V, ID = –250 mA 0.4 VSD IS = –150 mA, VGS = 0 V –0.8 W S –1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 450 Turn-On Delay Time td(on) 5 Rise Time Turn-Off Delay Time Fall Time tr td(off) tf 1500 VDS = –10 V, VGS = –4.5 V, ID = –250 mA VDD = –10 V, RL = 47 W ID ^ –200 mA, VGEN = –4.5 V, RG = 10 W 150 pC 9 35 ns 11 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Apr. 2019 Rev .A 2/6 LESHAN RADIO COMPANY, LTD. LSI1013LT1G , S-LSI1013LT1G TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. Output Characteristics Transfer Characteristics 1.0 1000 VGS = 5 thru 3 V TJ = –55_C 2.5 V 25_C 800 I D – Drain Current (mA) I D – Drain Current (A) 0.8 0.6 2V 0.4 1.8 V 0.2 600 125_C 400 200 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 VDS – Drain-to-Source Voltage (V) 1.0 2.5 3.0 Capacitance 120 4.0 100 3.2 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 2.0 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current VGS = 1.8 V 2.4 VGS = 2.5 V 1.6 VGS = 4.5 V Ciss 80 60 40 Coss 0.8 20 Crss 0 0.0 0 200 400 600 800 0 1000 4 ID – Drain Current (mA) Gate Charge 16 20 On-Resistance vs. Junction Temperature r DS(on) – On-Resistance ( W) (Normalized) 4 3 2 1 1.4 VGS = 4.5 V ID = 350 mA 1.2 VGS = 1.8 V ID = 150 mA 1.0 0.8 0.2 0.4 0.6 0.8 1.0 1.2 Qg – Total Gate Charge (nC) Apr. 2019 12 1.6 VDS = 10 V ID = 250 mA 0 0.0 8 VDS – Drain-to-Source Voltage (V) 5 V GS – Gate-to-Source Voltage (V) 1.5 1.4 1.6 0.6 –50 –25 0 25 50 75 100 TJ – Junction Temperature_( C) Rev .A 3/6 125 LESHAN RADIO COMPANY, LTD. LSI1013LT1G , S-LSI1013LT1G TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 5 TJ = 125_C r DS(on) – On-Resistance ( W ) IS – Source Current (mA) 1000 100 TJ = 25_C TJ = –55_C 10 1 0.0 4 3 ID = 350 mA 2 ID = 200 mA 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 VSD – Source-to-Drain Voltage (V) Threshold Voltage Variance vs. Temperature 3 4 5 6 IGSS vs. Temperature 0.3 3.0 0.2 2.5 ID = 0.25 mA 2.0 IGSS – (mA) 0.1 –0.0 1.5 –0.1 1.0 –0.2 0.5 –0.3 –50 –25 0 25 50 75 100 0.0 –50 125 VGS = 4.5 V –25 TJ – Temperature (_C) 0 25 50 75 100 125 TJ – Temperature (_C) BVGSS vs. Temperature BVGSS – Gate-to-Source Breakdown Voltage (V) V GS(th) Variance (V) 2 VGS – Gate-to-Source Voltage (V) 7 6 5 4 3 2 1 0 –50 –25 0 25 50 75 100 125 TJ – Temperature (_C) Apr. 2019 Rev .A 4/6 LESHAN RADIO COMPANY, LTD. LSI1013LT1G , S-LSI1013LT1G TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA =833_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 Apr. 2019 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Rev .A 5/6 LESHAN RADIO COMPANY, LTD. LSI1013LT1G , S-LSI1013LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 Apr. 2019 inches mm Rev .A 6/6