LSI1013XT1G

LSI1013XT1G S-LSI1013XT1G P-Channel 1.8-V (G-S) MOSFET SC89 1. FEATURES ● Fast Switching Speed: 14 ns ● High-Side Switching ● Gate to Source ESD Protected:2000V ● We declare that the material of product compliance with Gate RoHS requirements and Halogen Free. ● 1 S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 3 Drain qualified and PPAP capable. Source 2 2. APPLICATIONS ● Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories ● Battery Operated Systems ● Power Supply Converter Circuits ● Load/Power Switching Cell Phones, Pagers (Top View) B 3. DEVICE MARKING AND RESISTOR VALUES Device Marking Shipping LSI1013XT1G B 3000/Tape&Reel 1 M 3 2 B = Specific Device Code M = Month Code 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Drain−to−Source Voltage VDSS Gate−to−Source Voltage VGS TA = 25℃ Continuous Drain Current (Note 1) TA = 85℃ Pulsed Drain Current (Note 1) ID 5 secs -400 IS TA = 25℃ Power Dissipation (Note 2) TA = 85℃ PD -350 -300 IDM Continuous Source Current Steady State Unit V V ±6 -20 -275 -1000 -275 275 -250 250 160 140 Operating Junction and Storage Temperature Tj,Tstg -55~+150 Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 mA mW ℃ V 1.Pulse width limited by maximum junction temperature. 2.Surface Mounted on FR4 Board. Leshan Radio Company, LTD. Rev.C Dec. 2020 1/6 LSI1013XT1G,S-LSI1013XT1G P-Channel 1.8-V (G-S) MOSFET 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Drain–Source Breakdown Voltage (VGS = 0, ID = -250μA) Symbol Min. Typ. Max. Unit VBRDSS -20 - - V IDSS - -0.3 -100 nA - - -5 µA IGSS - ±1 ±2 μA VGS(th) -0.45 - -1.3 V - 0.8 1.2 - 1.2 1.6 - 1.8 2.7 VSD - -0.8 -1.2 Qg - 1500 - Qgs - 150 - Zero Gate Voltage Drain Current (VDS = –16 V, VGS = 0 V) (VDS = –16 V, VGS = 0 V, TJ = 85℃) Gate−to−Source Leakage Current (VDS = 0 V, VGS = ±4.5 V) Gate Threshold Voltage (VDS = VGS , ID = –250µA) Drain−to−Source On Resistance (VGS = –4.5 V, ID = –350 mA) RDS(on) (VGS = –2.5 V, ID = –300 m A) (VGS = –1.8 V, ID = –10 m A) Diode Forward Voltage (IS = –150 mA, VGS = 0 V) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time (VDS=–10 V,VGS= –4.5 V,ID=–250 mA) (VDD = –10 V, RL = 47 Ω,ID=–200 mA, VGEN = –4.5 V, RG = 10Ω) Qgd - 450 - td(ON) - 5 - tr - 9 - td(OFF) - 35 - tf - 11 - Ω V pC ns 3. Pulse Test: pulse width ≤300 µs, duty cycle ≤ 2%. Leshan Radio Company, LTD. Rev.C Dec. 2020 2/6 LSI1013XT1G,S-LSI1013XT1G P-Channel 1.8-V (G-S) MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES 1.0 0.9 0.8 VGS = 3V VGS = 5V 0.8 VDS=10V 0.7 0.7 ID Drain Current(A) ID Drain Current(A) 0.9 VGS = 2.5V VGS = 2V 0.6 0.5 VGS = 1.8V 0.4 0.3 0.6 0.5 0.4 25℃ 0.3 0.2 0.2 0.1 0.1 0.0 0.0 0 1 2 3 4 VDS Drain to Source Voltage(V) 150℃ 0.0 5 0.5 -55℃ 1.0 1.5 2.0 VGS Gate to Source Voltage(V) ON-Region Characteristics Transfer Characteristcs 2.5 4.0 3.5 VGS=1.8V,ID=0.2A 2.0 VGS =1.8V 2.5 RDS(on)(Ω) RDS(on)(Ω) 3.0 2.0 1.5 1.5 VGS=2.5V,ID=0.2A 1.0 VGS =2.5V 1.0 VGS=4.5V,ID=0.2A 0.5 0.5 0.0 0.0 VGS =4.5V 0.2 0.4 0.6 0.8 1.0 0.0 -55 -5 45 ID Drain Current(A) TJ Temperature(℃) RDS(on) vs. ID RDS(on) vs. Tj Leshan Radio Company, LTD. Rev.C Dec. 2020 95 145 3/6 LSI1013XT1G,S-LSI1013XT1G P-Channel 1.8-V (G-S) MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 8 10 9 ID=0.2A 7 ID=0.35A 8 6 7 4 RDS(on)(Ω) RDS(on)(Ω) 5 25℃ 3 6 5 25℃ 4 3 2 2 150℃ 1 -55℃ 0 1 2 3 150℃ 1 -55℃ 0 4 5 1 6 VGS Gate to Source Voltage(V) 3 4 5 VGS Gate to Source Voltage(V) 6 RDS(on) vs. VGS RDS(on) vs. VGS 1 1.0 0.9 -55℃ IS Diode Forward Current(A) 0.8 VTH Threshold Voltage(V) 2 25℃ 0.7 0.6 0.5 150℃ 0.4 0.3 0.1 150℃ 0.01 25℃ -55℃ 0.001 0.2 0.1 0.05 0.06 0.07 0.08 0.09 0.1 0.0001 0.1 ID Drain Current(mA) 0.3 0.5 0.7 0.9 VSD Diode Forward Voltage(V) VTH vs. ID IS vs.VSD Leshan Radio Company, LTD. Rev.C Dec. 2020 1.1 4/6 LSI1013XT1G,S-LSI1013XT1G P-Channel 1.8-V (G-S) MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 70 60 Capacitor(pF) 50 Ciss 40 30 20 Coss 10 Crss 0 0 5 10 15 20 VDS Drain to Source Voltage(V) Capacitance Leshan Radio Company, LTD. Rev.C Dec. 2020 5/6 LSI1013XT1G,S-LSI1013XT1G P-Channel 1.8-V (G-S) MOSFET 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 1.50 NOM MAX MIN NOM MAX 1.60 1.70 0.059 0.063 0.067 B 0.75 0.85 0.95 0.030 0.034 0.040 C 0.60 0.70 0.80 0.024 0.028 0.031 D 0.23 0.28 0.33 0.009 0.011 0.013 G 0.50BSC 0.020BSC H 0.53REF 0.021REF J 0.10 0.15 0.20 0.004 0.006 0.008 K 0.30 0.40 0.50 0.012 0.016 L 1.10REF 0.02 0.043REF M --- --- 10° --- --- 10° N --- --- 10° --- --- 10° S 1.50 1.60 1.70 0.059 0.063 0.067 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.C Dec. 2020 6/6 DISCLAIMER ● Before you use our Products, you are requested to carefully read this document and fully understand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales representative.