LTVS16D15H11T5G

LESHAN RADIO COMPANY, LTD. LTVS16D15H11T5G-HW LTVS16D15H11T5G-HW The TVS16D15 is an uni-directional TVS diode, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive data and power line. The ESD16D15 complies with the IEC 61000-4-2 (ESD) standard with ±15kV air and ±8kV contact discharge. It is assembled into an ultra-small 1.6x1.0x0.5mm lead-free DFN package. The small size and high ESD surge protection make ESD16D15 an ideal choice to protect cell phone, digital cameras, audio players and many other portable applications. CATHODE MARKING DIAGRAM       Ultra small package: 1.6x1.0x0.5mm Protects one data or power line Ultra low leakage: nA level Low clamping voltage 2-pin leadless package Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 80A (5/50ns) – IEC61000-4-5 (Lightning) 60A (8/20μs) 72 DFN1610-2 Features  ANODE 72 M M 1- Line Uni- directional TVS Diode = Specific Device Code = Month Code Ordering information Device LTVS16D15H11T5G-HW Marking 72 Shipping 8000/Tape&Reel RoHS Compliant Applications      Mobile Phones Battery Protection Power Line Protection Vbat pin for Mobile Devices Hand Held Portable Applications Mechanical Characteristics      Package: DFN1610-2 Lead Finish: NiPdAu Case Material: “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 3 per J-STD-020 Rev.A 1/4 LESHAN RADIO COMPANY, LTD. LTVS16D15H11T5G-HW Absolute Maximum Ratings (T A=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 1500 W Peak Pulse Current (8/20µs) Ipp 60 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range kV ±30 TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (T A=25°C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol Min VRWM 11 VBR 12.5 Typ 14.5 Max Unit Test Condition 12 V 15.5 V IT = 1mA 50 nA VRWM = 12V 1.2 V IF = 10mA Reverse Leakage Current IR Forward Voltage VF Clamping Voltage VC 18.5 V IPP = 10A (8 x 20µs pulse) Clamping Voltage VC 25 V IPP = 60A (8 x 20µs pulse) Junction Capacitance CJ pF VR = 0V, f = 1MHz 1.0 250 Rev.A 2/4 LESHAN RADIO COMPANY, LTD. LTVS16D15H11T5G-HW Typical Performance Characteristics (T A=25°C unless otherwise Specified) 10 250 Peak Power_Ppp(W) Junction Capacitance_Cj (pF) 300 200 150 100 50 0 1 0.1 0.01 0 3 6 9 Reverse Voltage_VR (V) 12 0.1 25 120 20 100 15 10 5 100 Fig2.Peak Pulse Power vs. Pulse Time % of Rated Power Clamping Voltage_Vc (V) Fig1.Junction Capacitance vs. Reverse Voltage 1 10 Pulse Duration_tp(uS) 80 60 40 20 0 0 0 20 40 60 Peak Pulse Current_Ipp (A) 80 Fig 3 .Clamping Voltage vs. Peak Pulse Current 0 25 50 75 100 125 Ambient Temperature_Ta(℃) 150 Fig4.Power Derating Curve 100 % of Peak Pulse Current 90 80 70 60 50 40 30 20 10 0 0 20 40 Time_t(uS) 60 80 Fig 5. 8 X 20uS Pulse Waveform Fig 6. ESD Clamping Voltage 8 kV Contact per IEC61000−4−2 Rev.A 3/4 LESHAN RADIO COMPANY, LTD. LTVS16D15H11T5G-HW DFN1610-2 DFN1610-2 Package Outline Drawing A DIMENSIONS MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX 0.45 0.50 0.55 0.018 0.020 0.022 A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.75 0.80 0.85 0.030 0.032 0.034 c 0.10 0.15 0.20 0.004 0.006 0.008 D 1.55 1.60 1.65 0.062 0.064 0.066 e D SYM h h - b E - L c A Bottom View A1 e 1.10 BSC 0.044 BSC E 0.95 1.00 1.05 0.038 0.040 0.042 L 0.35 0.40 0.45 0.014 0.016 0.018 h 0.15 0.20 0.25 0.006 0.008 0.010 Suggested Land Pattern SYM ╋ Y3 Y2 ╋ MILLIMETERS INCHES X 1.00 0.040 Y1 0.62 0.025 Y2 0.60 0.024 Y3 1.22 0.049 Z 1.85 0.074 Y1 Z DIMENSIONS X Rev.A 4/4