LTVS16H10T5G

LESHAN RADIO COMPANY, LTD. LTVS16H10T5G The TVS16H is an uni-directional TVS diode, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive data and power line. The TVS16H complies with the IEC 61000-4-2 (ESD) standard with ±30kV air and ±30kV contact discharge. It is assembled into an ultra-small 1.6x1.0x0.5mm lead-free DFN package. The small size and high ESD surge protection make TVS16H an ideal choice to protect cell phone, digital cameras, audio players and many other portable applications. Features       Ultra small package: 1.6x1.0x0.5mm Protects one data or power line Low clamping voltage 2-pin leadless package Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 90A (5/50ns) – IEC61000-4-5 (Lightning) 90A (8/20μs) RoHS Compliant LTVS16H10T5G CATHODE ANODE MARKING DIAGRAM DFN1610 10 M 1-Line Uni-directional TVS Diode cathode 10 M = Specific Device Code = Month Code Ordering information Device Shipping LTVS16H10T5G 8000/Tape&Reel Applications      Mobile Phones Battery Protection Power Line Protection Vbat pin for Mobile Devices Hand Held Portable Applications Mechanical Characteristics    Package: DFN1610-2 Case Material: “Green” Molding Compound. Moisture Sensitivity: Level 1 per J-STD-020 Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LTVS16H10T5G Absolute Maximum Ratings (T A=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 1800 W Peak Pulse Current (8/20µs) Ipp 90 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range kV ±30 TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (T A=25°C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol VBR IR Forward Voltage VF Junction Capacitance Typ VRWM Reverse Leakage Current Clamping Voltage Min 12.5 13.5 1.0 VC CJ 500 Max Unit Test Condition 10 V 15.5 V IR = 1mA 0.5 μA VR = 10V 1.2 V IF = 10mA 16.4 V IPP = 30A (8 x 20µs pulse) 19 V IPP = 60A 22 V IPP = 90A (8 x 20µs pulse) 600 pF VR = 0V, f = 1MHz Rev.O 2/4 LESHAN RADIO COMPANY, LTD. LTVS16H10T5G Typical Performance Characteristics (T A=25°C unless otherwise Specified) 100 90 % of Peak Pulse Current 250 200 150 100 50 80 70 60 50 40 30 20 10 0 0 0 3 6 9 Reverse Voltage_VR (V) 12 0 Fig1.Junction Capacitance vs. Reverse Voltage 20 40 Time_t(uS) 60 80 Fig 2. 8 X 20uS Pulse Waveform 120 25 100 20 % of Rated Power Clamping Voltage_Vc (V) Junction Capacitance_Cj (pF) 300 15 10 5 80 60 40 20 0 0 0 20 40 60 80 100 Peak Pulse Current_Ipp Fig 3 .Clamping Voltage vs. Peak Pulse Current 0 25 50 75 100 125 Ambient Temperature_Ta(℃) Fig4.Power Derating Curve Rev.O 3/4 150 LESHAN RADIO COMPANY, LTD. LTVS16H10T5G OUTLINE AND DIMENSIONS DFN1610 DIM MIN NOR MAX A 0.46 0.51 0.56 A1 0.01 0.03 0.05 b 0.75 0.80 0.85 b1 0.25 0.30 0.35 D 1.55 1.60 1.65 E 0.95 1.00 1.05 e 1.10BSC L 0.35 0.40 0.45 A3 0.127REF. All Dimensions in mm SOLDERING FOOTPRINT DFN1610 DIM (mm) X 0.62 Y 1.00 L 1.84 e 1.22 K 0.60 Rev.O 4/4