MMBD2837LT1

LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes ANODE 1 3 CATHODE 2 ANODE MMBD2837LT1 MMBD2838LT1 3 MAXIMUM RATINGS(EACH DIODE) Rating Peak Reverse Voltage D.C Reverse Voltage Peak Forward Current Average Rectified Current Symbol V RM VR I FM IO Value 75 30 50 450 300 150 100 Unit Vdc Vdc mAdc mAdc 1 2 MMBD2837LT1 MMBD2838LT1 CASE 318–08, STYLE 9 SOT– 23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C R θ JA PD R θ JA T J , T stg DEVICE MARKING MMBD2837LT1 = A5; MMBD2838LT1 = MA6 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) ( EACH DIODE ) C haracteristic Symbol V (BR) IR MMBD2837LT1 MMBD2838LT1 — — — — — Min 35 75 — — Max — — µ Adc 0.1 0.1 4.0 1.0 1.0 1.2 4.0 pF Vdc Unit Vdc OFF CHARACTERISTICS Reverse Breakdown Voltage(I (BR) = 100µAdc) MMBD2837LT1 MMBD2838LT1 Reverse Voltage Leakage Current (V R = 30 Vdc) (V R = 50 Vdc) Diode Capacitance CT (V R = 0 V, f = 1.0 MHz) Forward Voltage(I F = 10 mAdc) VF (I F = 50 mAdc) (I F = 100 mAdc) Reverse Recovery Time(I F=I R=10mAdc,I R(REC)=1.0mAdc)(Figure 1) t rr 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. ns G21–1/2 LESHAN RADIO COMPANY, LTD. MMBD2837LT1 MMBD2838LT1 +10 V 820 Ω 2.0 k 0.1µF tr tp 10% t IF t rr t 100 µH IF 0.1 µF 50 Ω OUTPUT PULSE GENERATOR DUT 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% i R(REC) = 1.0 mA INPUT SIGNAL V R IR OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p » t rr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH CATHODE 100 10 I F , FORWARD CURRENT (mA) T A = 85°C 10 I R, REVERSE CURRENT ( µA) T A =150°C T A =125°C 1.0 T A= –40°C T A =85°C 0.1 T A = 25°C 1.0 T A =55°C 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0 10 T A =25°C 20 30 40 50 V F , FORWARD VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 1.0 C D , DIODE CAPACITANCE (pF) 0.9 0.8 0.7 0.6 0 2.0 4.0 6.0 8.0 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance G21–2/2