MMBD301LT1

LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital applications.They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements.They are also available in a Surface Mount package. MMBD301LT1 30 VOLTS SILICON HOT–CARRIER DETECTOR AND SWITCHING DIODES • EXtremely Low Minority Carrier Lifetime –15ps(Typ) • very Low Capacitance –1.5pF(Max)@VR=15V • CLow Reverse Leakage –IR=13 nAdc(Typ)MBD301,MMBD301 1 2 3 3 CATHODE 1 ANODE CASE 318–08, STYLE 6 SOT– 23 (TO–236AB) MAXIMUM RATINGS(TJ=125°C unless otherwise noted) MBD301 MMBD301LT1 Rating symbol value unit Reverse Voltage VR 30 Volts Forward Power Dissipation PF @TA=25 °C 280 200 mW Derate above 25 °C 2.8 2.0 mW/ °C Operating Junction TJ °C Temperature Range –55 to +125 Storage Temperature Range T stg –55 to +150 °C DEVICE MARKING MMBD301LT1=4T ELECTRICAL CHARACTERISTICS(T A=25 °C unless otherwise noted) Characteristic Symbol Min Typ Reverse Breakdown Voltage(IR=10µA) Total Capacitance(VR=15V,f=1.0MHz,)Figure1 Reverse Leakage(VR=25V)Figure3 Forward Voltage(IF=1.0mAdc)Figure4 Forward Voltage(IF=10mAdc)Figure4 V (BR)R CT IR V V F F Max — 1.5 200 0.45 0.6 Unit Volts pF 30 — — — — — 0.9 13 0.38 0.52 n Adc Vdc Vdc NOTE:MMBD301LT1 is also available in bulk packaging.Use MMBD301L as the device title to order this device in bulk. G16–1/2 LESHAN RADIO COMPANY, LTD. MMBD301LT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.8 f =1.0MHz 2.4 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 9.0 12 15 18 21 24 27 30 τ , MINORITY CARRIER LIFETIME (ps) 500 C T , TOTAL CAPACITANCE (pF) 400 KRAKAUER METHOD 300 200 100 0 0 10 20 30 40 50 60 70 80 90 100 V R , REVERSE VOLTAGE (VOLTS) I F , FORWARD CURRENT (mA) Figure 1. Total Capacitance 10 100 Figure 2. Minority Carrier Lifetime I R, REVERSE LEAKAGE ( µA) T A = 100°C 1.0 I F , FORWARD CURRENT (mA) 10 75°C 0.1 T A = 85°C T A= –40°C 1.0 0.01 25°C T A = 25°C 0.001 0 6.0 12 18 24 30 0.1 0.2 0.4 0.6 0.8 1.0 1.2 V R , REVERSE VOLTAGE (VOLTS) V F , FORWARD VOLTAGE (VOLTS) Figure 3. Reverse Leakage Figure 4. Forward Voltage I F(PEAK) CAPACITIVE CONDUCTION I R(PEAK) FORWARD CONDUCTION STORAGE CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) DUT PADS SAMPLING OSCILLOSCOPE (50 Ω INPUT) Figure 5. Krakauer Method of Measuring Lifetime G16–2/2