MMBD352WT1

LESHAN RADIO COMPANY, LTD. Dual Schottky Barrier Diode MMBD352WT1 3 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA 1 2 CASE 419–02 , STYLE 9 SOT–323 / SC – 70 1 ANODE CATHODE 3 CATHODE/ANODE 2 MAXIMUM RATINGS Rating Symbol VR Value 7.0 Unit VCC Continuous Reverse Voltage THERMAL CHARACTERISTICS Characteristic Symbol (1) Max 200 1.6 625 300 2.4 417 Unit mW mW/°C °C/W mW mW/°C °C/W °C Total Device Dissipation FR– 5 Board TA = 25°C Derate above 25° Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient PD RθJA PD RθJA –55 to +150 Junction and Storage Temperature TJ, Tstg DEVICE MARKING MMBD352WT1 = M5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Forward Voltage (IF = 10 mAdc) Reverse Voltage Leakage Current (VR = 3.0 V) (VR = 7.0 V) Capacitance (VR = 0 V, f = 1.0 MHz) 1. FR–5 = 1.0 × 0.75 × 0.062 in. 2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina. Symbol VF IR — — — Min — Max 0.60 Unit V µA C 0.25 10 1.0 pF MMBD352WT1–1/2 LESHAN RADIO COMPANY, LTD. MMBD352WT1 TYPICAL CHARACTERISTICS 100 I F, FORWARD CURRENT (mA) 1.0 10 TA = –40°C C, CAPACITANCE (pF) 0.8 TA = 85°C 0.9 0.8 1.0 TA = 25°C 0.7 0.1 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (VOLTS) 0.6 0 1.0 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Forward Voltage Figure 2. Capacitance MMBD352WT1–2/2