MMBT2222AWT1

LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications. 1 BASE 3 COLLECTOR MMBT2222AWT1 3 1 2 2 EMITTER CASE 419–02, STYLE 3 SOT–323 /SC – 70 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO Value 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, TA = 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD RθJA TJ , Tstg Max 150 833 –55 to +150 Unit mW °C/W °C DEVICE MARKING MMBT2222AWT1 = 1P ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (1) (I C = 1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = 10 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Base Cutoff Current (V CE = 60 Vdc, V EB = 3.0 Vdc) Collector Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) CE EB V (BR)CEO V (BR)CBO V (BR)EBO 40 75 6.0 — — — — — 20 10 Vdc Vdc Vdc nAdc nAdc I BL I CEX 1. Pulse Test: Pulse Width