MMBT2222LT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon 3 COLLECTOR 1 BASE MMBT2222LT1 MMBT2222ALT1 3 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO 2 EMITTER 1 2 2222 30 60 5.0 600 2222A 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C RθJA PD RθJA TJ , Tstg DEVICE MARKING MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P; ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 10 mAdc, I B = 0) Collector–Base Breakdown Voltage MMBT2222 MMBT2222A MMBT2222 V (BR)CBO V (BR)EBO I CEX I CBO –– –– –– –– I EBO I BL — — 0.01 0.01 10 10 100 20 nAdc nAdc V (BR)CEO 30 40 60 75 5.0 6.0 — — –– — — –– 10 Vdc Vdc nAdc µAdc Vdc (I C = 10 µAdc, I E = 0) MMBT2222A Emitter–Base Breakdown Voltage MMBT2222 (I E = 10 µAdc, I C = 0) MMBT2222A Collector Cutoff Current MMBT2222A ( V CE = 60 Vdc, I EB(off) = 3.0Vdc) Collector Cutoff Current (V CB = 50 Vdc, I E = 0) MMBT2222 (V CB = 60 Vdc, I E = 0) MMBT2222A (V CB = 50 Vdc, I E = 0, T A = 125°C) MMBT2222 (V CB = 60 Vdc, I E = 0, T A = 125°C) MMBT2222A Emitter Cutoff Current (V EB = 3.0 Vdc, I C = 0) MMBT2222A Base Cutoff Current (V CE = 60 Vdc, V EB(off) = 3.0 Vdc) MMBT2222A 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. O4–1/5 LESHAN RADIO COMPANY, LTD. MMBT2222LT1 MMBT2222ALT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE 35 50 75 35 100 50 30 40 VCE(sat) MMBT2222 MMBT2222A MMBT2222 MMBT2222A V BE(sat) MMBT2222 MMBT2222A MMBT2222 MMBT2222A –– 0.6 –– –– fT C obo C ibo h ie h re h fe h oe 250 300 –– –– –– 2.0 0.25 –— 50 75 5.0 25 –– –– 1.3 1.2 2.6 2.0 –– –– 8.0 30 25 8.0 1.25 8.0 4.0 300 375 35 200 150 4.0 MHz pF pF kΩ X 10 — µmhos –4 Min Max Unit –– ON CHARACTERISTICS DC Current Gain (I C = 0.1 mAdc, V CE = 10 Vdc) (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc,T A= –55°C ) (I C = 150 mAdc, V CE = 10 Vdc) (3) (I C = 150 mAdc, V CE = 1.0 Vdc) (3) (I C = 500 mAdc, V CE = 10 Vdc)(3) Collector–Emitter Saturation Voltage(3) (I C = 150 mAdc, I B = 15 mAdc) (I C = 500mAdc, I B = 50 mAdc) Base–Emitter Saturation Voltage (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) –– –– — — 300 –– –– — Vdc –– –– –– –– 0.4 0.3 1.6 1.0 Vdc MMBT2222A only MMBT2222 MMBT2222A SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(4) (I C = 20mAdc, V CE= 20Vdc, f = 100MHz) Output Capacitance(V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Voltage Feedback Ratio(V CE=10 Vdc, I C= 1.0mAdc, f =1.0kHz) (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Small–Signal Current Gain(VCE=10Vdc,I C=1.0mAdc, f=1.0kHz) (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Output Admittance(V CE=10 Vdc, I C = 1.0 mAdc,f =1.0 kHz) (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Curren Base Time Comstant (V CB= 20 Vdc, I E = 20 mAdc, f = 31.8 MHz) Noise Figure(VCE=10Vdc, IC=100µAdc, RS=1.0kΩ, f =1.0kHz) MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A rb, C C NF ps dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 30 Vdc, V EB(off) = – 0.5 Vdc I C = 150 mAdc, I B1 = 15 mAdc) (V CC = 30 Vdc, I C = 150 mAdc I B1 = I B2 = 15 mAdc) td tr ts tf — — — — 10 25 225 60 ns ns 3. Pulse Test: Pulse Width