MMBT2484LT1

LESHAN RADIO COMPANY, LTD. Low Noise Transistor NPN Silicon MMBT2484LT1 3 COLLECTOR 1 BASE 1 2 3 2 EMITTER MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO CASE 318–08, STYLE 6 Value 60 60 6.0 50 Unit Vdc Vdc Vdc mAdc SOT–23 (TO–236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C RθJA PD RθJA TJ , Tstg DEVICE MARKING MMBT2484LT1 = 1U ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 10 mAdc, I B = 0) Collector–Emitter Breakdown Voltage (I C = 10 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector Cutoff Current( V CB = 45Vdc, I E = 0) ( V CB = 45Vdc, I E = 0, T A=150 °C) Emitter Cutoff Current ( V EB =5.0 Vdc, I C = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. I CBO I EBO — — — 10 10 10 nAdc µAdc nAdc V (BR)EBO V (BR)CEO V (BR)CBO 60 60 5.0 — — — Vdc Vdc Vdc O7–1/4 LESHAN RADIO COMPANY, LTD. MMBT2484LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE 250 –– VCE(sat) –– V BE(on) Min Max Unit –– ON CHARACTERISTICS DC Current Gain (I C = 1.0 mAdc, V CE = 5.0 Vdc) (I C = 10 mAdc, V CE = 5.0Vdc) Collector–Emitter Saturation Voltage (I C = 1.0 mAdc, I B = 1.0 mAdc) Base–Emitter On Voltage (I C = 1.0 mAdc, I CE = 5.0 mAdc) –– 800 Vdc 0.35 Vdc –– 0.95 SMALL–SIGNAL CHARACTERISTICS Output Capacitance (V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance C obo –– –– –– 6.0 6.0 3.0 pF pF dB C ibo (V EB=0.5 Vdc, I C = 0 , f = 1.0 MHz) Noise Finure NF (V CE=5.0 Vdc, I C = 10 µAdc , R S =10 kΩ, f = 1.0 MHz, BW =200 Hz) RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model O7–2/4 LESHAN RADIO COMPANY, LTD. MMBT2484LT1 NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25°C) NOISE VOLTAGE 30 30 BANDWIDTH = 1.0 Hz 20 20 BANDWIDTH = 1.0 Hz e n , NOISE VOLTAGE (nV) 10 7.0 5.0 3.0 mA 1.0 mA e n , NOISE VOLTAGE (nV) I C=10 mA ~ RS~ 0 RS ~ 0 ~ f = 10 Hz 100 Hz 7.0 10 1.0 kHz 5.0 10 kHz 300µA 3.0 10 20 50 100 200 500 1 k 2k 5 k 10 k 20 k 50 k 100 k 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 100 kHz 5.0 10 f, FREQUENCY (Hz) I C , COLLECTOR CURRENT (mA) Figure 2. Effects of Frequency 10 7.0 5.0 20 Figure 3. Effects of Collector Current BANDWIDTH = 1.0 Hz NF, NOISE FIGURE (dB) I n , NOISE CURRENT (pA) I C = 10 mA 3.0 mA 1.0 mA 300 µA 100 µA 10 µA 50 100 200 500 1 k 2k 16 3.0 2.0 1.0 0.7 0.5 0.3 0.2 BANDWIDTH = 10 Hz to 15.7 kHz 12 I C = 1.0 mA 8.0 500 mA 100 mA 4.0 10 mA RS ~ 0 ~ 0.1 10 20 30 µA 0 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) R S , SOURCE RESISTANCE (OHMS) Figure 4. Noise Current Figure 5. Wideband Noise Figure 100 Hz NOISE DATA 10 20 V T , TOTAL NOISE VOLTAGE (nV) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 BANDWIDTH = 1.0 Hz 300 µA 100 µA 30 µA 10 µA I C = 10 mA 16 NF, NOISE FIGURE (dB) I C = 10 mA 3.0 mA 1.0 mA 12 300 µA 8.0 3.0 µA 1.0 µA 100 µA 4.0 30 µA BANDWIDTH = 1.0 Hz 10 µA 0 20 50 100 200 500 1 k 2k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2k 5 k 10 k 20 k 50 k 100 k R S , SOURCE RESISTANCE (OHMS) R S , SOURCE RESISTANCE (OHMS) Figure 6. Total Noise Voltage Figure 7. Noise Figure O7–3/4 LESHAN RADIO COMPANY, LTD. MMBT2484LT1 h FE , DC CURRENT GAIN (NORMALIZED) 4.0 3.0 V CE = 5.0 V 2.0 T A = 125°C 25°C 1.0 –55°C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I C , COLLECTOR CURRENT (mA) Figure 8. DC Current Gain RθVBE , BASE– EMITTER TEMPERATURE COEFFICIENT (mV/ °C) 1.0 –0.4 T J = 25°C 0.8 –0.8 V, VOLTAGE (VOLTS) 0.6 V BE@ V CE= 5.0 V –1.2 0.4 –1.6 TJ = 25°C to125°C 0.2 –2.0 –55°C to 25°C –2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 VCE(sat) @I C/I B=10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 9. “On” Voltages Figure 10. Temperature Coefficients f T , CURRENT– GAIN — BANDWIDTH PRODUCT (MHz) 8.0 6.0 500 T J = 25°C C ob C eb C ib 300 C, CAPACITANCE (pF) 4.0 3.0 200 C cb 2.0 1.00 70 50 1.0 V CE = 5.0 V T J = 25°C 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 0.8 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current–Gain — Bandwidth Product O7–4/4