MMBT2907ALT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon 3 COLLECTOR 1 BASE MMBT2907LT1 MMBT2907ALT1 3 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V V V CEO CBO EBO 2 EMITTER Value 2907 2907A –40 –60 –5.0 –600 –60 Unit Vdc Vdc Vdc mAdc 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C RθJA PD RθJA TJ , Tstg DEVICE MARKING MMBT2907LT1 = M2B, MMBT2907ALT1 = 2F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) MMBT2907 MMBT2907A Collector–Emitter Breakdown Voltage(I C = –10 µAdc, I E = 0) Emitter–Base Breakdown Voltage(I E = –10 µAdc, I C = 0) Collector Cutoff Current( V CB = –30Vdc, I BE(OFF) = –0.5Vdc) Collector Cutoff Current ( V CB = –50Vdc, I E = 0) MMBT2907 MMBT2907A ( V CB = –50Vdc, I E = 0, T A =125°C ) MMBT2907 MMBT2907A IB (I C = –10 mAdc, I B = 0) V (BR)CEO Vdc –40 –60 –60 –5.0 — — — — — — — — — — –50 –0.020 –0.010 –20 –10 –50 V (BR)CBO V (BR)EBO I CEX I CBO Vdc Vdc nAdc µAdc Base Current( V CE = –30Vdc, V EB(off)= –0.5Vdc ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. nAdc O8–1/4 LESHAN RADIO COMPANY, LTD. MMBT2907LT1 MMBT2907ALT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A VCE(sat) –– –– V BE(sat) Min Max Unit –– ON CHARACTERISTICS DC Current Gain (I C = –0.1mAdc, V CE = –10 Vdc) (I C =–1.0mAdc, V CE = –10 Vdc) (I C = –10 mAdc, V CE = –10Vdc) (I C = –150mAdc, V CE =–10 Vdc)(3) (I C = –500mAdc, V CE =–10 Vdc)(3) Collector–Emitter Saturation Voltage(3) (I C = –150mAdc, I B = –15 mAdc) (I C = –500 mAdc, I B = –50 mAdc) Base–Emitter Saturation Voltage(3) (I C = –150mAdc, I B = –15 mAdc) (I C = –500mAdc, I B = –50 mAdc) 35 75 50 100 75 100 –– 100 30 50 –– –– –– –– –– –– –– 300 –– –– Vdc –0.4 –1.6 Vdc –– –– –1.3 –2.6 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(3),(4) (I C = –50mAdc, V CE= –20Vdc, f = 100MHz) Output Capacitance (V CB = –10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = –2.0Vdc, I C = 0, f = 1.0 MHz) f T 200 –– obo –– 8.0 30 MHz pF pF C C ibo –– SWITCHING CHARACTERISTICS Turn–On Time Delay Time Rise Time Fall Time Storage Time Turn–Off Time (V CC = –30 Vdc, I C = –150 mAdc, I B1 = –15 mAdc) (V CC = –6.0 Vdc, I C = –150 mAdc,I B1 = I B2 = 15 mAdc) t on td tr tf ts t off — — — — — — 45 10 40 30 80 100 ns ns 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. 4. f T is defined as the frequency at which |h f e | extrapolates to unity. INPUT Z o = 50 Ω PRF = 150 PPS RISE TIME