MMBT3640LT1

LESHAN RADIO COMPANY, LTD. Switching Transistor PNP Silicon 3 COLLECTOR MMBT3640LT1 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO 1 2 Value –12 –12 –4.0 –80 Unit Vdc Vdc Vdc mAdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C RθJA PD RθJA TJ , Tstg DEVICE MARKING MMBT3640LT1 = 2J ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –100 µAdc, V BE = 0) Collector–Emitter Sustaining Voltage(1 ) (I C = –10 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –100 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –100 µAdc, I C = 0) Collector Cutoff Current ( V CE = –6.0Vdc, V BE = 0) ( V CE = –6.0Vdc, V BE = 0, T A= 65°C) Base Current Current ( V CE = –6.0Vdc, V EB = 0 ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CES V V V –12 –12 –12 –4.0 –– — –– — Vdc Vdc Vdc Vdc µAdc — — — –0.01 –1.0 –10 CEO(sus) (BR)CBO (BR)EBO I CES IB nAdc O10–1/3 LESHAN RADIO COMPANY, LTD. MMBT3640LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE 30 20 VCE(sat) –– –– –– V BE(sat) Min Max Unit –– ON CHARACTERISTICS DC Current Gain (I C = –10mAdc, V CE = –0.3 Vdc) (I C = –50mAdc, V CE = –1.0 Vdc) Collector–Emitter Saturation Voltage (I C = –10mAdc, I B = –1.0 mAdc) (I C = –50 mAdc, I B = –5.0 mAdc) (I C = –10 mAdc, I B = –1.0 mAdc, T A=65°C ) Base–Emitter Saturation Voltage (I C = –10mAdc, I B = –0.5 mAdc) (I C = –10mAdc, I B = –1.0 mAdc) (I C = –50mAdc, I B = –5.0 mAdc) 120 –– Vdc –0.2 –0.6 –0.25 Vdc –0.75 –0.8 –– –0.95 –1.0 –1.5 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(3),(4) (I C = –10mAdc, V CE= –5.0Vdc, f = 100MHz) Output Capacitance (V CB = –5.0Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = –0.5Vdc, I C = 0, f = 1.0 MHz) fT C obo C ibo 500 –– –– –– 3.5 3.5 MHz pF pF SWITCHING CHARACTERISTICS Delay Time (V CC = –6.0 Vdc,V EB(off)=–1.9Vdc, Rise Time I C = –50 mAdc, I B1 = –5.0 mAdc) Storage Time (V CC = –6.0 Vdc, Fall Time I C = –50 mAdc,I B1 = I B2 = –5.0 mAdc) Turn–On Time (V CC = –6.0 Vdc, I C = –50 mAdc, V EB(off)=–1.9Vdc,I B1 = –5.0 mAdc) (V CC = –1.5 Vdc, I C = –10 mAdc, I B1 = –5.0 mAdc) Turn–Off Time (V CC = –6.0 Vdc, I C = –50 mAdc, V EB(off)=–1.9Vdc, I B1 = I B2 = –5.0 mAdc) (V CC = –1.5 Vdc, I C = –10 mAdc, I B1 = I B2 = –0.5 mAdc) 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. td tr ts tf t on — — — — — — t off — — 35 75 10 30 20 12 25 60 ns ns ns ns ns ns V BB = –6.0 V V BB = +1.9 V V CC= –6.0 V 1.0 k 0.1 µF 0 –6.8 V V in 680 TO SAMPLING SCOPE INPUT Z > 100 k RISE TIME < 1.0 ns 110 V out 0 5.0 V 0.1 mF V in 51 PULSE SOURCE RISE TIME < 1.0 ns PULSE WIDTH > 200 ns Z in = 50 OHMS FALL TIME < 1.0 ns 5.0 k 5.0 k V CC = 1.5 V 130 V out 51 PULSE SOURCE RISE TIME < 1.0 ns PULSE WIDTH >100 ns NOTES: Collector Current = 50 mA, NOTES: Turn–On and Turn–Off Time Z in = 50 OHMS NOTES: Base Currents = 5.0 mA. FALL TIME < 1.0 ns Figure 1. TO SAMPLING SCOPE INPUT Z >100 k RISE TIME < 1.0 ns NOTES: Collector Current = 10 mA, NOTES: Turn–On and Turn–Off Time NOTES: Base Currents = 0.5 mA. Figure 2. O10–2/3 LESHAN RADIO COMPANY, LTD. MMBT3640LT1 200 –1.4 V CE = –1.0 V h FE, DC CURRENT GAIN T J = 25°C –1.2 V, VOLTAGE (VOLTS) 100 70 50 T J = 125°C 25°C –55°C –1.0 –0.8 V BE(sat) @ I C /I B = 10 V BE(on) @ V CE = –1.0 V –0.6 –0.4 –0.2 30 20 V CE(sat) @ I C /I B = 10 10 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 3. DC Current Gain θ V , TEMPERATURE COEFFICIENT (mV/ °C) Figure 4. “On” Voltages V CE, COLLECTOR– EMITTER VOLTAGE (VOLTS) –1.0 +0.5 T J = 25°C –0.8 *APPLIES FOR I C /I B