MMBT3904LT1G

LMBT3904LT1G S-LMBT3904LT1G General Purpose Transistors NPN Silicon 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT3904LT1G 1AM 3000/Tape&Reel LMBT3904LT3G 1AM 10000/Tape&Reel 3 COLLECTOR 1 BASE 2 EMITTER 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Collector–Emitter Voltage Parameter VCEO 40 Collector–Base Voltage VCBO 60 Emitter–Base Voltage VEBO 6 V V V IC 200 mA Symbol Limits Unit Collector Current — Continuous 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, PD FR−5 Board (Note 1) @ TA = 25ºC 225 mW Derate above 25ºC 1.8 mW/ºC 556 ºC/W Thermal Resistance, RΘJA Junction–to–Ambient(Note 1) Junction and Storage temperature TJ,Tstg −55∼+150 ºC 1. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.B Mar 2016 1/5 LMBT3904LT1G, S-LMBT3904LT1G General Purpose Transistors NPN Silicon 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Symbol Collector–Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) Collector–Base Breakdown Voltage (IC = 10 μA, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 μA, IC = 0) Collector Cutoff Current ( VCE = 30 V, VEB = 3.0V) VBR(CEO) VBR(CBO) VBR(EBO) ICEX Base Cutoff Current IBL (VCE = 30 Vdc, VEB = 3.0Vdc) Min. Typ. Max. 40 - - Unit V V 60 - V 6 - nA - - 50 nA - - 50 40 - - ON CHARACTERISTICS (Note 2.) HFE DC Current Gain (IC = 0.1 mA, VCE = 1.0 V) (IC = 1.0 mA, VCE = 1.0 V) 70 - - (IC = 10 mA, VCE = 1.0 V) 100 - 300 (IC = 50 mA, VCE = 1.0 V) 60 - - 30 - - (IC = 10 mA, IB = 1.0 mA) - - 0.2 (IC = 50 mA, IB = 5.0 mA) - - 0.3 (IC = 100 mA, VCE = 1.0 V) Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage VCE(sat) V VBE(sat) V (IC = 10 mA, IB = 1.0 mA) - - 0.85 (IC = 50 mA, IB = 5.0 mA) - - 0.95 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product fT (IC = 10mA, VCE= 20V, f = 100MHz) Output Capacitance (VCB = 5.0 V, IE = 0, f = 1.0 MHz) Cobo Input Capacitance Cibo (VEB = 0.5 V, IC = 0, f = 1.0 MHz) MHz 300 - pF - - 4 pF - - 8 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 V,VBE=-0.5V, IC = 10mA, IB1 = 1.0 mA) td - - 35 tr - - 35 (VCC = 3.0 V, IC = 10 mA,IB1 = IB2 = 1.0 mA) ts - - 200 tf - - 50 ns 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.B Mar 2016 2/5 LMBT3904LT1G, S-LMBT3904LT1G General Purpose Transistors NPN Silicon 6.ELECTRICAL CHARACTERISTICS CURVES 400 10 150℃ HFE DC Current Gain C,Capacitance(pF) Cibo Cobo 300 25℃ 200 -55℃ 100 1 0.01 0.1 1 10 VR.Verse Voltage(V) 0 100 0.1 1.0 10.0 100.0 IC,Collector Current (mA) Capacitance DC Current Gain 2.5 1.4 VBE(sat),Base Emitter Saturation Voltage(V) VCE(sat), Collector-emitter Saturation(V) IC/IB=10 2.0 150℃ 1.5 1.0 25℃ 0.5 -55℃ 0.0 0.001 0.01 0.1 IC, Collector Current(A) IC/IB=10 1.2 1 -55℃ 0.8 25℃ 0.6 150℃ 0.4 0.2 1 0.001 0.01 0.1 IC, Collector Current(A) 1 VBE(sat) vs. IC VCE(sat) vs. IC Leshan Radio Company, LTD. 0 0.0001 Rev.B Mar 2016 3/5 LMBT3904LT1G, S-LMBT3904LT1G General Purpose Transistors NPN Silicon 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 1 1.4 1.2 VCE, Collecter Emitter Voltage(V) VBE(on), Base-emitter Voltage(V) VCE=1V 1 0.8 -55℃ 25℃ 0.6 0.4 150℃ 0.8 IC=30mA 0.6 IC=10mA IC=100mA 0.4 0.2 0.2 IC=1mA 0 0.0001 0.001 0.01 0.1 IC, Colletor Current(A) 0 0.001 1 0.01 0.1 1 IB, Base Current(mA) 10 Collector Saturation Region VBE(on) vs. IC 600 500 Rthja (K/W) 400 300 200 100 0 6.0E-06 6.0E-04 6.0E-02 Time (s) 6.0E+00 6.0E+02 Rthja Leshan Radio Company, LTD. Rev.B Mar 2016 4/5 LMBT3904LT1G, S-LMBT3904LT1G General Purpose Transistors NPN Silicon 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.B Mar 2016 5/5