MMBT404ALT1

LESHAN RADIO COMPANY, LTD. Chopper Transistor PNP Silicon 3 COLLECTOR 3 1 BASE MMBT404ALT1 1 2 EMITTER 2 CASE 318–08, STYLE 6 SOT– 23 (TO–236AB) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO IC Value – 35 – 40 – 25 – 150 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,(1) T A =25 °C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R θJA PD Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C R θJA T J , T stg DEVICE MARKING MMBT404ALT1 = 2N ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –10 mAdc, I B = 0) Collector– Emitter Breakdown Voltage (I C = –10 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –10 µAdc, I C = 0) Collector Cutoff Current (V CE = –10Vdc, I E = 0) Emitter Cutoff Current (V EB= –10Vdc, I C = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V V V (BR)CEO – 35 – 40 – 25 — — — — — — — — — — –100 –100 Vdc Vdc Vdc nAdc nAdc (BR)CBO (BR)EBO I CBO I EBO O1–1/2 LESHAN RADIO COMPANY, LTD. MMBT404ALT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I C = –12 mAdc, V CE = – 0.15 Vdc) Collector–Emitter Saturation Voltage (I C = –12mAdc, I B = – 0.4 mAdc) (I C = – 24mAdc, I B = – 1.0 mAdc) Base–Emitter Saturation Voltage (I C = –12mAdc, I B = – 0.4 mAdc) (I C = –24mAdc, I B = – 1.0 mAdc) hFE VCE(sat) –– –– V BE(sat) 100 –– 400 –– Vdc –– –– –– –– – 0.15 – 0.20 Vdc – 0.85 – 1.00 –– –– SMALL–SIGNAL CHARACTERISTICS Output Capacitance (V CB= – 6.0 Vdc, I E = 0, f = 1.0 MHz) C obo –– –– 20 pF SWITCHING CHARACTERISTICS Delay Time(VCC = –10Vdc, IC = –10 mVdc) (Figure 1) Rise Time ( I B1 = –1.0 mAdc, I BE(off) = –14Vdc) Storage Time (V CC = –10 Vdc, I C = –10 mAdc) Fall Time (I B1 = I B2 = –1.0 mAdc)(Figure 1) td tr ts tf — — — — 43 180 675 160 — — — — ns ns ns ns V BB R BB 1.0 k 0.1 µF V in 10 k 51 RB V CC = –10 V 1.0 k TO SCOPE t on , t d , t r t off , t s and t f V in (Volts) –12 +20.6 V BB (Volts) +1.4 –11.6 Voltages and resistor values shown are for I C = 10 mA, I C /I B = 10 and I B1 = I B2 Figure 1. Switching Time Test Circuit O1–2/2