MMBT5088LT1

LESHAN RADIO COMPANY, LTD. Low Noise Transistors NPN Silicon COLLECTOR 3 MMBT5088LT1 MMBT5089LT1 3 1 BASE 2 EMITTER M AXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO IC 5088LT 30 35 4.5 50 15089LT1 25 30 Unit Vdc Vdc Vdc mAdc 1 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) T HERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (1) T A =25 °C Derate above 25 °C Thermal Resistance, Junction to Ambient Symbol PD Max 225 1.8 556 300 2.4 R θJA T J , T stg 417 –55 to + 150 Unit mW mW/ °C °C/W mW mW/ °C °C/W °C R θJA PD Total Device Dissipation Alumina Substrate,(2) TA=25°C Derate above 25°C Thermal Resistance,Junction to Ambient Junction and Storage Temperature D EVICE MARKING MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R E LECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol V (BR)CEO MMBT5088 MMBT5089 V(BR)CBO MMBT5088 MMBT5089 I CBO MMBT5088 MMBT5089 — — 50 50 35 30 — — nAdc 30 25 — — Vdc Min Max Unit Vdc O FF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = 100 µAdc, I E = 0) Collector Cutoff Current (V CB = 20 Vdc, I E = 0 ) (V CB = 15 Vdc, I E = 0 ) Emitter Cutoff Current (VEB(off)= 3.0Vdc, I C = 0) MMBT5088 I EBO — — nAdc 50 100 (VEB(off) = 4.5Vdc, I C = 0) MMBT5089 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M18–1/4 LESHAN RADIO COMPANY, LTD. MMBT5088LT1 PNP MMBT5089LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE MMBT5088 MMBT5089 MMBT5088 MMBT5089 MMBT5088 MMBT5089 VCE(sat) — VBE(sat) — f 0.8 MHz 50 C cb — C eb — h fe MMBT5088 MMBT5089 NF MMBT5088 MMBT5089 — — 3.0 2.0 350 450 1400 1800 dB 10 — 4.0 pF — pF 0.5 Vdc 300 400 350 450 300 400 900 1200 — — — — Vdc Min Max Unit — ON CHARACTERISTICS DC Current Gain (IC=100µAdc,VCE=5.0Vdc) (IC=1.0mAdc,V CE=5.0Vdc) (IC = 10mAdc, VCE=5.0Vdc) Collector–Emitter Saturation Voltage (IC=10mAdc,IB=1.0mAdc) Base–Emitter Saturation Voltage (IC =10mAdc,IB=1.0mAdc) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC= 500 µAdc,VCE=5.0Vdc,f=20MHz) Collector–Base Capacitance (VCB=5.0Vdc,IE=0,f=1.0MHz emitter guarded) Emitter–Base Capacitance (VEB=0.5Vdc,IC=0,f=1.0MHz collector guarded) Small Signal Current Gain (IC=1.0mAdc,VCE=5.0Vdc,f=1.0kHz) Noise Figure (IC=100µAdc,VCE=5.0Vdc, RS=10κΩ,f=1.0kHz) T RS in ~ en IDEAL TRANSISTOR Figure 1.Transistor Noise Model M18–2/4 LESHAN RADIO COMPANY, LTD. MMBT5088LT1 MMBT5089LT1 NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25°C) NOISE VOLTAGE 30 30 BANDWIDTH=1.0Hz e n , NOISE VOLTAGE (nV) BANDWIDTH=1.0Hz I C = 1 0 mA 3.0mA 10 R S~ 0 ~ e n , NOISE VOLTAGE (nV) 20 20 R S~ 0 ~ f = 10Hz 10 7.0 100Hz 10kHz 1.0mA 7.0 5.0 5.0 1.0kHz 300 µ A 3.0 10 20 50 100 200 5001.0k 2.0k 5.0k 10k 20k 50k100k 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 100kHz 2.0 5.0 10 f, FREQUENCY (Hz) I C , COLLECTOR CURRENT (mA) Figure 2. Effects of Frequency 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 20 Figure 3. Effects of Collector Current BANDWIDTH=1.0Hz I n , NOISE CURRENT (pA) NF, NOISE FIGURE (dB) I C=10mA 3.0mA 1.0mA 300 µ A 100 µ A 10 µ A R S~ 0 ~ 10 20 50 100 200 5001.0k 16 BANDWIDTH=10 Hz to15.7 kHz 12 I C = 1.0 mA 8.0 500 µ A 100 µ A 10 µ A 4.0 30 µ A 2.0k 5.0k 10k 20k 50k100k 0 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) R S , SOURCE RESISTANCE (OHMS) Figure 4. Noise Current Figure 5. Wideband Noise Figure 100 Hz NOISE DATA V T , TOTAL NOISE VOLTAGE (nV) 300 200 20 BANDWIDTH=1.0Hz 100 µ A 3.0mA 1.0mA 300 µ A I C = 10mA 100 70 50 30 20 NF, NOISE FIGURE (dB) 16 I C = 1 0mA 3.0mA 1.0mA 12 300 µ A 8.0 30 µ A 10 µ A 10 7.0 5.0 3.0 10 20 50 100 200 5001.0k 100 µ A 4.0 30 µ A BANDWIDTH=1.0Hz 10 µ A 0 2.0k 5.0k 10k 20k 50k100k 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k R S , SOURCE RESISTANCE (OHMS) R S , SOURCE RESISTANCE (OHMS) Figure 6. Total Noise Voltage Figure 7. Noise Figure M18–3/4 LESHAN RADIO COMPANY, LTD. MMBT5088LT1 MMBT5089LT1 h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 V 2.0 CE = 5.0 V T A=125°C 25°C 1.0 –55°C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I C , COLLECTOR CURRENT (mA) Figure 8. DC Current Gain R θVBE , BASE– EMITTER TEMPERATURE COEFFICIENT (mV/ °C) 1.0 –0.4 T J = 25°C V, VOLTAGE (VOLTS) 0.8 –0.8 0.6 V BE @V CE = 5.0V –1.2 0.4 –1.6 T J=25°C to 125°C 0.2 –2.0 –55°C to25°C –0.4 0.01 0.02 0.05 V CE(sat) @ I C /I B = 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 9. “On” Voltages Figure 10. Temperature Coefficients 0.6 T J = 2 5°C C ob C eb C cb C ib f T , CURRENT– GAIN — BANDWIDTH 0.8 500 C, CAPACITANCE (pF) 300 PRODUCT (MHz) 0.4 0.3 200 0.2 100 70 50 1.0 V CE = 5.0 V 1.0 0.8 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 T J = 2 5°C 2.0 5.0 10 20 50 100 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current–Gain — Bandwidth Product M18–4/4