MMBT5401LT1

LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon MMBT5401LT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT– 23 (TO–236AB) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO IC Value – 150 – 160 – 5.0 – 500 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (1) T A =25 °C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 R θJA Unit mW mW/°C °C/W mW mW/°C °C/W °C 556 300 2.4 417 –55to+150 PD R θJA T J , Tstg DEVICE MARKING MMBT5401LT1=2L ELECTRICAL CHARACTERISTICS (T A = 25° C unless otherwise noted) Characteristic Symbol V (BR)CEO – 150 V (BR)CBO – 160 V(BR)EBO -5.0 I CES — — – 50 – 50 nAdc µ Adc — — Vdc — Vdc Min Ma x Unit Vdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –100 µAdc, I E = 0) Emitter-BAse Breakdown Voltage (I E= –10µAdc,I C=0) Collector Cutoff Current (V CB = –120 Vdc, IE= 0) (V CB = –120 Vdc, IE= 0, T A=100 °C) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M19–1/4 LESHAN RADIO COMPANY, LTD. MMBT5401LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE 50 60 50 VCE(sat) –– –– VBE(sat) –– –– f – 1.0 – 1.0 MHz 100 C obo –– h fe 40 NF –– 8.0 200 dB 6.0 — 300 pF – 0.2 – 0.5 Vdc –– 240 –– Vdc Min Max Unit –– ON CHARACTERISTICS (2) DC Current Gain (IC = –1.0mAdc, V CE = –5.0 Vdc) (IC = –10 mAdc, V CE = –5.0 Vdc) (IC = –50 mAdc, V CE = –5.0 Vdc) Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, I B = –5.0 mAdc) Base–Emitter Saturation Voltage (IC = –10 mAdc, I B = –1.0 mAdc) (IC = –50 mAdc, I B = –5.0 mAdc) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –10 mAdc, V CE= –10 Vdc, f = 100 MHz) Output Capacitance (VCB= –10 Vdc, I E = 0, f = 1.0 MHz) Small–Signal Current Gain (IC= –1.0mAdc, VCE = –10Vdc, f = 1.0 kHz) Noise Figure (IC = –200 µAdc, VCE= –5.0 Vdc,Rs=10Ω, f = 1.0 kHz) T M19–2/4 LESHAN RADIO COMPANY, LTD. MMBT5401LT1 200 150 T J=125°C h FE, CURRENT GAIN 100 25°C 70 50 –55°C 30 20 0.1 V V 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 CE CE = – 1.0 V = – 5.0 V 30 50 100 20 I C , COLLECTOR CURRENT (mA) Figure 1. DC Current Gain V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 I C = 1.0mA 10mA 30 mA 100 mA 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 I B , BASE CURRENT (mA) Figure 2. Collector Saturation Region 10 3 I C , COLLECTOR CURRENT (µA) V 10 2 CE = 30 V I C= I CES 10 1 T J = 1 25°C 10 0 75°C 10 -1 10 -2 REVERSE 25°C FORWARD 10 -3 - 0.3 - 0.2 - 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 V BE , BASE–EMITTER VOLTAGE (VOLTS) Figure 3. Collector Cut–Off Region M19–3/4 LESHAN RADIO COMPANY, LTD. MMBT5401LT1 θ V , TEMPERATURE COEFFICIENT (mV/° C) 2.5 2.0 1.5 1.0 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 1.0 0.9 T J = 25°C T J = – 55°C to 135°C V, VOLTAGE (VOLTS) 0.8 0.7 V 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 BE(sat) @ I C / I B =10 θ VC for V CE(sat) V CE(sat) @ I C /I B = 10 θ VB for V BE(sat) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 4. “On” Voltages Figure 5. Temperature Coefficients V 10.2V V in BB V +8.8 V CC 100 –30 V C 70 50 T J = 25°C C, CAPACITANCE (pF) 100 0.25 µ F 10 µ s INPUT PULSE R 3.0 k R 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 V B o ut C i bo 5.1 k 100 1N914 t r , t f < 10 ns DUTY CYCLE = 1.0% V in C o bo Values Shown are for I C @ 1 0 mA Figure 6. Switching Time Test Circuit V R , REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances 1000 700 500 300 100 I C /I B =10 T J= 25°C t r @V CC = 120V = 30V 70 50 30 20 I C / I B= 10 T J= 25°C t f@ V CC t f @V CC= 120V = 30V = 120V t r @V CC t, TIME (ns) t, TIME (ns) 200 100 70 50 30 20 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 10 7.0 5.0 3.0 t s @V CC t d @ V BE(off)= 1.0V V CC = 120V 2.0 1.0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 8. Turn–On Time Figure 9. Turn–Off Time M19–4/4