MMBT5550LT1

LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon 1 BASE 3 COLLECTOR MMBT5550LT1 MMBT5551LT1 3 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO 2 EMITTER Value 140 160 6.0 600 Unit Vdc Vdc Vdc mAdc 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ , Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT5550LT1 = M1F, MMBT5551LT1 = G1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C = 1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = 100 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector Cutoff Current ( V CB = 100Vdc, I E = 0) ( V CB = 120Vdc, I E = 0) ( V CB = 100Vdc, I E = 0, T A=100 °C) ( V CB = 120Vdc, I E = 0, T A=100 °C) Emitter Cutoff Current ( V BE = 4.0Vdc, I C= 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. I CBO MMBT5550 MMBT5551 MMBT5550 MMBT5551 I EBO — — — — — 100 50 100 50 50 nAdc µAdc nAdc MMBT5550 MMBT5551 V (BR)EBO V (BR)CEO 140 160 V (BR)CBO 160 180 6.0 — — — — Vdc MMBT5550 MMBT5551 Vdc Vdc — M20–1/4 LESHAN RADIO COMPANY, LTD. MMBT5550LT1 MMBT5551LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 VCE(sat) Both Types MMBT5550 MMBT5551 V Both Types MMBT5550 MMBT5551 BE(sat) Min Max Unit –– ON CHARACTERISTICS DC Current Gain (I C = 1.0 mAdc, V CE = 5.0 Vdc) (I C = 10 mAdc, V CE = 5.0 Vdc) (I C = 50 mAdc, V CE = 5.0Vdc) Collector–Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50 mAdc, I B = 5.0 mAdc ) Base–Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50 mAdc, I B = 5.0 mAdc) 60 80 60 80 20 30 — — — — — — — — 250 250 — — Vdc 0.15 0.25 0.20 Vdc 1.0 1.2 1.0 M20–2/4 LESHAN RADIO COMPANY, LTD. MMBT5550LT1 MMBT5551LT1 h FE, DC CURRENT GAIN (NORMALIZED) 500 300 200 T J = +125°C +25°C V CE = 1.0 V V CE = 5.0 V 100 –55°C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 T J = 25°C 0.8 I C = 1.0 mA 0.6 10 mA 30 mA 100 mA 0.4 0.2 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 I B , BASE CURRENT (mA) Figure 16. Collector Saturation Region 10 1 1.0 V CE = 30 V 10 0 T J = 25°C 0.8 I C, COLLECTOR CURRENT (µA) 10 –1 T J = 125°C I C = I CES 75°C REVERSE 25°C FORWARD V, VOLTAGE (VOLTS) V BE(sat) @ I C /I B = 10 0.6 10 –2 0.4 10 –3 10 –4 0.2 V CE(sat) @ I C /I B = 10 10 –5 0 –0.2 –0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 –0.4 –0.3 V BE , BASE–EMITTER VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Collector Cut–Off Region Figure 4. “On” Voltages M20–3/4 LESHAN RADIO COMPANY, LTD. MMBT5550LT1 , TEMPERATURE COEFFICIENT (mV/°C) MMBT5551LT1 2.5 2 1.5 1.0 0.5 0 –0.5 –1.0 –1.5 –2.0 –2.5 0.1 t r , t f