MMBT6428LT1

LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon 3 COLLECTOR MMBT6428LT1 MMBT6429LT1 3 1 BASE 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO Value 6428LT1 6429LT1 Unit 50 60 6.0 200 45 55 Vdc Vdc Vdc mAdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ , Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT6428LT1 = 1KM, MMBT6429LT1 = 1L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C = 1.0 mAdc, I B = 0) (I C = 1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = 0.1mAdc, I E = 0) (I C = 0.1mAdc, I E = 0) Collector Cutoff Current ( V CE = 30Vdc, ) Collector Cutoff Current ( V CB = 30Vdc, I E = 0 ) Emitter Cutoff Current ( V EB = 5.0Vdc, I C= 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. I CBO — I EBO — 0.01 0.01 µAdc MMBT6428 MMBT6429 V (BR)CBO MMBT6428 MMBT6429 I CBO — 0.1 µAdc 60 55 — — µAdc V (BR)CEO 50 45 — — Vdc Vdc M22–1/4 LESHAN RADIO COMPANY, LTD. MMBT6428LT1 MMBT6429LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE MMBT6428 MMBT6429 MMBT6428 MMBT6429 MMBT6428 MMBT6429 MMBT6428 MMBT6429 VCE(sat) –– –– V BE(on) Min Max Unit –– ON CHARACTERISTICS DC Current Gain (I C = 0.01 mAdc, V CE = 5.0 Vdc) (I C = 0.1 mAdc, V CE = 5.0Vdc) (I C = 1.0 mAdc, V CE = 5.0Vdc) (I C = 10 mAdc, V CE = 5.0Vdc) Collector–Emitter Saturation Voltage (I C = 10 mAdc, I B = 0.5 mAdc) (I C = 100 mAdc, I B = 0.5 mAdc) Base–Emitter On Voltage (I C = 1.0 mAdc, V CE = 5.0mAdc) 250 500 250 500 250 500 250 500 — — 650 1250 — — — — Vdc 0.2 0.6 0.66 Vdc 0.56 SMALL–SIGNAL CHARACTERISTICS Current Gain–Bandwidth Product (V CE = 5.0 Vdc, I C = 1.0mAdc, f = 100 MHz) Output Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB= 0.5 Vdc, I C = 0 , f = 1.0 MHz) fT C obo C ibo 100 –– –– 700 3.0 8.0 MHz pF pF RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model M22–2/4 LESHAN RADIO COMPANY, LTD. MMBT6428LT1 MMBT6429LT1 NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25°C) NOISE VOLTAGE 30 30 BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz e n , NOISE VOLTAGE (nV) I C = 10 mA R S~0 ~ e n , NOISE VOLTAGE (nV) 20 20 RS~ 0 ~ f = 10 Hz 10 10 3.0 mA 1.0 mA 100 Hz 7.0 5.0 7.0 10 kHz 5.0 1.0 kHz 300 µA 3.0 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 100 kHz 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 f, FREQUENCY (Hz) I C , COLLECTOR CURRENT (mA) Figure 2. Effects of Frequency 10 7.0 5.0 2.0 Figure 3. Effects of Collector Current BANDWIDTH = 1.0 Hz NF, NOISE FIGURE (dB) I C = 10 mA 3.0 mA 1.0 mA 300 µA 100 µA 10 µA 50 100 200 500 1k 2k I n , NOISE CURRENT (pA) 16 BANDWIDTH = 10 Hz to 15.7 kHz 12 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 8.0 500 µA 100 µA I C = 1.0 mA 4.0 10 µA 30 µA 5k 10k 20k 50k 100k 0 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS~ 0 ~ 10 20 f, FREQUENCY (Hz) R S , SOURCE RESISTANCE (Ω) Figure 4. Noise Current 100 Hz NOISE DATA 300 20 Figure 5. Wideband Noise Figure V T , TOTAL NOISE VOLTAGE (nV) 200 BANDWIDTH = 1.0 Hz 3.0 mA 1.0 mA 300 µA I C = 10 mA 100 70 50 30 20 10 7.0 5.0 3.0 10 20 50 100 200 500 NF, NOISE FIGURE (dB) 16 I C = 10 mA 3.0 mA 1.0 mA 12 100 µA 30 µA 10 µA 300 µA 8.0 100 µA 4.0 30 µA BANDWIDTH = 1.0 Hz 10 µA 0 1k 2k 5k 10k 20k 50k 100k 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k R S , SOURCE RESISTANCE (Ω) R S , SOURCE RESISTANCE (Ω) Figure 6. Total Noise Voltage Figure 7. Noise Figure M22–3/4 LESHAN RADIO COMPANY, LTD. MMBT6428LT1 MMBT6429LT1 h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 V CE = 5.0 V 2.0 T A = 125°C 25°C 1.0 –55°C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I C , COLLECTOR CURRENT (mA) Figure 8. DC Current Gain R θVBE , BASE– EMITTER TEMPERATURE COEFFICIENT (mV/ °C) 1.0 –0.4 T J = 25°C 0.8 –0.8 V, VOLTAGE (VOLTS) 0.6 V BE @ V CE = 5.0 V –1.2 0.4 –1.6 T J = 25°C to 125°C 0.2 –2.0 –55°C to 25°C –2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 V CE(sat) @ I C /I B = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 9. “On” Voltages 8.0 6.0 Figure 10. Temperature Coefficients f T , CURRENT– GAIN — BANDWIDTH PRODUCT (MHz) 50 T J = 25°C C ob C eb C cb C ib 300 C, CAPACITANCE (pF) 4.0 3.0 200 2.0 100 V CE = 5.0 V 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 0.8 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 T J = 25°C V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current–Gain — Bandwidth Product M22–4/4