MMBT6472LT1

LESHAN RADIO COMPANY, LTD. Darlington Transistors NPN Silicon 3 COLLECTOR 1 BASE MMBT6427LT1 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO Value 40 40 12 500 Unit Vdc Vdc Vdc mAdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C RθJA PD RθJA TJ , Tstg DEVICE MARKING MMBT6427LT1 = 1V ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C = 10 mAdc, V BE = 0) Collector–Base Breakdown Voltage (I C = 100 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector Cutoff Current ( V CE = 25Vdc, I B = 0) Collector Cutoff Current ( V CB = 30Vdc, I E = 0) Emitter Cutoff Current ( V EB = 10Vdc, I C= 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CBO V (BR)EBO 40 40 12 — — — — — — 1.0 50 50 Vdc Vdc Vdc µAdc nAdc nAdc I CES I CBO I EBO M21–1/5 LESHAN RADIO COMPANY, LTD. MMBT6427LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE 10,000 20,000 14,000 VCE(sat)(3) –– –– V BE(sat) V BE(on) Min Max Unit –– ON CHARACTERISTICS DC Current Gain (I C = 10 mAdc, V CE = 5.0 Vdc) (I C = 100 mAdc, V CE = 5.0Vdc) (I C = 500 mAdc, V CE = 5.0Vdc) Collector–Emitter Saturation Voltage (I C = 50 mAdc, I B = 0.5 mAdc) (I C = 500 mAdc, I B = 0.5 mAdc) Base–Emitter Saturation Voltage (I C = 500 mAdc, I B = 0.5 mAdc) Base–Emitter On Voltage (I C = 50 mAdc, V CE = 5.0Vdc) 100,000 200,000 140,000 Vdc 1.2 1.5 2.0 1.75 Vdc Vdc –– — SMALL–SIGNAL CHARACTERISTICS Output Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) C obo –– –– 1.3 — 7.0 15 — 10 pF pF Vdc dB Input Capacitance C ibo (V EB=0.5 Vdc, I C = 0 , f = 1.0 MHz) Current Gain–High Frequency |h fe | (V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz) Noise Finure NF (V CE=5.0 Vdc, I C = 1.0 mAdc , R S =100 kΩ, f = 1.0 kHz ) 3. Pulse Tent: Pulse Width = 300µs, Duty Cycle = 2.0% RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model M21–2/5 LESHAN RADIO COMPANY, LTD. MMBT6427LT1 NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25°C) 500 2.0 BANDWIDTH = 1.0 Hz ~ R S~ 0 200 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 i n , NOISE CURRENT (pA) e n , VOLTAGE (nV) 100 I C = 1.0 mA 10 µA 50 100 µA 20 0.1 0.07 0.05 0.03 0.02 100 µA 10 µA I C = 1.0 mA 10 5.0 10 20 50 100 200 500 1k 2k 5k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1k 2k 5k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 2. Noise Voltage V T , TOTAL WIDEBAND NOISE VOLTAGE (nV) 200 14 Figure 3. Noise Current BANDWIDTH = 10 Hz TO 15.7 kHz 100 70 50 NF, NOISE FIGURE (dB) BANDWIDTH = 10 Hz TO 15.7 kHz I C = 10 µA 12 10 8.0 10 µA 100 µA 30 20 100 µA 6.0 4.0 2.0 0 I C = 1.0 mA 1.0 mA 10 1.0 2.0 5.0 10 20 50 100 200 500 1000 1.0 2.0 5.0 10 20 50 100 200 500 1000 R S , SOURCE RESISTANCE (kΩ) R S , SOURCE RESISTANCE (kΩ) Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure M21–3/5 LESHAN RADIO COMPANY, LTD. MMBT6427LT1 SMALL–SIGNAL CHARACTERISTICS 20 |h fe |, SMALL– SIGNAL CURRENT GAIN 4.0 V CE = 5.0 V 2.0 T J = 25°C 10 f = 100 MHz T J = 25°C C, CAPACITANCE (pF) 7.0 5.0 C ibo C obo 1.0 0.8 0.6 0.4 3.0 2.0 0.04 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 6. Capacitance 200 Figure 7. High Frequency Current Gain V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) 3.0 T J = 125°C 100 70 T J = 25°C 2.5 h FE , DC CURRENT GAIN 50 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 25°C I C = 10 mA 2.0 50 mA 250 mA 500 mA 1.5 –55°C V CE = 5.0 V 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) R θV , TEMPERATURE COEFFICIENTS (mV/°C) I B , BASE CURRENT (µA) Figure 8. DC Current Gain 1.6 Figure 9. Collector Saturation Region –1.0 T J = 25°C 1.4 *APPLIES FOR I C / I B < h FE /3.0 –2.0 25°C TO 125°C *R θVC FOR V CE(sat) –55°C TO 25°C V, VOLTAGE (VOLTS) V BE(sat) @ I C /I B = 1000 1.2 –3.0 V BE(on) @ V CE = 5.0 V 1.0 25°C TO 125°C –4.0 θ VB FOR V BE –5.0 0.8 V CE(sat) @ I C /I B = 1000 0.6 5.0 7.0 10 20 30 50 70 100 200 300 500 –55°C TO 25°C –6.0 5.0 7.0 10 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 10. “On” Voltages Figure 11. Temperature Coefficients M21–4/5 LESHAN RADIO COMPANY, LTD. MMBT6427LT1 1.0 0.7 D = 0.5 0.2 r (t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.05 SINGLE PULSE SINGLE PULSE Z θJC(t) = r(t) • R θJC T J(pk) – T C = P (pk) Z θJC(t) Z θJA(t) = r(t) • R θJA T J(pk) – T A = P (pk) Z θJA(t) 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k t, TIME (ms) Figure 12. Thermal Response FIGURE A t PP P PP t 1 1/f tP PEAK PULSE POWER = P P DUTY CYCLE =t 1 f = t1 Design Note: Use of Transient Thermal Resistance Data M21–5/5