MMBT6517LT1

LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon MMBT6517LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Base Current Collector Current — Continuous Symbol V CEO V CBO V EBO Value 350 350 5.0 250 500 Unit Vdc Vdc Vdc mAdc mAdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) IB IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C RθJA PD RθJA TJ , Tstg DEVICE MARKING MMBT6517LT1 = 1Z ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 1.0 mAdc ) Collector–Base Breakdown Voltage (I C = 100 µAdc ) Emitter–Base Breakdown Voltage (I E = 10 µAdc ) Collector Cutoff Current ( V CB = 250Vdc ) Emitter Cutoff Current ( V EB = 5.0Vdc ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CBO V (BR)EBO 350 350 6.0 — — — — — 50 50 Vdc Vdc Vdc nAdc nAdc I CBO I EBO M23–1/5 LESHAN RADIO COMPANY, LTD. MMBT6517LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE 20 30 30 20 15 VCE(sat) — — — — VBE(sat) — — — V BE(on) — 0.75 0.85 0.90 2.0 Vdc 0.30 0.35 0.50 1.0 Vdc — — 200 200 — Vdc Min Max Unit — ON CHARACTERISTICS DC Current Gain (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10mAdc, V CE = 10 Vdc) (I C = 30 mAdc, V CE = 10 Vdc) (I C = 50 mAdc, V CE = 10 Vdc) (I C = 100 mAdc, V CE = 10 Vdc) Collector–Emitter Saturation Voltage(3) (I C = 10mAdc, I B = 1.0mAdc) (I C = 20 mAdc, I B = 2.0 mAdc) (I C = 30 mAdc, I B = 3.0mAdc) (I C = 50 mAdc, I B = 5.0 mAdc) Base – Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc,) (I C = 20mAdc, I B = 2.0mAdc,) (I C = 30mAdc, I B = 3.0mAdc,) Base–Emitter On Voltage (I C = 100mAdc, V CE = 10Vdc) SMALL–SIGNAL CHARACTERISTICS Current Gain–Bandwidth Product fT (V CE = 20 Vdc, I C = 10mAdc, f = 20 MHz) Collector –Base Capacitance C cb (V CB = 20 Vdc, f = 1.0 MHz) Emitter –Base Capacitance C eb (V EB=0.5 Vdc, f = 1.0 MHz) 3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. 40 — — 200 6.0 80 MHz pF pF M23–2/5 LESHAN RADIO COMPANY, LTD. MMBT6517LT1 200 f T, CURRENT– GAIN — BANDWIDTH PRODUCT (MHz) 100 V CE = 10 V 100 T J = 125°C 70 50 h FE , DC CURRENT GAIN 25°C 70 50 –55°C 30 20 30 T J = 25°C V CE = 20 V f = 20 MHz 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. Current–Gain — Bandwidth Product 1.4 2.5 R θV , TEMPERATURE COEFFICIENTS (mV/°C) T J = 25°C 1.2 2.0 1.5 1.0 0.5 0 –0.5 –1.0 IC IB = 10 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 25°C to 125°C R θVC for V CE(sat) –55°C to 25°C V BE(sat) @ I C /I B = 10 V BE(on) @ V CE = 10 V –55°C to 125°C –1.5 –2.0 –2.5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 V CE(sat) @ I C /I B = 10 V CE(sat) @ I C /I B = 5.0 R θVC for V BE I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 3. “On” Voltages 100 70 50 Figure 4. Temperature Coefficients T J = 25°C C eb 30 C, CAPACITANCE (pF) 20 10 7.0 5.0 3.0 2.0 C cb 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 V R , REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance M23–3/5 LESHAN RADIO COMPANY, LTD. MMBT6517LT1 1.0k 700 500 300 200 10k V CE(off) = 100 V t d @ V BE(off) = 2.0 V I C /I B = 5.0 T J = 25°C 7.0k 5.0k 3.0k 2.0k ts tr t, TIME (ns) 100 70 50 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 t, TIME (ns) 1.0k 700 500 300 200 100 1.0 2.0 tf V CE(off) = 100 V I C /I B = 5.0 I B1 = I B2 T J = 25°C 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 6. Turn–On Time +V CC V CC ADJUSTED FOR V CE(off) = 100 V 2.2 k Figure 7. Turn–Off Time +10.8 V 50 Ω SAMPLING SCOPE 20 k 50 1.0 k –9.2 V 1/2MSD7000 PULSE WIDTH ~ 100 ms ~ t r , t f < 5.0 ns DUTY CYCLE