MMBT6520LT1

LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon MMBT6520LT1 3 COLLECTOR 1 BASE 1 2 EMITTER 2 3 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Base Current Collector Current — Continuous Symbol V CEO V CBO V EBO IB IC Value –350 –350 –5.0 –250 –500 Unit Vdc Vdc Vdc mA mAdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C RθJA PD RθJA TJ , Tstg DEVICE MARKING MMBT6520LT1 = 2Z ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –1.0 mA ) Collector–Base Breakdown Voltage(I E = –100 µA ) Emitter–Base Breakdown Voltage(I E = –10 µA) Collector Cutoff Current( V CB = –250V ) Emitter Cutoff Current( V EB = –4.0V ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CBO V (BR)EBO I CBO I EBO –350 –350 –5.0 — — — — — –50 –50 Vdc Vdc Vdc nA nA M24–1/5 LESHAN RADIO COMPANY, LTD. MMBT6520LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE 20 30 30 20 15 VCE(sat) — — — — VBE(sat) — — — V BE(on) Min Max Unit — ON CHARACTERISTICS DC Current Gain (I C = –1.0 mAdc, V CE = –10 Vdc) (I C = –10mAdc, V CE = –10 Vdc) (I C = –30 mAdc, V CE = –10 Vdc) (I C = –50 mAdc, V CE = –10 Vdc) (I C = –100 mAdc, V CE = –10 Vdc) Collector–Emitter Saturation Voltage (I C = –10mAdc, I B = –1.0mAdc) (I C = –20 mAdc, I B = –2.0 mAdc) (I C = –30 mAdc, I B = –3.0mAdc) (I C = –50 mAdc, I B = –5.0 mAdc) Base – Emitter Saturation Voltage (I C = –10mAdc, I B = –1.0mAdc,) (I C = –20mAdc, I B = –2.0mAdc,) (I C = –30mAdc, I B = –3.0mAdc,) Base–Emitter On Voltage (I C = –100mAdc, V CE = –10V ) — — 200 200 — Vdc –0.30 –0.35 –0.50 –1.0 Vdc –0.75 –0.85 –0.90 –2.0 Vdc — SMALL–SIGNAL CHARACTERISTICS Current Gain–Bandwidth Product (V CE = –20 V, I C = –10mA, f = 20 MHz) Collector –Base Capacitance (V CB = –20 V, f = 1.0 MHz) Emitter –Base Capacitance (V EB= –0.5 V, f = 1.0 MHz) fT C cb 40 — — 200 6.0 100 MHz pF pF C eb M24–2/5 LESHAN RADIO COMPANY, LTD. MMBT6520LT1 V CE = 10 V T J = 125°C f T , CURRENT– GAIN — BANDWIDTH PRODUCT (MHz) 200 100 h FE , DC CURRENT GAIN 100 70 50 25°C 70 50 –55°C 30 20 30 T J = 25°C V CE = 20 V f = 20 MHz 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. Current–Gain — Bandwidth Product R θV , TEMPERATURE COEFFICIENTS (mV/ °C) 1.4 2.5 2.0 1.5 1.0 0.5 0 T J = 25°C 1.2 IC IB = 10 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0 3.0 5.0 7.0 10 20 25°C to 125°C R θVC for V CE(sat) –55°C to 25°C V BE(sat) @ I C /I B = 10 V BE(on) @ V CE = 10 V –0.5 –1.0 –55°C to 125°C R θVBfor V BE –1.5 –2.0 –2.5 1.0 V CE(sat) @ I C /I B = 10 V CE(sat) @ I C /I B = 5.0 30 50 70 100 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 3. “On” Voltages Figure 4. Temperature Coefficients 1.0k 100 70 50 T J = 25°C C eb 700 500 300 200 V CE(off) = 100 V t d @ V BE(off) = 2.0 V I C /I B = 5.0 T J = 25°C C, CAPACITANCE (pF) 30 20 tr t, TIME (ns) 10 7.0 5.0 3.0 2.0 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 100 70 50 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 C cb V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 5. Capacitance Figure 6. Turn–On Time M24–3/5 LESHAN RADIO COMPANY, LTD. MMBT6520LT1 10k 7.0k 5.0k 3.0k 2.0k 1.0k 700 500 300 200 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 tS t, TIME (ns) tr V CE(off) = 100 V I C /I B = 5.0 I B1 = I B2 T J = 25°C I C , COLLECTOR CURRENT (mA) Figure 7. Turn–On Time +V CC V CC ADJUSTED FOR V CE(off) = 100 V 2.2 k 50 Ω SAMPLING SCOPE 20 k 1.0 k –9.2 V 1/2MSD7000 50 +10.8 V PULSE WIDTH ~ 100 ms ~ t r , t f